Stabilization of the Distorted Configuration of the EL2 Defect Induced by the Free Electron Capture in GaAsP

Our results of optical absorption, electronic transport and deep level transient spectroscopy measurements performed on n-type GaAs$\text{}_{1-x}$P$\text{}_{x}$ (x ≈ 0.2) strongly suggest that using both an enlarged-gap material (compared to GaAs) and hydrostatic pressure we can push down the acceptor level of the distorted configuration of the EL2 defect, (EL2*) $\text{}^{–}\text{}^{/}\text{}^{0}$ , sufficiently low into the gap that the distorted configuration of the EL2 defect, EL2*, becomes stabilized.