- Tytuł:
- Electrical Behaviour of Nanostructured Porous Silicon
- Autorzy:
-
Azim-Araghi, M.
Ashrafabadi, S.
Kanjuri, F. - Powiązania:
- https://bibliotekanauki.pl/articles/1419847.pdf
- Data publikacji:
- 2012-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.30.+y
73.40.Sx
73.50.-h
73.90.+f
73.63.Rt
68.37.Hk - Opis:
- The electrical behaviour of porous silicon layers has been investigated on one side of p-type silicon with various anodization currents, electrolytes, and times. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in anodization time. In this work electrical conductivity of bulk silicon and porous layer which is formed by electrochemical etching is compared due to I-V measurements and calculation of activation energy. We have also studied the dependence of porous silicon conductivity on fabrication conditions. Also the effect of the temperature on conduction of porous silicon at different frequencies is investigated. At last dependence of capacitance on the temperature was probed at $10^2 - 10^5$ Hz frequency range.
- Źródło:
-
Acta Physica Polonica A; 2012, 122, 1; 170-173
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł