Temat: 79.60.Jv - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Current-Voltage Characteristics of Nanowires Formed at the $Co-Ge_{99.99}Ga_{0.01}$ Interface
Autorzy:: Wawrzyniak, M.
Maćkowski, M.
Śniadecki, Z.
Idzikowski, B.
Martinek, J.
Powiązania:: https://bibliotekanauki.pl/articles/1537104.pdf
Data publikacji:: 2010-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.-k
79.60.Jv
73.63.Rt
Opis:: We present a method of measurement of the current-voltage (I-V) and conductance-voltage (G-V) characteristics of nanowires with quantum point contact formed at the $Co-Ge_{99.99}Ga_{0.01}$ interface. The effect of the Fermi level pinning leads to the formation of an ohmic contact between Co and $Ge_{99.99}Ga_{0.01}$. On the measured characteristics, above the threshold value of voltage an exponential current growth is observed. Such effect could be useful in the production of the electronic nanodevices.
Źródło:: Acta Physica Polonica A; 2010, 118, 2; 375-378
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Correlation Histograms in Conductance Measurements of Nanowires Formed at Semiconductor Interfaces
Autorzy:: Wawrzyniak, M.
Martinek, J.
Susła, B.
Ilnicki, G.
Powiązania:: https://bibliotekanauki.pl/articles/1810603.pdf
Data publikacji:: 2009-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.-k
79.60.Jv
73.63.Rt
Opis:: We demonstrate experimentally that conductance steps can occur in nanowires formed at metal-semiconductor junctions, between a cobalt tip and a germanium surface revealing long-duration plateaus at reproducible levels. The high reproducibility of the conductance traces obtained leads to very sharp peaks in the conductance histogram suggesting formation of stable atomic configurations. We develop a new type of correlation analysis of the preferred conductance values that provide new type of information on a few-atomic-nanocontact formation dynamics.
Źródło:: Acta Physica Polonica A; 2009, 115, 1; 384-386
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Growth of β-$Ga_2O_3$ Nanorods and Photoluminescence Properties
Autorzy:: Zhang,, S.
Zhuang, H.
Xue, C.
Li, B.
Shen, J.
Wang, D.
Powiązania:: https://bibliotekanauki.pl/articles/1814023.pdf
Data publikacji:: 2007-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 68.65.-k
79.60.Jv
81.15.Cd
Opis:: β-$Ga_2O_3$ nanorods were successfully fabricated through annealing $Ga_2O_3$/Mo films deposited on the Si (111) substrate by radio frequency magnetron sputtering technique. The morphology and structure of the as-synthesized nanorods were characterized by X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and energy dispersive X-rays spectroscopy. The results show that the formed nanorods are single-crystalline $Ga_2O_3$ with monoclinic structure. The diameters of nanorods are 200 nm and lengths typically up to several micrometers. A photoluminescence spectrum at room temperature under excitation at 325 nm exhibits two strong blue-light peaks located at about 413.0 nm and 437.5 nm, attributed to the recombination of bound electron-hole exciton in β-$Ga_2O_3$ single crystal. The growth process of the β-$Ga_2O_3$ nanorods is probably dominated by conventional vapor-solid mechanism.
Źródło:: Acta Physica Polonica A; 2007, 112, 6; 1195-1201
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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