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Wyszukujesz frazę "Le Van, Khoi" wg kryterium: Autor

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    Wyświetlanie 1-5 z 5
    Tytuł:
    Photovoltaic Effect on PbTe p-n Junction in the Presence of Magnetic Field
    Autorzy:
    Le Van, Khoi
    Grodzicka, E.
    Witkowska, B.
    Story, T.
    Gałązka, R. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929738.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    78.20.Ls
    72.80.Ga
    Opis:
    Photovoltaic spectra of PbTe p-n junction have been measured in the infrared spectral region in the temperature range of 8-260 K. The p-n junctions have been formed by cadmium diffusion into the p-type PbTe crystals. From the positions of the photovoltaic maxima the energy gap of the diode material has been determined. In the presence of a magnetic field up to 7 T, a pronounced oscillatory behavior of the photovoltage was observed in the Faraday and Voigt configurations. Experiments were performed as a function of the magnetic field intensity at a constant wavelength of the incident light. The energy of the interband magnetooptical transitions between the Landau levels in PbTe was determined and compared with the theoretical model of Adler, describing the energy band structure for the IV-VI compounds.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 721-724
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photovoltaic Effect of ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions in Presence of Magnetic Field
    Autorzy:
    Gałązka, R. R.
    Nguyen, The Khoi
    Khoi, Le Van
    Dobrowolski, W.
    Witkowska, B.
    Mycielski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933917.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    78.20.Ls
    72.80.Ga
    Opis:
    Photovoltaic effect of the ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions, prepared by vapor-transport epitaxy of ZnTe on Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate was studied. The photovoltaic measurements were carried out over the temperature range from 12 K to 300 K and in the magnetic field up to 6 T. In the magnetic field, maximum of the sensitivity corresponding to the energy of the forbidden gap of Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate splits into two components for σ$\text{}^{+}$ and σ¯ circular polarizations of incident light. This phenomenon was ascribed to the exchange interaction of the magnetic moments of Mn$\text{}^{++}$ ions with band electrons. From the value of the splitting energy the exchange integral N$\text{}_{0}$(α-β) was determined to be 1.15 ± 0.2 eV.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 841-844
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetooptical Properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n Junctions
    Autorzy:
    Khoi, Le Van
    Karczewski, G.
    Dobrowolski, W.
    Kossut, J.
    Gałązka, R. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1891332.pdf
    Data publikacji:
    1991-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    78.20.Ls
    72.80.Ga
    Opis:
    The first experimental evidence of the magnetic quantum oscillation in the photovoltaic effect of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se p-n junctions is reported. The p-n junctions were obtained in Pb$\text{}_{1-x}$MnxSe crystals with manganese content, 0 ≤ x ≤ 0.08 by introducing Cd donors by diffusion. Measurements were per formed between 5-85 K and in the presence of the magnetic field 0-7 T in the Faraday and Voigt configurations of the incident infrared radiation of various photon energies in the vicinity of the energy gap of a Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se. Strong oscillatory behavior of the photovoltage was observed as a function of the magnetic field intensity at a constant wavelength of the incident light. Using the model of Adler of the energy band structure modified by the exchange terms, and after identification of the initial and final states of the transitions, we derive the band parameters of the Pb$\text{}_{1-x}$Mn$\text{}_{x}$Se crystals.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 3; 445-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Self-Induced Persistent Photoconductivity in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ Heterojunctions
    Autorzy:
    Van Khoi, Le
    Dobrowolski, W.
    Zakrzewski, A.
    Dobaczewski, L.
    Gałązka, R. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952039.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.25.Tn
    78.20.Ls
    72.80.Ga
    Opis:
    At temperatures lower than 200 K the photomemory effect has been observed in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions. The persistent photoconductivity can be achieved either by illumination from an external light source or by a self-absorption of the electroluminescence radiation when a voltage of about 10 V for a few seconds is applied to the diode. Current-voltage characteristics are of the form I~ V$\text{}^{m}$. The capacitance and electroluminescence measurements show that the photomemory effect in ZnTe-Cd$\text{}_{1-x}$Mn$\text{}_{x}$ Te$\text{}_{1-y}$Se$\text{}_{y}$ heterojunctions can be caused by the bistable nature of the In dopant in the Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te$\text{}_{1-y}$Se$\text{}_{y}$ substrate. In the high resistivity interface layer and the substrate material indium forms centers similar to DX-like centers in Zn$\text{}_{x}$Cd$\text{}_{1-x}$Te and Cd$\text{}_{1-x}$Mn$\text{}_{x}$Te.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 883-886
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and Electrical Properties of Phosphorus Doped Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals
    Autorzy:
    Van Khoi, Le
    Jaroszyński, J.
    Witkowska, B.
    Mycielski, A.
    Gałązka, R. R.
    Cisowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968127.pdf
    Data publikacji:
    1997-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.30.+h
    71.55.Jv
    72.80.Ga
    Opis:
    The high pressure Bridgman technique was used to grow Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P crystals. Under the N$\text{}_{2}$ pressure of 30 atm., we obtained the p$\text{}^{+}$-Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10$\text{}^{18}$ cm$\text{}^{-3}$ and the room temperature conductivity σ(RT) ≈ 30 Ω$\text{}^{-1}$cm$\text{}^{-1}$. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10$\text{}^{3}$) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 4; 833-836
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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