Wszystkie pola: high-frequency - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: High-Frequency Noise Sources in Quantum Wells
Autorzy:: Ardaravičius, L.
Liberis, J.
Matulionis, A.
Powiązania:: https://bibliotekanauki.pl/articles/2035523.pdf
Data publikacji:: 2002-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.70.+m
73.40.Kp
Opis:: Hot-electron noise is investigated for InGaAs and InAs quantum wells containing a two-dimensional electron gas channel in a pulsed electric field applied parallel to the interfaces. Noise sources resulting from hot-electron "thermal" motion, electron temperature fluctuations, and real-space transfer are observed. The experimental results on hot-electron "thermal" noise are used to estimate energy relaxation time in the field range where other sources do not play any important role. Measurements of noise anisotropy in the plane of electron confinement are used to discuss real-space-transfer noise. High-frequency noise technique is used to study hot-electron trapping, and trap location in InAlAs/InGaAs/InAlAs heterostructure channels is determined.
Źródło:: Acta Physica Polonica A; 2002, 102, 2; 329-335
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors
Autorzy:: Starikov, E.
Shiktorov, P.
Gružinskis, V.
Varani, L.
Vaissière, J. C.
Palermo, C.
Reggiani, L.
Powiązania:: https://bibliotekanauki.pl/articles/2041806.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.30.+q
72.70.+m
Opis:: Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A$\text{}_{3}$B$\text{}_{5}$ compounds. This property is favorable for applications of nitrides in the THz frequency range.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 408-411
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating
Autorzy:: Subačius, L.
Kašalynas, I.
Powiązania:: https://bibliotekanauki.pl/articles/1179478.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
72.20.Ht
Opis:: Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 275-279
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: High-Frequency Noise in Modern FET/HEMT Channels Caused by the Excitation of 2D-Plasma Waves
Autorzy:: Shiktorov, P.
Starikov, E.
Gružinskis, V.
Varani, L.
Reggiani, L.
Powiązania:: https://bibliotekanauki.pl/articles/1505464.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Ht
72.30.+q
72.70.+m
Opis:: The problems related with the intrinsic noise in FET/HEMT channels induced by continuous branching of the total current between channel and gate are considered in the framework of a simple analytical model and its predictions on the current-noise spectra. Main branching-induced effects such as the appearance of an additional noise related to the excitation of plasma waves, its dependence on FET/HEMT embedding circuits, interference properties, etc. are analysed.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 117-120
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Experimental Investigation of High Pulse Power Microwave Resistive Sensor with Flat Frequency Response
Autorzy:: Kancleris, Ž.
Simniškis, R.
Dagys, M.
Tamošiūnas, V.
Ragulis, P.
Powiązania:: https://bibliotekanauki.pl/articles/1807940.pdf
Data publikacji:: 2009-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
72.20.Ht
85.30.De
Opis:: Two types of resistive sensors with flat frequency response for microwave pulse power measurements in X-band rectangular waveguide WR-90 up to 100 kW were developed and experimentally investigated. The first type of the sensors demonstrates higher sensitivity and larger output signal, while the second one exhibits better linearity of the output signal. The experimental investigations revealed the sensitivity variation within ± 10% in 8.2-12.2 GHz frequency band.
Źródło:: Acta Physica Polonica A; 2009, 115, 6; 1122-1124
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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