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    Wyświetlanie 1-8 z 8
    Tytuł:
    Influence of Oxygen Impurities on Electrical Properties of Fullerene C$\text{}_{60}$
    Autorzy:
    Rabenau, T.
    Roth, S.
    Kremer, R. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933397.pdf
    Data publikacji:
    1995-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    72.80.Le
    72.20.-i
    Opis:
    We present high temperature dc, ac and contactless microwave conductivity results on solid-state C$\text{}_{60}$ (films and crystals) from room temperature up to 850 K. Heating pristine samples, which were exposed to the ambient atmosphere, under dynamic vacuum at first leads to a reduction of the electrical resistance and finally, above ≈700 K, to an increase in the resistance. The decrease is ascribed to oxygen desorption and the increase to the chemical reactivity of residual chemisorbed oxygen with the C$\text{}_{60}$ host molecules, respectively. Samples, annealed above 800 K, display a reversible temperature dependence of the resistance. The high temperature regime of their resistance exhibits an activated behaviour with an universal activation energy of 2E$\text{}_{a}$ = 1.85 ± 0.04 eV for crystals and films, which is identical to the HOMO-LUMO splitting of the C$\text{}_{60}$-molecules.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 4-5; 881-884
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis, Roentgenophase Analysis and Physical Properties of $TlIn_{1-x}Er_xSe_2$ Solid Solutions
    Autorzy:
    Mustafaeva, S.
    Kerimova, E.
    Gasanov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402129.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Eh
    71.20.-b
    71.20.Nr
    71.55.-i
    72.15.Eb
    72.15.Rn
    72.20.-i
    72.20.Ee
    72.20.Jv
    72.30.+q
    Opis:
    The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 697-699
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Traps Distribution in $TlInS_2$ Layered Crystals
    Autorzy:
    Isik, M.
    Gasanly, N.
    Ozkan, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808125.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    The trap centers and distributions in $TlInS_2$ were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × $10^{-16}$, 2.7× $10^{-12}$, and 1.8× $10^{-11} cm^{2}$, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 732-737
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Long-Lasting Current Transient Phenomena in TlBr
    Autorzy:
    Kažukauskas, V.
    Ziminskij, A.
    Vainorius, N.
    Gostilo, V.
    Shorohov, M.
    Bozhko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506282.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.40.+w
    72.60.+g
    72.80.Jc
    Opis:
    The persistent conductivity effects in TlBr were evidenced at the temperatures below about 200 K after the intrinsic light excitation. They were associated with the filling of the trapping states having thermal activation energy of about 0.08-0.12 eV and accompanied by the appearance of the pronounced maximum of the thermally stimulated currents. In this state the enhanced photoconductivity was observed that could be thermally quenched above about 180 K. The quenching is initiated by the emptying of the trapping states having activation energy of 0.63-0.65 eV.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 268-270
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Trapping Center Parameters in N-Implanted $Tl_2Ga_2S_3Se$ Single Crystals by Thermally Stimulated Currents Measurements
    Autorzy:
    Yildirim, T.
    Gasanly, N.
    Turan, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400156.pdf
    Data publikacji:
    2013-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    As-grown $Tl_2Ga_2S_3Se$ crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of $1 \times 10^{16} \text{ions}//cm^2$. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as $3.9 \times 10^{-20} cm^2$. Also the concentration of the traps was estimated to be $8.0 \times 10^{11} cm^{-3}$.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 4; 766-769
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermally Stimulated Current Study of Shallow Traps in As-Grown $TlInSe_2$ Chain Crystals
    Autorzy:
    Gasanly, N.
    Yildirim, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505407.pdf
    Data publikacji:
    2011-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    Thermally stimulated current measurements were carried out on as-grown $TlInSe_2$ single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K $s^{-1}$. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × $10^{13}$ and 3.4 × $10^{12} cm^{-3}$) and capture cross section (4.1 × $10^{-28}$ and 2.9 × $10^{-26} cm^2$) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 3; 437-441
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DX Puzzle: Where Are We Now?
    Autorzy:
    Wilamowski, Z.
    Suski, T.
    Jantsch, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920958.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    71.55.-i
    Opis:
    A brief review of the experimental data on the metastable DX-centers in AlGaAs is presented. The experimental proofs of the two-electron nature and of the intermediate, one-electron state of the DX-centers are discussed. We collect the available experimental data on the ground state, electron-emission and capture energies and we discuss the nature of the lattice barrier. The effect of splitting of these energies in AlGaAs alloys and the consequences of the splitting on the capture and emission kinetics are analyzed. The different character of the barrier and of the alloy splitting for donors of the IV and VI group is underlined. The necessity to consider the interdonor Coulomb interaction when discussing the experimental data is also pointed out.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 561-571
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers
    Autorzy:
    Wilamowski, Z.
    Jantsch, W.
    Ostermayer, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1888154.pdf
    Data publikacji:
    1991-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    71.55.-i
    Opis:
    The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 2; 283-286
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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