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    Wyświetlanie 1-5 z 5
    Tytuł:
    A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
    Autorzy:
    Pietrzyk, M.
    Kowalski, B.
    Orlowski, B.
    Knoff, W.
    Story, T.
    Dobrowolski, W.
    Slynko, V.
    Slynko, E.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538868.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    71.20.Be
    Opis:
    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 293-295
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions
    Autorzy:
    Orlowski, B.
    Osinniy, V.
    Dziawa, P.
    Pietrzyk, M.
    Kowalski, B.
    Taliashvili, B.
    Story, T.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812243.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    The Fano resonance photoemission studies of Gd/(Pb, Gd)Te layers using synchrotron radiation were carried out and the electronic structure parameters like binding energies of $Gd^{3+}$ 4f and 5p shells, resonance and antiresonance energies for $Gd^{3+}$ were determined. The presence of $Eu^{3+}$ ions was observed in the (Pb, Eu)Te and (Eu, Gd)Te layers grown by MBE technique. The comparison of data for (Pb, Gd)Te compound with corresponding data for (Eu, Gd)Te and (Pb, Eu)Te layers indicates that we are not able to distinct the $Eu^{3+}4f$ and $Gd^{3+}4f$ electrons contribution to the valence band photoemission spectra because of small content od Gd and similar binding energy values. The key parameters allowing to prove exactly the presence of either $Eu^{3+}$ or $Gd^{3+}$ are the resonance and antiresonance energies which are significantly different for these ions and equal to 143 eV/137 eV and 150 eV/142 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
    Autorzy:
    Orlowski, B. A.
    Kowalski, B. J.
    Dziawa, P.
    Pietrzyk, M.
    Mickievicius, S.
    Osinniy, V.
    Taliashvili, B.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044511.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 803-807
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
    Autorzy:
    Pietrzyk, M. A.
    Kowalski, B. J.
    Orłowski, B. A.
    Knoff, W.
    Osinniy, V.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047678.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 275-281
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Resonant Photoemission Study οf 4f Electrons on the Surface οf Semiconductors
    Autorzy:
    Orłowski, B.
    Kowalski, B.
    Pietrzyk, M.
    Buczko, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811504.pdf
    Data publikacji:
    2008-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.Bm
    71.20.Mq
    07.85.-m
    Opis:
    The contribution of 4f electrons to the electronic structure of the semiconductor clean surface caused by the surface doping of it by rare-earth metal atoms (Eu, Sm) will be presented. The surface doping was performed by the controlled, sequential deposition of the rare-earth metal atoms on the clean surface in UHV conditions (Sm on GaN or CdTe) or by the doping of the layer volume of (EuGd)Te. After each deposition or surface treatment the synchrotron radiation was used to measure in situ the resonant photoemission spectra (the Fano type resonance) to study the contribution of 4f electrons of divalent and trivalent Sm and Eu ions to the valence band electronic structure of created sample. The first stages of the metal atoms deposition lead to the surface doping. Further metal atoms deposition leads to the growth of the metallic islands on the surface and causes the appearance of the sharp metallic Fermi edge in the energy distribution curves. Proper coverage and annealing of the sample surface with metal atoms leads to the diffusion of the metal atoms into the sample and results in an increase in the crystal doping and decrease in the metallic islands contribution to the measured spectra. As a result, the new electronic structure of the valence band can be created and investigated in situ.
    Źródło:
    Acta Physica Polonica A; 2008, 114, S; S-103-S-114
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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