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    Wyświetlanie 1-3 z 3
    Tytuł:
    AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
    Autorzy:
    Mazur, P.
    Zuber, S.
    Grodzicki, M.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195467.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1131-1133
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sb Layers on p-GaN: UPS, XPS and LEED Study
    Autorzy:
    Grodzicki, M.
    Mazur, P.
    Pers, J.
    Zuber, S.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376064.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1128-1130
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Structural Characterization of $La_{1-x}Sr_xCoO_3$ Thin Films Deposited by Pulsed Electron Deposition Method
    Autorzy:
    Cieniek, Ł.
    Kopia, A.
    Cyza, A.
    Kowalski, K.
    Kusiński, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398370.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.-z
    81.10.Bk
    81.07.Bc
    68.55.-a
    68.55.J-
    68.55.Nq
    68.37.-d
    Opis:
    The aim of the presented research was to investigate the influence of strontium dopant on the structure and composition of $La_{1-x}Sr_{x}CoO_3$ (x=0, 0.1, 0.2) perovskite thin films. Pure and Sr doped LaCoO₃ thin films were grown by pulsed electron deposition technique on crystalline epi-polished Si/MgO substrates. Numerous analytical techniques (scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction) were applied to characterize their phase/chemical composition, structure and surface morphology. X-ray diffraction analysis showed the presence of pure LaCoO₃ perovskite phase in the undoped thin film. For Sr doped thin films $La_{0.8}Sr_{0.2}CoO_3$ (x=0.2), $La_{0.9}Sr_{0.1}CoO_3$ (x=0.1) small contents of La₂ O₃ and LaSrCoO₄ phases were noticed. The crystallite sizes, calculated from the Williamson-Hall plots, were about 18 nm for all analyzed films. According to scanning electron microscopy/atomic force microscopy observations, obtained thin films were free from defects and cracks. Atomic force microscopy (tapping mode) analysis revealed the differences in the shape and quantity of surface crystallites for all thin films as a result of Sr doping and different deposition parameters. Atomic force microscopy technique also allowed measurement of roughness parameters for analyzed samples. X-ray photoelectron spectroscopy analyses of chemical states of elements of thin films showed that their chemical state was stable across the film thickness and even at the interface with the MgO substrate. X-ray photoelectron spectroscopy analysis also allowed to evaluate chemical states and atomic concentration of La, Co, and Sr elements within cross-sections of deposited thin films.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 1121-1123
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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