Temat: 73.22.Pr - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Magnetoresistance in Graphene-Based Ferromagnetic/ Rashba Barrier/Ferromagnetic Heterojunction
Autorzy:: Mohammadpour, H.
Hasanirokh, K.
Powiązania:: https://bibliotekanauki.pl/articles/1191228.pdf
Data publikacji:: 2016-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Vp
73.23.-b
73.22.Pr
Opis:: The quantum tunnelling of spin-polarized electrons through a Rashba barrier on a single layer graphene is studied by the scattering matrix method. It is shown that the magnetoresistance, defined as the difference between conductance at the presence and absence of the Rashba spin-orbit interaction, oscillates with the intensity of interaction. These oscillations are also observed in the conductance versus the potential energy of the barrier.
Źródło:: Acta Physica Polonica A; 2016, 129, 1; 75-78
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Pseudomagnetic Moment in Graphene in Time-Dependent Electric Field
Autorzy:: Goudarzi, H.
Setare, M.
Zarrin, S.
Powiązania:: https://bibliotekanauki.pl/articles/1505394.pdf
Data publikacji:: 2011-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.21.-b
73.22.Pr
72.80.Vp
Opis:: We study the dynamics of graphene ring in the presence of time-dependent electric field, where the Dirac particles in graphene ring interact with external electromagnetic fields. Using the Dirac Hamiltonian in electromagnetic field, we obtain the pseudomagnetic moment of the Dirac particles around a graphene ring. It is shown that the appeared pseudomagnetic moment term essentially can be in control by time-dependent electric field, and also it depends on the energy gap of graphene. It seems that one can construct a logic system in graphene and also in semiconductors by the pseudomagnetic moment term.
Źródło:: Acta Physica Polonica A; 2011, 119, 3; 424-427
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Fano-Kondo Effect of Magnetic Impurity with Side-Coupled Graphene Flake
Autorzy:: Krychowski, D.
Kopiński, J.
Lipiński, S.
Powiązania:: https://bibliotekanauki.pl/articles/1201853.pdf
Data publikacji:: 2014-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.22.Pr
72.80.Vp
73.23.-b
72.15.Qm
85.75.-d
Opis:: We examine transport through a spin-1/2 Kondo impurity, patterned between atomic scale electrodes in the presence of side-coupled nanographene flake. Impurity is attached to the edge of the flake, what allows to test the edge states. The Kotliar Ruckenstein slave boson approach is adopted to describe the strongly correlated impurity. We show that transport measurement of Fano-Kondo effect can serve as a spectroscopic probe of spin resolved graphene flake energy levels. The edge moments can be completely suppressed by gate voltage.
Źródło:: Acta Physica Polonica A; 2014, 126, 1; 202-203
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Functional Properties of Monolayer and Bilayer Graphene Hall-Effect Sensors
Autorzy:: Kachniarz, M.
Petruk, O.
Salach, J.
Ciuk, T.
Strupiński, W.
Bieńkowski, A.
Szewczyk, R.
Powiązania:: https://bibliotekanauki.pl/articles/1030244.pdf
Data publikacji:: 2017-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.55.Ge
85.75.Ss
85.30.Fg
81.05.ue
73.22.Pr
72.80.Vp
Opis:: The paper describes the design, development, and investigation of a new type of Hall-effect sensors of a magnetic field made of graphene. The epitaxial growth of high-quality graphene structures was performed using a standard hot-wall CVD reactor, which allows for easy integration with an existing semiconductors production technologies. The functional properties of developed Hall-effect sensors based on graphene were investigated on special experimental setup utilizing Helmholtz coils as a source of reference magnetic field. Monolayer and quasi-free-standing bilayer graphene structures were tested. Results presented in the paper indicate that graphene is very promising material for development of Hall-effect sensors. Developed graphene Hall-effect sensor exhibit highly linear characteristics and high magnetic field sensitivity.
Źródło:: Acta Physica Polonica A; 2017, 131, 5; 1250-1253
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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