Autor: Bednarek, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: New Donor State of S Symmetry
Autorzy:: Bednarek, S.
Adamowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1929769.pdf
Data publikacji:: 1993-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
Opis:: The influence of the short-range potential and the electron-phonon coupling on the donor spectrum is discussed. It is shown that the attractive short-range potential leads to a formation of a single additional state of s symmetry and with energy lying below a weakly perturbed hydrogen-like spectrum, which includes the 1s level. The new state can be called the 0s state. With decreasing short-range attraction, the energy of this state increases crossing over the hydrogen-like levels and, for weak short-range potential, the 0s state disappears. If the electron-phonon coupling is sufficiently strong, the donor hydrogen-like spectrum is perturbed only in a very narrow region of the leve1 crossing.
Źródło:: Acta Physica Polonica A; 1993, 84, 4; 820-822
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Infrared Absorption on Shallow Donors in CdF$\text{}_{2}$
Autorzy:: Bednarek, S.
Adamowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1887164.pdf
Data publikacji:: 1991-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
Opis:: A theoretical description of shallow donor absorption spectra in CdF$\text{}_{2}$ in the infrared region is given. The properties of the stable (Y) and bistable (In) donors are analyzed and quantatively described. It is shown that the bistability of donors and the shape of the infrared absorption band have the same origin, which is the combined effect of electron-LO-phonon coupling, conduction band non-parabolicity and short-range central-cell potential.
Źródło:: Acta Physica Polonica A; 1991, 79, 2-3; 393-396
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Conduction Band Influence on the Properties of Bistable Donors
Autorzy:: Bednarek, S.
Adamowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1890880.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
Opis:: A theoretical description of bistable donors in polar semiconductors is proposed. The donor states are described within the one-band approximation, which takes into account a finite width and nonparabolicity of the conduction band. The interaction between the defect and the crystal lattice is assumed in the Fröhlich form. For the bistable indium impurity in cadmium fluoride, a coexistence of strongly and weakly localized donor states has been obtained. The calculated energies for both the states and absorption band shape in the 3-eV range are in agreement with experiment.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 357-360
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Metastable One- and Two-Electron donor States in GaAs and CdF$\text{}_{2}$
Autorzy:: Bednarek, S.
Adamowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1947315.pdf
Data publikacji:: 1996-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
Opis:: The strongly localized one-electron (D$\text{}^{0}$) and two-electron (D¯) donor states are considered with the lattice deformation around the donor center taken into account. For GaAs, the donor energy levels have been calculated as functions of the hydrostatic pressure. The calculated energy positions and pressure coefficients agree with the experimental data. It is shown that the interaction with phonons reduces the probability of radiative transitions between the states of different localization and leads to the metastability of shallow-level donor states with respect to the D¯ state in GaAs and both the states (D$\text{}^{0}$ and D¯) in CdF$\text{}_{2}$.
Źródło:: Acta Physica Polonica A; 1996, 90, 4; 719-722
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Anion-Cation Site Dependence of Pressure Coefficients for Donors in GaAs
Autorzy:: Bednarek, S.
Adamowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1933711.pdf
Data publikacji:: 1995-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
Opis:: The theoretical model, based on the many-band approach, is proposed for the strongly localized donor states in GaAs. The pressure coefficients for the states of A$\text{}_{1}$ and Τ-2 symmetry have been calculated for the donors at the anion and cation sites. The obtained results show that these pressure coefficients are different from the conduction-band pressure coefficients and are dependent on the lattice site occupied by the impurity as well as on the symmetry of the donor states.
Źródło:: Acta Physica Polonica A; 1995, 88, 4; 671-674
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja