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    Wyświetlanie 1-4 z 4
    Tytuł:
    Electrical Characteristics and Temperature Dependence of Photovoltaic Parameters of GaInAsSb Based TPV Diode
    Autorzy:
    Kucur, B.
    Ahmetoglu, M.
    Andreev, I.
    Kunitsyna, E.
    Mikhailova, M.
    Yakovlev, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398767.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.40.Lq
    72.40.+w
    85.60.-q
    Opis:
    In this paper, electrical characterization of low bandgap GaInAsSb based thermophotovoltaic (TPV) diodes were investigated, as well as the temperature dependence of photovoltaic parameters such as short circuit current $(I_{sc})$ and open circuit voltage $(V_{oc})$. Investigation of the dark current mechanisms of the structure was carried out at several temperatures. The effect of light intensity on current-voltage characteristics was also investigated.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 767-769
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultrafast Phenomena in Freestanding LT-GaAs Devices
    Autorzy:
    Marso, M.
    Mikulics, M.
    Adam, R.
    Wu, S. Wu.
    Zheng, X.
    Camara, I.
    Siebe, F.
    Förster, A.
    Güsten, R.
    Kordoš, P.
    Sobolewski, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2041640.pdf
    Data publikacji:
    2005-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    72.40.+w
    78.30.Fs
    85.60.-q
    85.60.Gz
    Opis:
    We report on the fabrication and high-frequency performance of our photodetectors and photomixers based on freestanding low-temperature-grown GaAs. The MBE-grown low-temperature GaAs layers are lifted from the native GaAs substrate and transferred on top of variety of host substrates. The freestanding devices exhibit breakdown electrical fields above 200 kV/cm and dark currents below 3×10$\text{}^{-7}$ A at 100 V bias. Device photoresponse shows 0.55 ps wide electrical transients with voltage amplitudes up to 1.3 V, measured using an electro-optical sampling technique with 100 fs wide laser pulses. Photomixing experiments at 460 GHz yield a 9 times higher output power for the freestanding device on Si/SiO$\text{}_{2}$ host substrate compared to the native substrate.
    Źródło:
    Acta Physica Polonica A; 2005, 107, 1; 109-117
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultrathin Glass for the Photovoltaic Applications
    Autorzy:
    Dziedzic, J.
    Inglot, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1032413.pdf
    Data publikacji:
    2017-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    84.60.Jt
    71.20.Nr
    72.40.+w
    42.70.-a
    85.60.-q
    Opis:
    Chemically strengthened ultrathin glass with a thickness of less than 1 mm has many advantages, such as flexibility, smooth surface, good transmittance, excellent gas and water barrier, much higher toughened in relations to thermally tempered glass, higher impact resistance, increased corrosion resistance and much higher abrasion rate. Chemical strengthening process is a process where an ion exchange occurs by diffusion between the glass panes and the brine solution bath. The deeper penetration of the glass surface by ions contained in the brine bath contributes to the hardness of the glass sheets, which reduces the occurrence of surface defects that cause reflections. From the point of view of photovoltaic applications ultrathin glass significantly reduces the weight of the whole photovoltaic panel structure with respect to known solutions. Furthermore, the reduction of the glass thickness increases the transmission of solar energy in the visible range directly through the glass. In addition, chemical tempered glass has a lower reflectance of light from the surface than the thermally tempered glass. What is more, ultrathin glass is perfect substrate for deposition of nanomaterials, i.e. conductive films or quantum dots. In this work we demonstrate that chemically strengthened ultrathin glass is a perfect material for the photovoltaic applications, i.e. as a substrate for deposition of thin layers and for the design of photovoltaic modules of reduced weight.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 1; 176-178
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Semiconductor Materials for Ultrafast Photoswitches
    Autorzy:
    Coutaz, J.-L
    Powiązania:
    https://bibliotekanauki.pl/articles/2035566.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.60.-q
    85.60.Dw
    72.20.-i
    72.40.+w
    72.80.Ey
    42.65.Re
    Opis:
    This paper gives a review of semiconductor materials that are used to fabricate ultrafast photoswitches. The optoelectrical response of the switches is first described with simple models, from which the material requirements are deduced. The basic principles of the required material properties - ultrashort free carrier lifetime and high mobility, high dark resistivity, and high field breakdown - are explained. Then, the most popular ultrafast semiconductors are listed, together with their characteristics. A special emphasis is put on low-temperature grown GaAs. Finally, two applications of these ultrafast materials are presented, namely antennae for terahertz radiation and all-optical nonlinear devices.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 495-512
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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