- Tytuł:
- Transport in GaAs/AlAs/GaAs [111] Tunnel Junctions
- Autorzy:
-
Lewińska, S.
Gryglas-Borysiewicz, M.
Przybytek, J.
Baj, M.
Jouault, B.
Gennser, U.
Ouerghi, A. - Powiązania:
- https://bibliotekanauki.pl/articles/2047930.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.-r
71.20.Nr
73.23.Hk
73.63.Hs
72.10.Di
85.30.Mn
73.40.Gk - Opis:
- Resonant tunneling in single-barrier GaAs/AlAs/GaAs junctions grown in [111] direction was studied for samples with different concentration of silicon δ-doping in AlAs. In the I(V) characteristics, measured at 4 K, two kinds of peaks were observed: related to resonant tunneling via donors states in the barrier, and through X-minimum quantum well subbands. The results are compared to those previously obtained for analogous samples grown along [001] direction. The investigations reveal different symmetry of donor states in both cases.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 606-608
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł