Autor: Grzegory, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Photoluminescence Study of Bulk GaN Doped with Beryllium
Autorzy:: Jaworek, M.
Wysmołek, A.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Powiązania:: https://bibliotekanauki.pl/articles/2043722.pdf
Data publikacji:: 2005-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
71.55.-i
71.35.-y
Opis:: Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
Źródło:: Acta Physica Polonica A; 2005, 108, 4; 705-710
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Time-Resolved Studies of Gallium Nitride Doped with Gadolinium
Autorzy:: Witek, B.
Wysmołek, A.
Kamińska, M.
Twardowski, A.
Potemski, M.
Boćkowski, M.
Grzegory, I.
Powiązania:: https://bibliotekanauki.pl/articles/1812021.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
75.50.Pp
71.55.-i
71.35.Ji
Opis:: Time-resolved photoluminescence experiments on high quality bulk GaN doped with Gd are presented. It was found that the decay time of Gd-related transitions observed for 4.2 K around 1.78 eV is of about 3 ms. Such a long decay time strongly supports the identification of this emission band as due to transitions between Gd³+(4f⁷) levels. The decay time measured for Gd-related transitions observed in the UV spectral range, close to the GaN band-gap, was found to be much faster than 1 μs. This suggests that these emission lines could hardly be correlated with internal transitions within Gd³+(4f⁷). Possible origin of the Gd-related UV luminescence is discussed.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1425-1430
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Mn Impurity in GaN Studied by Electron Paramagnetic Resonance
Autorzy:: Wołoś, A.
Palczewska, M.
Wilamowski, Z.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Porowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2036027.pdf
Data publikacji:: 2003-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
71.55.Eq
71.70.Gm
Opis:: We present the results of electron paramagnetic resonance investigations of GaN bulk crystals doped with Mn. The EPR experiment shows the Mn$\text{}^{2+}$ resonance in all the investigated n-type crystals, while in highly resistive samples extra doped with Mg acceptor the Mn$\text{}^{2+}$ resonance decreases. This is a consequence of the location of Mn acceptor level in GaN band gap. The analysis of the spin relaxation times reveals the Korringa scattering as the dominating spin relaxation mechanism in n-type GaN:Mn crystals. The effective exchange constant determined from spin relaxation rate temperature dependence is of the order of 14 meV.
Źródło:: Acta Physica Polonica A; 2003, 103, 6; 595-600
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Photoluminescence and Electron Paramagnetic Resonance Studies of Bulk GaN Doped with Gadolinium
Autorzy:: Lipińska, Z.
Pawłowski, M.
Żołnierowicz, H.
Wysmołek, A.
Palczewska, M.
Kamińska, M.
Twardowski, A.
Boćkowski, M.
Grzegory, I.
Powiązania:: https://bibliotekanauki.pl/articles/2046930.pdf
Data publikacji:: 2006-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.Cr
71.55.-i
71.35.-y
Opis:: Photoluminescence and electron paramagnetic resonance experiments on strain free GaN bulk crystals of wurtzite structure doped with gadolinium are reported. Efficient gettering of residual GaN donors by Gd was observed. Electron paramagnetic resonance showed that Gd ion incorporated into GaN lattice had Gd$\text{}^{3+}$(4f$\text{}^{7}$) configuration. The observed photoluminescence spectra were explained as due to intracenter Gd$\text{}^{3+}$(4f$\text{}^{7}$) transitions. No ferromagnetic behavior was detected.
Źródło:: Acta Physica Polonica A; 2006, 110, 2; 243-248
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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