- Tytuł:
- Current Fluctuations in Single Barrier Vertical GaAs/AlAs/GaAs Tunneling Devices
- Autorzy:
-
Przybytek, J.
Baj, M. - Powiązania:
- https://bibliotekanauki.pl/articles/2047380.pdf
- Data publikacji:
- 2007-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.50.Td
73.40.Gk
73.43.Jn - Opis:
- We report the experimental results of the low temperature (T = 4.2 K) low-frequency current fluctuations measurements in the single-barrier resonant tunneling GaAs/AlAs/GaAs device with Siδ-doping in the center of the 10 nm thick AlAs barrier. The dimensions of the device were 200μm by 200μm. For the biasing voltages 0.1 V<|U|<1 V we observed the Fano factors between F = 0.7 and F = 0.95. We explain it by the existence of the trapping centers/imperfections/resonant levels inside the barrier participating in the transport for this range of voltages. Only for the smallest biasing voltages the Fano factor tends to F = 1, expected for a highly nontransparent barrier.
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 2; 221-226
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł