Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

Wyszukujesz frazę "81.15.Gh" wg kryterium: Temat


Wyświetlanie 1-3 z 3
Tytuł:
Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio
Autorzy:
Golunski, L.
Sobaszek, M.
Gardas, M.
Gnyba, M.
Bogdanowicz, R.
Ficek, M.
Plotka, P.
Powiązania:
https://bibliotekanauki.pl/articles/1402345.pdf
Data publikacji:
2015-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.ug
82.80.Gk
68.55.A-
Opis:
The influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation. Microcrystalline diamond films were deposited on the seeded substrates in microwave plasma chemical vapour deposition using hydrogen-methane gas mixture. Seeding efficiency was investigated by means of scanning electron microscopy and Raman spectroscopy. Authors defined the new factor called as diamond ideality factor (di) which can give a quick estimation of quality of film and relative sp³ content. Few main peaks were identified at the following wave numbers: diamond sp³ peak 1332 $cm^{-1}$, D band peak 1355 $cm^{-1}$, C-H bending peak 1440-1480 $cm^{-1}$ and G band peak 1560 $cm^{-1}$. The best di was achieved for DMSO based colloid in all cases. The application of bias enhanced nucleation increases the diamond crystals size and the sp³/sp² ratio.
Źródło:
Acta Physica Polonica A; 2015, 128, 1; 136-140
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanocrystalline CVD Diamond Coatings on Fused Silica Optical Fibres: Optical Properties Study
Autorzy:
Ficek, M.
Bogdanowicz, R.
Ryl, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402648.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.ug
82.80.Gk
68.55.A-
78.66.Qn
Opis:
Seeding and growth processes of thin diamond films on fused silica optical fibres have been investigated. Glass pre-treatment by dip coating in two detonation nanodiamond (DND) seeding media has been studied. The DND suspension in ethyl alcohol and dispersion of DND in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) were chosen for the seeding purpose. The grain size distribution of nanodiamond particles in both seeding media was kept at the same level (approximately 10-50 nm). After the seeding nanocrystalline diamond films were deposited on the fibres using microwave plasma assisted chemical vapour deposition system. The results of the process were investigated using numerical analysis of scanning electron microscopy images. The molecular structure of diamond has been examined with micro-Raman spectroscopy. Thickness, roughness and optical properties of the nanocrystalline diamond films in VIS-NIR wavelength range were investigated on reference samples using spectroscopic ellipsometry. Light reflection at the fibre end-face for different deposition parameters was also investigated. Proposed seeding method can be further effectively applied for manufacturing of optical fibre sensors. Due to extraordinary properties of diamond, which include high chemical and mechanical resistance, such films are highly desired for optical sensing purposes.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 868-873
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Optical Properties of Antimony-Containing Epitaxial Layers Grown on GaSb by MOCVD
Autorzy:
Wesołowski, M.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1807649.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
81.05.Ea
68.55.A-
68.55.ag
68.55.J-
68.55.Nq
Opis:
Experimental results on MOCVD epitaxy of some antimonides on GaSb substrates are presented. Specific technological problems, which effect in narrow window of process parameters, were overcome and good quality of GaSb/GaSb, InGaSb/GaSb and InGaAsSb/GaSb layers was obtained. Structural, optical and electrical characterisation data are shown and discussed. Developed technology can state a ground work for realisation of antimonide-based optoelectronic devices.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-62-S-64
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

    Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies