Wszystkie pola: G23 - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Current Shot Noise and Bunching of Electrons in Multilevel Quantum Dots
Autorzy:: Michałek, G.
Bułka, B.
Powiązania:: https://bibliotekanauki.pl/articles/1813512.pdf
Data publikacji:: 2008-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.23.-b
72.70.+m
Opis:: Currents and their fluctuations in multilevel quantum dots are studied theoretically in the limit of sequential tunneling. The spin degrees of freedom, many-body electronic states (singlet and triplet) as well as relaxation processes between the levels of the quantum dots are considered. In general, due to the rapid relaxation processes the shot noise is sub-Poissonian, however for a large polarization of the outgoing currents from the singlet and triplet states one gets the super-Poissonian type of the shot noise due to the bunching of tunneling events.
Źródło:: Acta Physica Polonica A; 2008, 113, 1; 27-30
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Two-Dimensional Analytical Threshold Voltage Modelling of Pseudomorphic $Si_{0.8}Ge_{0.2}$ p-Channel MOSFETs
Autorzy:: Ansaripour, G.
Powiązania:: https://bibliotekanauki.pl/articles/1492776.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.23.-b
Opis:: In this work we present an analytical model of the threshold voltage of SiGe p-channel metal oxide semiconductor field effect transistor based on the solution of the two-dimensional Poisson's equation and the ground state wave function of Fang and Howard, and taking into account the space charge in the channel and its effect on the surface potential. It is seen that the experimental data are well fitted within the experimental error that shows the appropriateness of the implemented model. Also comparing the calculated results to that of the calculated from the available recent reported models indicates a reasonable improvement to them.
Źródło:: Acta Physica Polonica A; 2011, 120, 6; 1043-1046
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Interference Effects in Three-Terminal Hybrid Systems with Quantum Dots
Autorzy:: Michałek, G.
Bułka, B.
Powiązania:: https://bibliotekanauki.pl/articles/1403609.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.63.Kv
74.45.+c
73.23.-b
Opis:: Conductance in a three-terminal hybrid system with two quantum dots is analyzed. Our attention is focused on an influence of decoherence on interference effects in the Andreev transport. In particular, we have found that a change of coupling to the third electrode can strongly modify a shape of the Fano-type resonances. This effect is due to activation of nonlocal Andreev reflection (CAR) processes.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 981-983
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Zero-Bias Anomaly in Magnetic Tunnel Junctions
Autorzy:: Yang, H.
Yang, S.
Ilnicki, G.
Martinek, J.
Parkin, S.
Powiązania:: https://bibliotekanauki.pl/articles/1536909.pdf
Data publikacji:: 2010-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.La
73.23.-b
73.22.-f
Opis:: We present experimental results, which may indicate the possibility of the coexistence of the Kondo effect and ferromagnetism in macroscopic planar magnetic tunnel junctions with a layer of nanodots inside tunnel barriers. A conductance double peak structure was observed. Magnetic field dependence of the splitting of a conductance peak, and temperature evolution of the conductance curves are well explained from the theoretical point of view according to the predictions of the Kondo physics and cotunneling in the Anderson quantum dot coupled to ferromagnetic leads.
Źródło:: Acta Physica Polonica A; 2010, 118, 2; 316-318
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Electrostatic Gates for GaN/AlGaN Quantum Point Contacts
Autorzy:: Czapkiewicz, M.
Cywiński, G.
Dybko, K.
Siekacz, M.
Wolny, P.
Gierałtowska, S.
Guziewicz, E.
Skierbiszewski, C.
Wróbel, J.
Powiązania:: https://bibliotekanauki.pl/articles/1403637.pdf
Data publikacji:: 2012-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Qv
73.61.Ng
73.23.-b
Opis:: We report on AlGaN/GaN quantum point contacts fabricated by using e-beam lithography and dry ion etching. The tunable nano-constrictions are defined by the integration of side and top gates in a single device. In this configuration, the planar gates are located on the both sides of a quantum channel and the metallic top gates, which cover the active region, are separated from the substrate by an insulating and passivating layers of $HfO_2$ or $Al_2O_3//HfO_2$ composite. The properties of devices have been tested at T = 4.2 K. For side gates we have obtained a very small surface leakage current $I_g < 10^{-11}$ A at gate voltages $|V_g|$ < 2 V, however, it is not enough to close the quantum channel. With top gates we have been able to reach the pinch-off voltage at $V_g$ = - 3.5 V at a cost of $I_g ≈ 10^{-6} A$, which has been identified as a bulk leakage current.
Źródło:: Acta Physica Polonica A; 2012, 122, 6; 1026-1028
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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