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    Wyświetlanie 1-9 z 9
    Tytuł:
    Electrical Properties of p-ZnTe/n-CdTe Photodiodes
    Autorzy:
    Chusnutdinow, S.
    Makhniy, V.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1409588.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    73.61.Ga
    85.60.Dw
    88.40.jm
    Opis:
    Current-voltage (I-V) and capacitance-voltage (C-V) characteristics of photovoltaic, thinfilm p-ZnTe/n-CdTe heterojunctions have been studied in the temperature range of 280-400 K. The p-n junctions were grown by MBE on (100) semi-insulating GaAs substrates. From the analysis of I-V and C-V curves the potential barrier height of the junctions and its temperature dependence are determined. The relatively large value of the temperature coefficient of the potential barrier height (2.5-3.0 × $10^{-3}$ eV/K) indicates a high density of defects at the p-ZnTe/n-CdTe interface. The presence of interface defects limits the efficiency of the solar energy conversion of these devices.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1077-1079
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ferroelectric Field Effect Transistor Based on Modulation Doped CdTe/CdMgTe Quantum Wells
    Autorzy:
    Kolkovsky, V.
    Wojciechowski, T.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811945.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.80.-e
    77.80.Fm
    85.50.Gk
    73.61.Ga
    Opis:
    In this work, we observed effects of changing the electron concentration and electron mobility upon the poling of the $Cd_{0.96}Zn_{0.04}Te$ ferroelectric gate deposited on the top of the CdTe-based modulation doped quantum well structure, which are confirmation of the existence of the electrostatic field originating from the ferroelectric material, which can be controlled by an external voltage. The analysis of the data obtained from the Hall effect measurements showed that the electron mobility and carrier concentration decreased by a factor of 2.5 and 1.5, respectively upon the negative poling of the gate with respect to the poled by the positive voltage. Moreover, the electrostatic field, depending on its directions, causes depletion of accumulation of electrons in the 2D channel, i.e., it is a source of the field effect.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1173-1178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Electron Traps in CdTe:In Films Grown by Molecular Beam Epitaxy
    Autorzy:
    Żakrzewski, A. K.
    Dobaczewski, L.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934051.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    N-type indium doped CdTe grown on n$\text{}^{+}$-GaAs by molecular beam epitaxy has been studied by the standard deep level transient spectroscopy and the isothermal Laplace-transform deep level transient spectroscopy. It was found that the Cd/Te flux ratio strongly influences the deep level transient spectroscopy results. The unusual temperature dependence of the electron emission rate in films grown at nearly stoichiometric conditions may point out that the observed defect is resonant with the conduction band.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 961-964
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Interface-Induced Disorder on Classical and Quantum Conductivity of CdTe:IN Epitaxial Layers
    Autorzy:
    Łusakowski, J.
    Karpierz, K.
    Grynberg, M.
    Karczewski, G.
    Wojtowicz, T.
    Contreras, S.
    Callen, O.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968369.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.Jt
    73.61.Ga
    Opis:
    An influence of disorder originated from the substratelayer interface on electrical properties of CdTe:In layers was investigated by means of the Hall effect and magnetoresistance measurements at low temperatures. An estimation of a scattering rate due to interface-induced disorder is given. Characteristic features of a magnetic field dependence of magnetoresistance are explained by an influence of quantum interference of scattered electron waves both in the hopping and the free electron conductivity regimes.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 911-914
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reduction of the Optical Losses in CdTe/ZnTe Thin-Film Solar Cells
    Autorzy:
    Chusnutdinow, S.
    Pietruszka, R.
    Zaleszczyk, W.
    Makhniy, V.
    Wiater, M.
    Kolkovsky, V.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1375701.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Hi
    73.61.Ga
    85.60.Dw
    88.40.jm
    Opis:
    We report on reduction of optical losses in n-CdTe/p-ZnTe thin-film solar cells grown by molecular beam epitaxy. The investigated thin-film devices were grown from elemental sources on monocrystalline, semi-insulating, (100)-oriented GaAs substrates. The optical losses have been reduced by a texturing of the device surface and by depositing of a ZnO antireflection coating. Current-voltage and spectral characteristics of the investigated p-ZnTe/n-CdTe solar cells depend significantly on the preparation of the surface of the ZnTe window. We describe a procedure of chemical etching of the ZnTe window leading to surface texturing. A ZnO layer of proper thickness deposited by low-temperature atomic layer deposition technique on the ZnTe surface forms an effective antireflection coating that leads to the reduction of optical losses. Due to reduction of the optical losses we observe increase of the short-circuit current, $J_{SC}$, by almost 60% and of the energy conversion efficiency by 44%.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1072-1075
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Indium Doping of CdTe Grown by Molecular Beam Epitaxy
    Autorzy:
    Karczewski, G.
    Zakrzewski, A.
    Kutrowski, M.
    Jaroszyński, J.
    Dobrowolski, W.
    Grodzicka, E.
    Janik, E.
    Wojtowicz, T.
    Kossut, J.
    Barcz, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1932089.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.Ln
    73.61.Ga
    Opis:
    We report on n-type indium doping of CdTe films grown by molecular beam epitaxy on (001) GaAs substrates. By adjusting the flux of In atoms we can precisely control the carrier concentration over three orders of magnitude - from 8 × 10$\text{}^{14}$ up to 1.3 × 10$\text{}^{18}$ cm$\text{}^{-3}$. In agreement with earlier reports we confirmed that Cd overpressure plays an important role in the doping process. The doping appears to be most effective for Cd/Te pressure ratio of 1.5. For this value of Cd/Te pressure ratio essentially 100% efficiency of doping is achieved at low In concentrations (< 10$\text{}^{18}$ cm$\text{}^{-3}$). At higher In concentrations acceptor impurities compensate shallow donors limiting the concentration of free carriers.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 241-244
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantum Hall Ferromagnet in Magnetically-Doped Quantum Wells
    Autorzy:
    Andrearczyk, T.
    Jaroszyński, J.
    Wróbel, J.
    Karczewski, G.
    Wojtowicz, T.
    Papis, E.
    Kamińska, E.
    Piotrowska, A.
    Popović, D.
    Dietl, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2036881.pdf
    Data publikacji:
    2003-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.43.Nq
    72.25.Dc
    73.61.Ga
    75.50.Pp
    Opis:
    The article reviews our recent studies on quantum Hall ferromagnetism in diluted magnetic semiconductors. We carried out magnetoresistance studies on modulation-doped, gated heterostructures of (Cd,Mn)Te/(Cd,Mg)Te:I. We put into evidence the formation of Ising quantum Hall ferromagnet with Curie temperature T$\text{}_{C}$ as high as 2 K. Quantum Hall ferromagnetism is manifested by anomalous magnetoresistance maxima. Moreover, magnitude of these spikes depends dramatically on the history of the sample, shows hysteresis when either magnetic field or gate voltage are swept, stretched-exponential time evolution characteristic of glassy systems, and strong Barkhausen noise. Our study suggests that these metastabilities stem from the slow dynamics of ferromagnetic domains.
    Źródło:
    Acta Physica Polonica A; 2003, 104, 2; 93-102
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetization Steps in Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te Observed in Coherent Transport
    Autorzy:
    Jaroszyński, J.
    Dietl, T.
    Wróbel, J.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Maude, D. K.
    van der Linden, P.
    Portal, J. C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968114.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.61.Ga
    73.20.Fz
    Opis:
    Magnetoconductance measurements on submicron wires of n$\text{}^{+}$-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te were carried out up to 27 T and down to 100 mK. The inverse correlation field of the universal conductance fluctuations is found to increase abruptly in the vicinity of the magnetization steps due to Mn pairs in CdMnTe. No such effect is observed in similar wires of CdTe. These findings support a recent model, according to which the correlation field of the universal conductance fluctuations in magnetic systems is inversely proportional to the magnetic susceptibility of the localized spins.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 797-800
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Conductance Fluctuations in Quantum Wires of n-CdTe and n-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te
    Autorzy:
    Jaroszyński, J.
    Wróbel, J.
    Sawicki, M.
    Skośkiewicz, T.
    Karczewski, G.
    Wojtowicz, T.
    Kossut, J.
    Dietl, T.
    Kamińska, E.
    Papis, E.
    Barcz, A.
    Piotrowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934061.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Rn
    73.61.Ga
    73.20.Fz
    Opis:
    We present millikelvin studies of magnetoconductance in submicron wires of In-doped n$\text{}^{+}$-CdTe and n$\text{}^{+}$-Cd$\text{}_{0.99}$Mn$\text{}_{0.01}$Te epilayers. Weak-field magnetoresistance which arises from quantum localization as well as universal conductance fluctuations have been observed. The exchange coupling to magnetic impurities is shown to decrease the correlation field of the fluctuations. This novel effect is interpreted by invoking a new driving mechanism of the magnetoconductance fluctuations - the redistribution of the electrons between energy levels of the system, induced by the giant s-d spin-splitting of the electronic states.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 1000-1004
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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