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    Wyświetlanie 1-9 z 9
    Tytuł:
    Magnetoresistive Properties of Manganite-Based Heterojunctions
    Autorzy:
    Devenson, J.
    Vengalis, B.
    Lisauskas, V.
    Oginskis, A.
    Anisimovas, F.
    Ašmontas, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807945.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    71.30.+h
    73.50.-h
    Opis:
    Hole-doped $La_{2/3}Ba_{1/3}MnO_{3}$ (LBaMO), $La_{2/3}Ca_{1/3}MnO_{3}$ (LCaMO) and $La_{2/3}Ce_{1/3}MnO_{3}$ (LCeMO) thin films were grown heteroepitaxially on 0.1 wt.% Nb-doped $SrTiO_{3}(100)$ (STON) substrates by magnetron sputtering. The prepared LBaMO/STON, LCaMO/STON, LCeMO/STON heterostructures demonstrated nonlinear rectifying current-voltage characteristics. Negative magnetorestance values have been indicated at low bias, meanwhile bias-dependent magnetoresistance has been measured at positive bias voltage values U > U_d where U_d is the interfacial potential, corresponding to a steep current increase at a forward bias.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1130-1132
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis and Electrical Properties of La-Pr-Mn-O Thin Films and Heterostructures
    Autorzy:
    Butkutė, R.
    Anisimovas, F.
    Oginskis, A. K.
    Steikūnienė, A.
    Devenson, J.
    Vengalis, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047223.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.70.-i
    71.30.+h
    73.50.-h
    75.70.Pa
    Opis:
    In this paper we report the results of synthesis and study of both ceramic samples and thin films of electronically doped La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and related heterostructures composed of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ and p-type La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$. The ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples were prepared by a conventional solid state reaction technique. Single phase La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films and La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$ Ca$\text{}_{0.33}$MnO$\text{}_{3}$ heterostructures were grown on lattice-matched perovskite NdGaO$\text{}_{3}$ substrates by pulsed laser deposition. Electron doping was indicated both for ceramic La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ samples and thin films from thermopower data. Both ceramic samples and thin films of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ demonstrated resistivity of about 10 mΩ cm at 300 K and semiconductor-like resistance vs. temperature behavior with cooling down to 78 K. Meanwhile, the resistance of the La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$/La$\text{}_{0.67}$Ca$\text{}_{0.33}$MnO$\text{}_{3}$ interface showed an anomalous peak at 185 K. A series of post-deposition annealing experiments demonstrated a crucial role of annealing temperature and ambience on both electrical and magnetic properties of La$\text{}_{0.7}$Pr$\text{}_{0.3}$MnO$\text{}_{3}$ material and the heterostructures.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 111-115
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Broad Band THz Sensing by 2DEG Bow-Tie-Type Diodes
    Autorzy:
    Valušis, G.
    Seliuta, D.
    Tamošiūnas, V.
    Širmulis, E.
    Balakauskas, S.
    Gradauskas, J.
    Sužiedėlis, A.
    Ašmontas, S.
    Anbinderis, T.
    Narkūnas, A.
    Papsujeva, I.
    Lisauskas, A.
    Roskos, H. G.
    Köhler, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041684.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    85.30.De
    72.30.+q
    Opis:
    We suggest a novel approach to detect broad band, 0.078-2.52 THz, electromagnetic radiation at room temperature using an asymmetrically-shaped bow-tie diode based on a modulation-doped GaAs/AlGaAs structure. We show that the voltage sensitivity in the range from 0.078 THz up to 0.8 THz has a plateau and its value is within 0.3-0.5 V/W. We consider the bow-tie diode design to increase the sensitivity of the device.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 184-187
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of Post Annealing on La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ Thin Films
    Autorzy:
    Cheng, W. F.
    Leung, C. W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047232.pdf
    Data publikacji:
    2007-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.-m
    73.50.-h
    Opis:
    The stability of La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ thin films fabricated by pulsed laser deposition, under different annealing procedures, was investigated. La$\text{}_{0.7}$Sr$\text{}_{0.3}$MnO$\text{}_{3}$ films were deposited on (100) LaAlO$\text{}_{3}$ substrates at 650ºC with the films thickness from 20 to 50 nm. The oxygen pressures used to fabricate the films were 150 mTorr and 100 mTorr. Then in situ annealing steps were performed at 100 and 150 mTorr, respectively. Curie temperatures (T$\text{}_{c}$) of the films were estimated from the peaks of the temperature dependent resistance data. For the films deposited at 100 mTorr and annealed at 150 mTorr, T$\text{}_{c}$ slightly dropped for short annealing time and recovered to 360 K for 30 min annealing. For the films deposited at 100 mTorr and annealed at 150 mTorr, it maintained semiconducting behavior without transition after annealing up to 30 minutes. For ex situ post annealing, it was found that the T$\text{}_{c}$ of the films strongly depended on the annealing procedures.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 1; 117-122
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fermi Level Position in GaMnAs - a Thermoelectric Study
    Autorzy:
    Osinniy, V.
    Jędrzejczak, A.
    Arciszewska, M.
    Dobrowolski, W.
    Story, T.
    Sadowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/2027483.pdf
    Data publikacji:
    2001-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.20.Ck
    75.30.Et
    73.50.-h
    Opis:
    Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E$\text{}_{F}$ and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E$\text{}_{F}$=275±50 meV and p=(2.5± 0.5)×10$\text{}^{20}$ cm$\text{}^{-3}$ (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10$\text{}^{20}$ cm$\text{}^{-3}$. At T=120 K, these parameters vary between E$\text{}_{F}$=380 meV and p=3.5×10$\text{}^{20}$ cm$\text{}^{-3}$ for x=0.015 to E$\text{}_{F}$=110 meV and p=5×10$\text{}^{19}$ cm$\text{}^{-3}$ for x=0.06.
    Źródło:
    Acta Physica Polonica A; 2001, 100, 3; 327-334
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films
    Autorzy:
    Balevičius, S.
    Stankevič, V.
    Žurauskienė, N.
    Šimkevičius, Č.
    Paršeliūnas, J.
    Cimmperman, P.
    Abrutis, A.
    Plaušinaitienė, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041723.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.47.Gk
    75.30.Gw
    73.50.-h
    68.55.Jk
    Opis:
    The magnetoresistance anisotropy of ultrathin La$\text{}_{0.83}$Sr$\text{}_{0.17}$Mn O$\text{}_{3}$ films deposited on NdGaO$\text{}_{3}$ substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 203-206
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Phonon Contribution in Thermodynamics and Transport Properties of Ultrathin Ceramic Films
    Autorzy:
    Jaćimovski, S.
    Šetrajčić, J.
    Jaćimovski, M.
    Stojanović, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1205327.pdf
    Data publikacji:
    2014-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.50.-h
    73.61.-r
    74.25.fc
    66.30.Xj
    65.40.-b
    Opis:
    The dispersion law, density states of phonons, thermodynamics properties and thermal conductivity was analyzed in this paper. It has been shown that at low temperatures, thermal conductivity of thin film is considerably lower that of bulk-structure. It turned out that phonons in thin film require activation energy for exciting. This leads to extremely low specific heat and specific conductivity at low temperatures. Consequences of quoted facts were discussed in detail and their influence on kinetic and thermodynamic properties of thin films is estimated.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 3; 811-819
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electrical Behaviour of Nanostructured Porous Silicon
    Autorzy:
    Azim-Araghi, M.
    Ashrafabadi, S.
    Kanjuri, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1419847.pdf
    Data publikacji:
    2012-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.30.+y
    73.40.Sx
    73.50.-h
    73.90.+f
    73.63.Rt
    68.37.Hk
    Opis:
    The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at $10^2 - 10^5$ Hz frequency range.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 1; 170-173
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    New Semiconductor Devices
    Autorzy:
    Balestra, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811906.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.-i
    73.20.-r
    73.21.-b
    73.23.-b
    73.30.+y
    73.40.-c
    73.50.-h
    73.63.-b
    Opis:
    A review of recently emerging semiconductor devices for nanoelectronic applications is given. For the end of the international technology roadmap for semiconductors, very innovative materials, technologies and nanodevice architectures will be needed. Silicon on insulator-based devices seem to be the best candidates for the ultimate integration of integrated circuits on silicon. The flexibility of the silicon on insulator-based structure and the possibility to realize new device architectures allow to obtain optimum electrical properties for low power and high performance circuits. These transistors are also very interesting for high frequency and memory applications. The performance and physical mechanisms are addressed in single- and multi-gate thin film Si, SiGe and Ge metal-oxide-semiconductor field-effect-transistors. The impact of tensile or compressive uniaxial and biaxial strains in the channel, of high k materials and metal gates as well as metallic Schottky source-drain architectures are discussed. Finally, the interest of advanced beyond-CMOS (complementary MOS) nanodevices for long term applications, based on nanowires, carbon electronics or small slope switch structures are presented.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 945-974
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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