- Tytuł:
- Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP
- Autorzy:
-
Przybytek, J.
Baj, M.
Słupiński, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1933962.pdf
- Data publikacji:
- 1995-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
- 71.55.Eq
- Opis:
- Our results of optical absorption, electronic transport and deep level transient spectroscopy measurements performed on n-type GaAs$\text{}_{1-x}$P$\text{}_{x}$ (x ≈ 0.2) strongly suggest that using both an enlarged-gap material (compared to GaAs) and hydrostatic pressure we can push down the acceptor level of the distorted configuration of the EL2 defect, (EL2*) $\text{}^{–}\text{}^{/}\text{}^{0}$ , sufficiently low into the gap that the distorted configuration of the EL2 defect, EL2*, becomes stabilized.
- Źródło:
-
Acta Physica Polonica A; 1995, 88, 5; 881-884
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł