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    Wyświetlanie 1-15 z 15
    Tytuł:
    Effect of Deep-Level Defects on Transient Photoconductivity of Semi-Insulating 4H-SiC
    Autorzy:
    Suproniuk, M.
    Kamiński, P.
    Kozłowski, R.
    Pawłowski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1364028.pdf
    Data publikacji:
    2014-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.40.+w
    71.55.-i
    72.20.-i
    Opis:
    A model enabling the equilibrium conductivity and transient photoconductivity of semi-insulating 4H-SiC to be simulated has been demonstrated. Using this model, the simulations of both equilibrium conductivity and transient photoconductivity have been carried out. Both the simulation and experimental results have shown that the evolution of photoconductivity in time after switching on the band-to-band generation of electron-hole pairs is strongly affected by the properties of deep level defects. The results of transient photocurrent measurements confirm the simulations results indicating that the $Z_{1/2}$ center is a very effective recombination center in semi-insulating 4H-SiC having detrimental effect on the transient photoconductivity.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 4; 1042-1048
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Chemical Composition of Liquid Phase and Growth Process on Physical Properties of $Bi_2Se_3,$ $Bi_2Te_3$ and $Bi_2Te_2Se$ Compounds
    Autorzy:
    Hruban, A.
    Materna, A.
    Dalecki, W.
    Strzelecka, G.
    Piersa, M.
    Jurkiewicz-Wegner, E.
    Diduszko, R.
    Romaniec, M.
    Orłowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492965.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.10.-d
    72.15.-v
    72.20.-I
    73.20.-r
    Opis:
    We studied synthesis and crystal growth of $Bi_2Te_3,$ $Bi_2Se_3$ and $Bi_2Te_2Se$ compounds by means of vertical Bridgman method. Crystals were grown from stoichiometric melts and under different molar ratio of Bi:Te, Bi:Se or Bi:Te:Se. The obtained crystals were characterized by X-ray diffraction analysis, energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, and the Hall effect measurements. Some of the samples demonstrated insulating bulk behavior, by means of resistivity versus temperature measurements.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 950-953
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis, Roentgenophase Analysis and Physical Properties of $TlIn_{1-x}Er_xSe_2$ Solid Solutions
    Autorzy:
    Mustafaeva, S.
    Kerimova, E.
    Gasanov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402129.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Eh
    71.20.-b
    71.20.Nr
    71.55.-i
    72.15.Eb
    72.15.Rn
    72.20.-i
    72.20.Ee
    72.20.Jv
    72.30.+q
    Opis:
    The results of high-frequency dielectric measurements on obtained $TlIn_{1-x}Er_xSe_2$ single crystals provided an opportunity to determine the mechanisms of dielectric losses and charge transport, and also to evaluate the density of states at the Fermi level; the average time of charge carrier hopping between localized states, average hopping distance, scattering of trap states near the Fermi level; concentration of deep traps.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 697-699
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Deep Traps Distribution in $TlInS_2$ Layered Crystals
    Autorzy:
    Isik, M.
    Gasanly, N.
    Ozkan, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1808125.pdf
    Data publikacji:
    2009-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    The trap centers and distributions in $TlInS_2$ were studied in the temperature range of 100-300 K by using thermally stimulated currents technique. Experimental evidence was found for the presence of three trapping centers with activation energies 400, 570, and 650 meV. Their capture cross-sections were determined as 6.3 × $10^{-16}$, 2.7× $10^{-12}$, and 1.8× $10^{-11} cm^{2}$, respectively. It was concluded that in these centers retrapping is negligible as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping. An exponential distribution of hole traps was revealed from the analysis of the thermally stimulated current data obtained at different light excitation temperatures. This experimental technique provided a value of 800 meV/decade for the trap distribution.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 3; 732-737
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Long-Lasting Current Transient Phenomena in TlBr
    Autorzy:
    Kažukauskas, V.
    Ziminskij, A.
    Vainorius, N.
    Gostilo, V.
    Shorohov, M.
    Bozhko, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506282.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.40.+w
    72.60.+g
    72.80.Jc
    Opis:
    The persistent conductivity effects in TlBr were evidenced at the temperatures below about 200 K after the intrinsic light excitation. They were associated with the filling of the trapping states having thermal activation energy of about 0.08-0.12 eV and accompanied by the appearance of the pronounced maximum of the thermally stimulated currents. In this state the enhanced photoconductivity was observed that could be thermally quenched above about 180 K. The quenching is initiated by the emptying of the trapping states having activation energy of 0.63-0.65 eV.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 268-270
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Excitation of Deep Defects by Intense Terahertz Radiation
    Autorzy:
    Ganichev, S. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/2011109.pdf
    Data publikacji:
    1999-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Ht
    72.40.+w
    72.30.+q
    Opis:
    An analysis is done of the ionization of deep impurity centers by high-intensity terahertz radiation, with photon energies tens of times lower than the impurity ionization energy. Under these conditions, ionization can be described as direct tunneling and phonon-assisted tunneling in which carrier emission is accompanied by defect tunneling in configuration space and electron tunneling in the electric field of the radiation. Within a broad range of intensity, frequency, and temperature, the terahertz electric field of the radiation acts like a static field. For very high frequencies and low temperatures an enhancement of tunneling as compared to static fields was observed. The transition between the quasi-static and the high frequency regime is determined by the tunneling time. For the case of deep impurities this is the time of redistribution of the defect vibrational system which depends strongly on temperature and the impurity structure.
    Źródło:
    Acta Physica Polonica A; 1999, 96, 5; 535-544
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Trapping Center Parameters in N-Implanted $Tl_2Ga_2S_3Se$ Single Crystals by Thermally Stimulated Currents Measurements
    Autorzy:
    Yildirim, T.
    Gasanly, N.
    Turan, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400156.pdf
    Data publikacji:
    2013-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    As-grown $Tl_2Ga_2S_3Se$ crystals have been doped by ion implantation technique. The samples were bombarded at room temperature in the direction perpendicular to the layer by N ion beam of about 120 keV having dose of $1 \times 10^{16} \text{ions}//cm^2$. The effect of N implantation with annealing at 300C was studied by using thermally stimulated current measurements. The investigations were performed in temperatures ranging from 10 to 290 K. The experimental evidence was found for presence of one deep hole trapping center with activation energy of 392 meV. The capture cross-section was calculated as $3.9 \times 10^{-20} cm^2$. Also the concentration of the traps was estimated to be $8.0 \times 10^{11} cm^{-3}$.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 4; 766-769
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermally Stimulated Current Study of Shallow Traps in As-Grown $TlInSe_2$ Chain Crystals
    Autorzy:
    Gasanly, N.
    Yildirim, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1505407.pdf
    Data publikacji:
    2011-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Jv
    72.80.Jc
    Opis:
    Thermally stimulated current measurements were carried out on as-grown $TlInSe_2$ single crystals. The investigations were performed in temperatures ranging from 10 to 260 K with heating rate of 0.3 K $s^{-1}$. The analysis of the data revealed the hole traps levels located at 6 and 57 meV. The activation energies of the traps have been determined using various methods of analysis, and they agree with each other. The concentration (2.8 × $10^{13}$ and 3.4 × $10^{12} cm^{-3}$) and capture cross section (4.1 × $10^{-28}$ and 2.9 × $10^{-26} cm^2$) of the traps were estimated for peaks A and B, respectively. It was concluded that in these centers retrapping was negligible, as confirmed by the good agreement between the experimental results and the theoretical predictions of the model that assumes slow retrapping.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 3; 437-441
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Metastability of Localized Neutral Donor State In GaAs
    Autorzy:
    Skierbiszewski, C.
    Jantsch, W.
    Lübke, K.
    Wilamowski, Z.
    Suski, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933994.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Fr
    71.55.-i
    Opis:
    Investigations of the photoconductivity of GaAs:Ge under hydrostatic pressure show, in addition to the well known persistent photoconductivity due to the DX state, another giant photoconductivity caused by a neutral localised "A₁" state of the donor. We find that the top of the barrier for the electron recapture to the Α₁ state is pinned to the conduction band edge and the capture cross-section σ(T → ∞) is surprisingly small.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 905-908
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DX Puzzle: Where Are We Now?
    Autorzy:
    Wilamowski, Z.
    Suski, T.
    Jantsch, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920958.pdf
    Data publikacji:
    1992-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    71.55.-i
    Opis:
    A brief review of the experimental data on the metastable DX-centers in AlGaAs is presented. The experimental proofs of the two-electron nature and of the intermediate, one-electron state of the DX-centers are discussed. We collect the available experimental data on the ground state, electron-emission and capture energies and we discuss the nature of the lattice barrier. The effect of splitting of these energies in AlGaAs alloys and the consequences of the splitting on the capture and emission kinetics are analyzed. The different character of the barrier and of the alloy splitting for donors of the IV and VI group is underlined. The necessity to consider the interdonor Coulomb interaction when discussing the experimental data is also pointed out.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 4; 561-571
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Coulomb versus Madelung Gap: Ordering in a System of Point Charges
    Autorzy:
    Sobkowicz, P.
    Wilamowski, Z.
    Kossut, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929618.pdf
    Data publikacji:
    1993-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Fr
    Opis:
    Spatial correlations of impurity charges in a mixed valence regime are studied with the use of Monte Carlo simulations. The influence of various kinds of disorder on the one-particle density of states is determined. A continuous transitions from a "soft" Coulomb gap (density of states vanishing only at the chemical potential) to a "hard" gap (with a finite range of energies with vanishing density of states) is found, driven by decreasing amount of built-in disorder in the system. The "hard" Coulomb gap resembles the Madelung gap, found in crystalline arrangements of charges. The similarity reflects the fact that both the Coulomb and Madelung gaps are manifestations of the same phenomenon, resulting from ordering of the positions of point charges, the only difference being the range of correlations.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 3; 515-518
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoconductivity in GaAlAs:Si Proves Negative U of DX Centers
    Autorzy:
    Wilamowski, Z.
    Jantsch, W.
    Ostermayer, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1888154.pdf
    Data publikacji:
    1991-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.20.Jv
    71.55.-i
    Opis:
    The analysis of the temperature dependence of the photoconductivity, amplitude in doped GaAlAs, provides a simple and convincing proof of the negative sign of the Hubbard correlation energy U, strictly speaking of the two-electron nature of the thermal emission process from DX centers. The proof is based on a comparison of the emission activation energy measured per emission event (DLTS) with that measured per electron.
    Źródło:
    Acta Physica Polonica A; 1991, 80, 2; 283-286
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Evidence for Alloy Splitting of Ge Related DX State in Al$\text{}_{x}$Ga$\text{}_{1-x}$As
    Autorzy:
    Skierbiszewski, C.
    Piotrzkowski, R.
    Lubke, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992190.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.20.Fr
    Opis:
    Thermal emission from resonant DX levels in Ge-doped GaAlAs was studied by measuring the temperature transients of free electron concentration. Pressure was used to fill the levels with electrons. Two emission peaks are observed in AlGaAs:Ge. This enables us to confirm that Ge, similarly to Si dopant, is stabilized upon dangling bond C$\text{}_{3v}$ configuration in AlGaAs. Analysis of experimental data allows us to determine parameters of two components of the DX multilevel system. Evaluated alloy splitting of ground and top of the barrier states: 45 meV is comparable with determined for Si donor.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 531-533
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoionization of Ge¯-DX State in GaAs
    Autorzy:
    Piotrzkowski, R.
    Dmowski, L. H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968412.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.20.Mt
    71.55.-i
    72.40.+w
    Opis:
    We have determined the efficiency of photoionization of Ge¯-DX state in GaAs as a function of photon energy. The optical ionization energy derived from the fitting is about 1.0 eV. It proves a large difference between optical and thermal ionization energies and confirms that for Ge-impurity, the broken-bond model and large lattice relaxation are valid and not the breathing mode with small lattice relaxation, resulting from the calculations presented for Ge-impurity in T.M. Schmidt, A. Fazzio, M.J. Caldas, Mater. Sci. Forum 196/201, 273 (1995).
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 950-952
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Features of Energy Spectrum of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te Doped with V
    Autorzy:
    Artamkin, A. I.
    Dobrovolsky, A. A.
    Dziawa, P.
    Story, T.
    Slynko, E. I.
    Slynko, V. E.
    Ryabova, L. I.
    Khokhlov, D. R.
    Powiązania:
    https://bibliotekanauki.pl/articles/2046904.pdf
    Data publikacji:
    2006-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Nr
    71.28.+d
    71.55.-i
    72.40.+w
    Opis:
    Recently new effects that are not characteristic of undoped lead telluride, such as the Fermi level pinning, giant negative magnetoresistance, were observed in Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te alloys doped with transition and rare earth elements - Cr, Mo, Yb. We have studied transport and magnetic properties of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te doped with another transition element - vanadium. A series of Pb$\text{}_{1-x}$Mn$\text{}_{x}$Te(V) samples of different composition and degree of doping was investigated. It was observed that the resistivity demonstrates activation behavior at low temperatures for the samples with considerable amount of vanadium as well as for the samples without vanadium. The activation energy is proportional to the Mn content. In some of the samples, photoconductivity was observed at low temperatures. The results are discussed in terms of a model assuming formation of the impurity level by the vanadium impurity and the effect of the Fermi level pinning by this level.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 2; 151-156
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-15 z 15

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