Temat: 73.21.Fg - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures
Autorzy:: Požela, J.
Požela, K.
Sužiedėlis, A.
Jucienė, V.
Petkun, V.
Powiązania:: https://bibliotekanauki.pl/articles/1813388.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.10.Di
73.21.Fg
73.40.Kp
Opis:: A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the $Al_{0.2}Ga_{0.8}As$/GaAs/$Al_{0.2}Ga_{0.8}As$ high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs $(v_\text{max}=10^7 cm/s)$ and achieved the value of $4×10^7$ cm/s.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 989-992
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Mesoscopic Structures for Microwave-THz Detection
Autorzy:: Sužied.elis, A.
Ašmontas, S.
Požela, J.
Kundrotas, J.
Širmulis, E.
Gradauskas, J.
Kozič, A.
Kazlauskaité, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1813189.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.Fg
73.40.Kp
73.50.Lw
73.63.Kv
Opis:: Properties of microwave detectors of various design on the base of MBE grown GaAs and AlGaAs structures are discussed in this paper: simple asymmetrically shaped structures with heavily doped GaAs and AlGaAs layers of nanometric thickness as well as diodes with two-dimensional electron gas layers. Novel models of the detectors with partially gated two-dimensional electron gas layer as well as with small area GaAs/AlGaAs heterojuction are discussed to demonstrate different ways to increase the voltage sensitivity of the detectors of electromagnetic radiation in GHz-THz frequency range.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 803-809
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Autorzy:: Požela, K.
Požela, J.
Jucienė, V.
Vasil'evskii, I.
Galiev, G.
Klimov, E.
Sužiedėlis, A.
Žurauskienė, N.
Stankevič, V.
Keršulis, S.
Paškevič, Č.
Powiązania:: https://bibliotekanauki.pl/articles/1505525.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.10.Di
73.21.Fg
73.63.Hs
73.40.Kp
Opis:: The following peculiarities of electron transport in $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum wells with δ-Si-doped $In_{0.52}Al_{0.48}As$ barriers at high electric fields are discovered: (1) an enhancement of electron mobility by inserting the InAs phonon wall into the $In_{0.53}Ga_{0.47}As//In_{0.52}Al_{0.48}As$ quantum well, as well as increasing the InAs content in the modulation-doped $In_{0.8}Ga_{0.2}As//In_{0.7}Al_{0.3}As$ heterostructure; (2) a large decrease in electron mobility and a change of electron density with increasing electric field in the range of 1-4 kV/cm; (3) a magnetic field dependence of the threshold electric field for intervalley scattering of electrons; and (4) microwave current oscillations in high electric fields.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 170-172
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Optoelectronic Devices Employing One-Dimensional Photonic Structures
Autorzy:: Muszalski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1811908.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.Fg
73.40.Kp
78.20.Ek
78.40.Fy
78.47.Cd
78.55.Cr
78.60.Fi
78.67.De
Opis:: This paper reviews the experimental and theoretical results obtained during work on the modern semiconductor devices employing one-dimensional photonic structures. After short review of the physical features of structures consisting of 1D stack of the alternating high and low index layers, particular attention will be given to unique features of the devices employing microcavities: resonant cavity LEDs, resonant-cavity enhanced photo-detectors, vertical cavity surface emitting lasers, and also vertical external cavity surface emitting lasers. At the end the semiconductor saturable absorber mirrors are discussed.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 983-1000
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja