- Tytuł:
- Thermal Desorption of Helium from Defected Silicon
- Autorzy:
-
Turek, M.
Droździel, A.
Pyszniak, K.
Wójtowicz, A.
Mączka, D.
Yuschkevich, Y.
Vaganov, Y.
Żuk, J. - Powiązania:
- https://bibliotekanauki.pl/articles/1402210.pdf
- Data publikacji:
- 2015-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.43.Vx
61.72.uf - Opis:
- The thermal desorption spectroscopy measurements of He implanted silicon samples are reported. The He implantation energy was 90 keV (at 45° tilt) while the fluence was 10¹⁶ cm¯². Additionally, the influence of Si pre-implantation (fluences in the range 10¹⁴-10¹⁶ cm¯², E=260 keV) was under investigation. The He releases from both interstitials/vacancies (β peak) and cavities (α peak or rather band consisting probably of at least two peaks) were observed. The α peak disappears for the pre-implantation fluences larger than 10¹⁵ cm¯², while β peak becomes broader and shifts toward higher temperatures. The thermal desorption spectra were collected using heating ramp rates in the range 0.3-0.7 K/s. Desorption activation energy of the β peak for different pre-implantation fluences was found using the Redhead analysis of the β peak shift. It varies from 0.97 eV for the sample that was not pre-implanted up to 1.3 eV for the sample pre-implanted with the fluence 10¹⁶ cm¯².
- Źródło:
-
Acta Physica Polonica A; 2015, 128, 5; 849-852
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł