- Tytuł:
- Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
- Autorzy:
-
Kaczmarski, J.
Taube, A.
Dynowska, E.
Dyczewski, J.
Ekielski, M.
Kamińska, E.
Piotrowska, A. - Powiązania:
- https://bibliotekanauki.pl/articles/1399114.pdf
- Data publikacji:
- 2013-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.05.Gc
81.15.Cd
85.30.Tv
72.80.Ng
73.61.Jc - Opis:
- In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
- Źródło:
-
Acta Physica Polonica A; 2013, 124, 5; 855-857
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł