- Tytuł:
- Growth and Electrical Properties of Phosphorus Doped Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te Crystals
- Autorzy:
-
Van Khoi, Le
Jaroszyński, J.
Witkowska, B.
Mycielski, A.
Gałązka, R. R.
Cisowski, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1968127.pdf
- Data publikacji:
- 1997-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.30.+h
71.55.Jv
72.80.Ga - Opis:
- The high pressure Bridgman technique was used to grow Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P crystals. Under the N$\text{}_{2}$ pressure of 30 atm., we obtained the p$\text{}^{+}$-Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te single crystals 8-10 mm in diameter, with free-carrier densities as high as p ≈ 8×10$\text{}^{18}$ cm$\text{}^{-3}$ and the room temperature conductivity σ(RT) ≈ 30 Ω$\text{}^{-1}$cm$\text{}^{-1}$. Magnetoresistance measurements were carried out down to 1.3 K and up to 6 T. In Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te:P a strong increase in the acceptor binding energy as well as an immense (ρ(0,1.3K)/ρ(6T,1.3K) > 10$\text{}^{3}$) negative magnetoresistance are observed, by contrast, not seen in diamagnetic ZnTe:P. It is shown that these effects come from the formation of bound magnetic polarons and their destruction by an external magnetic field.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 4; 833-836
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł