- Tytuł:
- Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons
- Autorzy:
-
Matulionis, A.
Liberis, J.
Matulionienė, I.
Ramonas, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1813383.pdf
- Data publikacji:
- 2008-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Ht
72.70.+m
72.80.Ey - Opis:
- The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
- Źródło:
-
Acta Physica Polonica A; 2008, 113, 3; 967-970
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł