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Wyświetlanie 1-15 z 20
Tytuł:
Studies of Transport Properties of Single Layer Devices Based on the Polyazomethine Thin Films
Autorzy:
Weszka, J.
Domański, M.
Jurusik, J.
Hajduk, B.
Chwastek, M.
Bednarski, H.
Powiązania:
https://bibliotekanauki.pl/articles/1492961.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
This work reports results of studies on transport properties of single-layer devices based on polyazomethine thin films with different metal electrodes. Recorded I-V characteristics of Au-PPI-Au and Au-PPI-Al structures were analyzed in detail. It appears that I-V characteristics of Au-PPI-Au structures are consistent with the Mott-Gurney law with the mobility value of $2× 10^{-6} cm^2$/(V s). Relatively low current in Au-PPI-Al devices is attributed to high value of the Schottky barrier and/or due to low density of longer conjugated segments in polyazomethine thin films.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 936-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gain Studies on Photoconductors Made on Partly Compensated GaAs
Autorzy:
Riesz, F.
Powiązania:
https://bibliotekanauki.pl/articles/1872925.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Pz
85.60.Gz
Opis:
The gain behavior of GaAs photoconductors realized on the partly compensated channel of a MESFET is studied. The gain versus light power dependence hints at the domination of the bimolecular recombination and the trap-mediated gain, and only a minor role of the surface photovoltaic effect. The possible correlation between dark current and gain mechanism is pointed out.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 373-376
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of Zn:Se Ratio on the Properties of Sprayed ZnSe Thin Films
Autorzy:
Öztaş, M.
Bedir, M.
Bakkaloğlu, Ö.
Ormancı, R.
Powiązania:
https://bibliotekanauki.pl/articles/2042122.pdf
Data publikacji:
2005-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Hf
73.50.Pz
Opis:
The effect of Zn:Se ratio on the photoconducting properties of ZnSe thin films has been studied. The ZnSe thin films have been deposited onto glass substrates by the spray pyrolysis method, the substrate temperature kept at 430ºC using mixed aqueous solutions of ZnCl$\text{}_{2}$ and SeO$\text{}_{2}$ with different Zn:Se ratios. Their electrical, structural, and photoconductivity properties have been studied. The values of optical bandgap have been determined from the absorption spectra.
Źródło:
Acta Physica Polonica A; 2005, 107, 3; 525-534
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline $Cu_2S$ Based Heterojunctions for Photodetector Application
Autorzy:
Soliman, H.
Farag, A.
Saadeldin, M.
Sawaby, K.
Powiązania:
https://bibliotekanauki.pl/articles/1400523.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
In this work, heterojunctions of $Cu_2S//p-Si$ were prepared by high vacuum thermal evaporation technique and examined as a photodetector structure. The dark current-voltage (I-V) characteristics of the heterojunctions measured at different temperatures ranging from 303 to 373 K were investigated. The predominant conduction mechanisms, series resistance, ideality factor and potential barrier height were determined. The downward curvature at sufficiently large voltages in the I-V characteristics is caused by the effect of series resistance $R_{s}$. The ideality factor obtained from I-V characteristics is larger than unity which can be attributed to the presence of a thin interfacial insulator layer between the metal and semiconductor. The photocurrent properties of the device under reverse bias using various illuminations were also explored for checking the validity of photodetector application of the studied device. The responsivity of light for the device under reverse bias confirms that the $Cu_2S//p-Si$ heterojunctions are valid for photodetector application. Moreover, these results suggest that the fabricated diode can be used for optical sensor applications. The capacitance-voltage characteristics of diode were also investigated at high frequency of 1 MHz.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1688-1693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stability of Diodes with Poly(3-hexylthiophene) and Polyazomethines Thin Organic Layer
Autorzy:
Bednarski, H.
Gąsiorowski, J.
Domański, M.
Hajduk, B.
Jurusik, J.
Jarząbek, B.
Weszka, J.
Powiązania:
https://bibliotekanauki.pl/articles/1409596.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexylthiophene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bisoctyloxy phenylenemethylidynenitrilo)-1,4-phenylenenitrilomethylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1083-1086
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Transient Photocurrent in Organic Semiconductors Incorporating the Annihilation of Excitons on Charge Carriers
Autorzy:
Głowienka, D.
Szmytkowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1033869.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.35.-y
73.50.-h
73.50.Pz
Opis:
The role of the annihilation of excitons on charge carriers has been theoretically investigated in organic semiconductors. We have developed the numerical drift-diffusion model by incorporation terms which describe the annihilation process. The transient photocurrent has been calculated for different injection barrier heights, exciton mobilities, and annihilation rate constants. We have demonstrated that the annihilation has a great influence on the range and the rising time of the photocurrent.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 397-400
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and electrical properties of electrodeposited single junction of cuprous (I) oxide-copper
Autorzy:
Rówiński, E.
Pławecki, M.
Powiązania:
https://bibliotekanauki.pl/articles/1075639.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
73.50.Pz
73.40.Sx
Opis:
Cuprous (I) oxide (Cu₂O)-based solar cells were fabricated with the use of the electrodeposition technique at nanometre-scale, and the structural, morphological and electrical properties were investigated. The Cu₂O layers were electrodeposited on crystalline and polycrystalline copper substrates. To complete the Cu₂O/Cu(100) and Cu₂O/Cu interfaces as the solar cells the top electrodes of silver paste were painted on the rear of Cu₂O. The microscopic analysis exhibits uneven surface morphologies of a Cu₂O film with the roughness of 92.5 nm, while the X-ray diffraction analysis reveals that the layers are Cu₂O-type polycrystalline structures with the thickness of 493 nm and the crystallite size of 69.8(6) nm. The theoretical analysis of the current-voltage curve was provided to determine the values of electrical parameters of the most efficient solar cell of Ag/Cu₂O/Cu(100) and clearly indicate presence of two Schottky barriers at interfaces.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1141-1143
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Transitions between Confined and Unconfined States in p-Type Asymmetric GaAs/InGaAs/AlGaAs QW Structures
Autorzy:
Sitarek, P.
Ryczko, K.
Misiewicz, J.
Reuter, D.
Wieck, A.
Powiązania:
https://bibliotekanauki.pl/articles/1492827.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Pz
78.66.Fd
78.67.De
Opis:
We present contactless surface photovoltage spectroscopy and photoreflectance studies of 10 nm wide, p-type doped asymmetric GaAs/InGaAs/AlGaAs quantum well structures. The MBE grown structures differ in spacer thickness between the quantum well and the reservoir of holes. The doping causes that quantum well is placed in electric field. The surface photovoltage spectroscopy measurements gave us detailed information about the optical transitions between confined states and between confined and unconfined states. The comparison of experimental and numerical analysis allows us to identify all features present in the surface photovoltage spectroscopy and photoreflectance spectra. It has been found that spacer layer thickness has significant influence on surface photovoltage spectroscopy spectra.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 849-851
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Gain and Dark Current Studies on Planar Photodetectors Made on Annealed GaAs-on-Si
Autorzy:
Riesz, F.
Vo van, Tuven
Varrio, J.
Powiązania:
https://bibliotekanauki.pl/articles/1933966.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.Gz
73.50.Pz
73.40.Sx
Opis:
Interdigital, planar photodetectors were fabricated from annealed GaAs/Si heterostructures grown by molecular beam epitaxy using alloyed AuGe/Ni and non-alloyed Cr/Au contacts. The dark current and optical gain of the Cr/Au devices is higher than that of the AuGe/Ni devices. Contact degradation due to annealing and a p-like background doping consistently explains our data. The gain-optical power relationship follows a power law with an exponent close to -1.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 889-892
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector
Autorzy:
Korona, K. P.
Drabińska, A.
Trajnerowicz, A.
Bożek, R.
Pakuła, K.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/2036867.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Kp
73.50.Pz
78.40.Fy
Opis:
GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7-3.8 eV. Under negative bias U$\text{}_{B}$ below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4-3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 675-681
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zinc oxide/cuprous(I) oxide-based solar cells prepared by electrodeposition
Autorzy:
Pławecki, M.
Rówiński, E.
Mieszczak, Ł.
Powiązania:
https://bibliotekanauki.pl/articles/1075675.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
73.50.Pz
73.40.Sx
Opis:
The aim of this research was to fabricate zinc oxide/cuprous(I) oxide-based heterojunction solar cells with the use of electrodeposition methods, and further to investigate their structures and photovoltaic properties. The ZnO and Cu₂O were used as n- and p-type semiconductors, respectively, to fabricate photovoltaic devices based on Ag/ZnO/Cu₂O/Cu(100) heterojunction structures. The crystallite sizes of ZnO and Cu₂O were determined to be 25.4(3) nm and 69.8(6) nm, respectively. It was pointed out that efficiencies of the solar cells can be gradually adjusted, using different thicknesses of Cu₂O layers, to achieve values as high as 2.7%. The standard diode model and high device performance provide new insights into the issue, outlining guidelines for high-performance solar cells and suggesting that a metal-n-type semiconductor-p-type semiconductor nanostructure-crystal layered, sandwiched-type architecture is a promising platform: to boost the efficiency.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1144-1146
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoelectromagnetic Investigations of Graphene
Autorzy:
Nowak, M.
Solecka, B.
Jesionek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1376055.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Vp
73.50.Gr
73.50.Pz
78.67.Wj
Opis:
The photoelectromagnetic investigations of graphene has been performed using noncontact technique. The dependence of photoelectromagnetic response on magnetic field induction, illumination intensity for different photon energies, and frequency of illumination chopping is presented. We anticipate our paper to be a starting point for investigations of carrier diffusion length in this material. Such investigations should be essential for development of graphene electronic and optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1104-1106
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electronic Properties of InAs/GaAs Self-Assembled Quantum Dot Structures and Devices Studied by Photocurrent Spectroscopy
Autorzy:
Mowbray, D. J.
Fry, P. W.
Skolnick, M. S.
Itskevich, I. E.
Harris, L.
Ashmore, A. D.
Finley, J. J.
Wilson, L. R.
Schumacher, K. L.
Barker, J. A.
O'Reilly, E. P.
Al-Khafaji, M.
Cullis, A. G.
Hopkinson, M.
Clark, J. C.
Hill, G.
Powiązania:
https://bibliotekanauki.pl/articles/2014190.pdf
Data publikacji:
2000-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
73.61.Ey
73.50.Pz
42.55.Px
Opis:
The power of photocurrent spectroscopy to study the electronic properties of InAs/GaAs self-assembled quantum dots is described. From comparison of results from different samples it is shown that photocurrent provides a direct means to measure absorption spectra of quantum dots. Studies in high electric field enable the electron-hole vertical alignment to be determined. Most surprisingly this is found to be opposite to that predicted by all recent predictions. Comparison with theory shows that this can only be explained if the dots contain significant amounts of gallium, and have a severely truncated shape. The nature of the ground and excited state transitions, carrier escape mechanisms from dots, in-plane wave function anisotropies and the modal gain of a quantum dot laser are determined.
Źródło:
Acta Physica Polonica A; 2000, 98, 3; 279-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Localized Electric Field in the Type-II InAs/GaAsSb/GaAs Structure
Autorzy:
Lee, S.
Kim, J.
Yoon, S.
Kim, Y.
Honsberg, C.
Powiązania:
https://bibliotekanauki.pl/articles/1398577.pdf
Data publikacji:
2016-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.66.Fd
78.40.-q
73.40.Lq
73.50.Pz
Opis:
The effect of localized electric field (F) was investigated in the type-II InAs/GaAsSb/GaAs structures. To compare type-I to type-II, two types of samples with different Sb contents was grown by molecular beam epitaxy, whose Sb contents are 3% (type-I) and 16% (type-II), respectively. In the both samples, we performed excitation power dependent-photoreflectance at 10 K and the result showed that the period of the Franz-Keldysh oscillation, revealed above the band gap $(E_{g})$ of GaAs, was broadened in the only type-II system, which means that F was also increased because it is proportional to the period of the Franz-Keldysh oscillation while the period of the Franz-Keldysh oscillations stayed unchanged in type-I system. This phenomenon is explained by that the F was affected by the band bending effect caused by the spatially separated photo-excited carriers in the interface between GaAsSb and GaAs. The F changed linearly as a function of square root of excitation power as expected for the F. Moreover, F was calculated using fast Fourier transform method for a qualitative analysis, which is in a good agreement with the theory of triangular well approximation.
Źródło:
Acta Physica Polonica A; 2016, 130, 5; 1213-1216
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Charge Carrier Transport in Non-Homogeneous MDMO-PPV Polymer
Autorzy:
Kažukauskas, V.
Pranaitis, M.
Janonis, V.
Powiązania:
https://bibliotekanauki.pl/articles/1505467.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Hb
73.50.Gr
73.50.Pz
73.61.Ph
Opis:
By thermally stimulated currents we have investigated carrier transport and trapping in [poly-(2-methoxyl, 5-(3,77dimethyloctyloxy)] paraphenylenevinylene (MDMO-PPV). To assure selective excitation of the defect states the spectral width of the exciting light was varied from 1.77 eV up to 3.1 eV. The thermally stimulated current curves were shown to be a superposition of carrier generation from trapping states and thermally stimulated mobility growth. The extrinsic excitation resulted in 0.16 eV photoconductivity effective activation energy values, which decreased down to 0.05 eV for the intrinsic excitation. The deeper states with activation energies of 0.28-0.3 eV and 0.8-0.85 eV were identified, too. The results are direct indication of distributed in energy trapping and transport states with the standard deviation of the density of states of about 0.015 eV.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 128-130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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