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    Wyświetlanie 1-5 z 5
    Tytuł:
    SPM Characterization of Titanium Disilicide Nanostructures Grown on a Ni-Modified Si(100) Substrate
    Autorzy:
    Koczorowski, W.
    Bazarnik, M.
    Czajka, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493616.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    68.37.Ps
    Opis:
    The paper presents our recent investigations of the early stage growth of titanium silicides on a modified Si(100) substrate. The substrate was modified by deposition of a minute amount of Ni atoms, and the subsequent flash annealing. This process led to the creation of parallel defect lines on the Si(100) surface. We expected TiSi_2 to form elongated structures on top and/or between the defect lines. Though this idea failed, stable nanostructures were observed and characterized using scanning probe microscopy (scanning tunneling microscopy and atomic force microscopy) methods.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 480-484
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mechanical and Electrical Properties, of ZnO-Nanowire/Si-Substrate Junctions Studied by Scanning Probe Microscopy
    Autorzy:
    Aleszkiewicz, M.
    Fronc, K.
    Wróbel, J.
    Klepka, M.
    Wojtowicz, T.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047440.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    68.37.Ps
    68.65.La
    73.21.Hb
    78.67.Lt
    Opis:
    Scanning tunneling spectroscopy was used to check the tunneling I-V characteristics of junctions formed by n-ZnO nanowires deposited on Si substrates with n- and p-type electrical conductivity (i.e. n-ZnO nanowire/n-Si and n-ZnO nanowire/p-Si junctions, respectively). Simultaneously, several phenomena which influence the measured I-V spectra were studied by atomic force microscopy. These influencing factors are: the deposition density of the nanowires, the possibility of surface modification by tip movement (difference in attraction forces between nanowires and the p-Si and n-Si) and the aging of the surface.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 255-260
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
    Autorzy:
    Mazur, P.
    Zuber, S.
    Grodzicki, M.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195467.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1131-1133
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sb Layers on p-GaN: UPS, XPS and LEED Study
    Autorzy:
    Grodzicki, M.
    Mazur, P.
    Pers, J.
    Zuber, S.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376064.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1128-1130
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural and magnetic properties of MBE grown (Fe/Pt) (111) multilayers
    Autorzy:
    Marynowska, A.
    Dynowska, E.
    Lewińska, S.
    Seki, T.
    Takanashi, K.
    Kanak, J.
    Pietruczik, A.
    Aleszkiewicz, P.
    Wawro, A.
    Ślawska-Waniewska, A.
    Baczewski, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1058152.pdf
    Data publikacji:
    2016-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.05.jh
    68.35.bd
    68.35.Ct
    68.37.Ef
    68.37.Ps
    68.65.Ac
    75.50.Bb
    75.70.Ak
    Opis:
    Series of Al₂O₃(0001)/Pt/(Fe/Pt)ₙ/Pt multilayers with variable number of bilayers n and thicknesses of individual layers were grown using molecular beam epitaxy to investigate influence of buffer layer structure, number of bilayers, and individual layer thickness on their structural and magnetic properties. Both columnar and monocrystalline 10 nm Pt (111) buffer layers were used in the experiment. Structure of Pt buffer layer determined the roughness of Fe/Pt interfaces and consequently magnetic properties of the multilayers. When multilayers were deposited on columnar Pt buffer layer, we observed increase of Fe/Pt interfaces roughness with increasing number of bilayers to values exceeding the nominal Fe/Pt bilayer thickness in the upper part of the sample volume, which resulted in the increment of coercivity in the sample with n=15 determined from hysteresis loops measured for perpendicular orientation of magnetic field. When Fe/Pt multilayers were deposited on monocrystalline Pt buffer layer, Fe/Pt interfaces were smooth regardless the number of bilayers. All samples, despite of the quality of buffer layer, number of bilayers, and individual layer thickness revealed easy magnetisation axis oriented in the sample plane.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 6; 1363-1370
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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