- Tytuł:
- Optical and Electrical Measurements of Low-Temperature InAlAs
- Autorzy:
-
Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R. - Powiązania:
- https://bibliotekanauki.pl/articles/1923833.pdf
- Data publikacji:
- 1992-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
73.60.Br
78.55.Cr - Opis:
- Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
- Źródło:
-
Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł