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Wyświetlanie 1-15 z 19
Tytuł:
The Nonlinear Diffusion Equation Describing Spread of Impurities of High Density
Autorzy:
Janavičius, A. J.
Lūža, G.
Jurgaitis, D.
Powiązania:
https://bibliotekanauki.pl/articles/2038073.pdf
Data publikacji:
2004-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
Opis:
The nonlinear diffusion equation is derived by taking into account the local variations in the solvent density, within a mechanism of diffusion driven by random particle collisions. Analytical solutions for the case of spherical-symmetric nonlinear diffusion equation for spread of impurities in gas and solids are obtained and discussed. In this case, the solutions of the nonlinear diffusion equation are similar to solutions of Bernoulli equation. We note that the obtained solutions can be used to describe the shapes of impurity gas of high concentration or smoke clouds.
Źródło:
Acta Physica Polonica A; 2004, 105, 5; 475-483
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analytical Solution of Nonlinear Diffusion Equation in Two-Dimensional Surface
Autorzy:
Janavičius, A. J.
Turskienė, S.
Powiązania:
https://bibliotekanauki.pl/articles/2044566.pdf
Data publikacji:
2005-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
Opis:
We considered practically important case of nonlinear diffusion in the anisotropic plane where diffusion coefficients for diffusion in x and y axis directions can be different. This equation was transformed using similarity variables. The approximate analytical solution of the transformed equation expressed by power-series expansion for two variables about the zero point including only the first terms. The graphic representations show sufficient accuracy of the obtained analytical solution.
Źródło:
Acta Physica Polonica A; 2005, 108, 6; 979-983
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Analytical Solution of Nonlinear Diffusion Equation Describing Interdiffusion of Gases
Autorzy:
Janavičius, A.
Jurgaitis, D.
Powiązania:
https://bibliotekanauki.pl/articles/1585041.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
Opis:
The diffusion is the result of Brownian movement and occurs with a finite velocity. We consider the nonlinear diffusion equation, with diffusion coefficient directly proportional to the impurities concentration. In this case of diffusion from the constant source, the maximum displacements of diffusing particles are proportional to the square root of diffusion time. This result coincides with Brownian movement theory. The obtained analytically solutions were successfully applied for describing the diffusion and superdiffusion experiments' in solids. After theoretical consideration of application of this equation for diffusion in gases, we are investigating here the binary nonlinear diffusion in gases. We obtained the nonlinear interdiffusion equation, for the spherical symmetric case, and presented the approximate analytical solutions.
Źródło:
Acta Physica Polonica A; 2009, 116, 6; 1025-1028
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Nonlinear Diffusion in the Nonisothermical Case
Autorzy:
Janavičius, A. J.
Powiązania:
https://bibliotekanauki.pl/articles/1968857.pdf
Data publikacji:
1998-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
Opis:
We will discuss the properties of the nonlinear equation in the nonisothermical case. In our previous papers the diffusion coefficient directly proportional to the concentration of the impurities was proposed and it was exactly defined. Now the nonlinear diffusion equation is solved for the temperature and for the diffusion coefficient depending on time in a special way. The temperature function T(t) has the singularity at the free chosen time moment t$\text{}_{0}$. The obtained analytical solutions define the diffusion profiles for increasing temperatures and in the case of excited systems when the vacancies and the impurity's atoms are not in the thermal equilibrium with lattice. Considering the connection between temperature function and the population of excited states for atoms surrounding vacancies the possibility of the superdiffusion is shown.
Źródło:
Acta Physica Polonica A; 1998, 93, 3; 505-512
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Many-Staged Diffusion
Autorzy:
Janavičius, A.
Powiązania:
https://bibliotekanauki.pl/articles/1968915.pdf
Data publikacji:
1998-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
Opis:
We considered and solved the nonlinear diffusion equation formerly. The more complicated but more useful task of many-staged diffusion is solved in this paper. The obtained solution satisfies the initial distribution of the impurities and can be generalized for many-staged diffusion. Using these solutions we can take into account all the stages of a planary transistor formation.
Źródło:
Acta Physica Polonica A; 1998, 93, 5-6; 731-735
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Diffusion Equation with Diffusion Coefficient Directly Proportional to Concentration of Impurities
Autorzy:
Janavičius, A. J.
Poškus, A.
Powiązania:
https://bibliotekanauki.pl/articles/2042120.pdf
Data publikacji:
2005-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
Opis:
We analyzed a diffusion model based on the assumption that the sufficient condition for the mass flux at point x+L to be different from zero is a nonzero value of the impurity gradient and of impurity concentration at point x. In our model, the length of the jump of diffusing particles from one equilibrium position to another has a defined value L. By describing variation of impurity concentration with time when the frequency of the jumps depends on coordinates and L, the nonlinear diffusion equation was derived. We found that the diffusion coefficient in this nonlinear equation is directly proportional to the concentration of impurities, as it had been proposed in earliest papers. The derived nonlinear diffusion equation was solved numerically for the case of spherical symmetry.
Źródło:
Acta Physica Polonica A; 2005, 107, 3; 519-524
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Pretransition Phenomena in Fast-Proton Conductors
Autorzy:
Waplak, S.
Bednarski, W.
Ostrowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/2043554.pdf
Data publikacji:
2005-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.-v
66.30.-h
Opis:
In this paper we present recent experimental results related to nonlinear crystal field fluctuations and current flow in K$\text{}_{3}$H(SO$\text{}_{4}$)$\text{}_{2}$ fast-proton conductor far below the transition temperature T$\text{}_{g}$. The results for crystalline and powdered samples are quantitatively explained in the framework of soliton model of charge transport.
Źródło:
Acta Physica Polonica A; 2005, 108, 2; 261-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Investigation of the Cu Ions Diffusion into Bulk Lithium Niobate
Autorzy:
Sugak, D.
Syvorotka, I.
Yakhnevych, U.
Buryy, O.
Martynyuk, N.
Ubizskii, S.
Zhydachevskyy, Ya.
Suchocki, A.
Kumar, H.
Janyani, V.
Singh, G.
Powiązania:
https://bibliotekanauki.pl/articles/1030967.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
78.20.-e
Opis:
Spatial changes of optical properties of bulk LiNbO₃ crystal were investigated after annealing in CuO powder. The incorporation of copper ions into the crystal was confirmed by registration of additional absorption spectra that revealed formation of the absorption bands of both Cu⁺ (400 nm) and Cu²⁺ (1000 nm) ions. The changes of optical absorption caused by thermal treatment were registered along the direction of diffusion by the probe beam perpendicular to this direction. The anisotropy of diffusion was revealed. The maxima were observed on the depth dependences of additional absorption both for the wavelengths of 400 and 1000 nm for all main crystallographic directions. The concentrations of copper ions were calculated in accordance with the Smakula-Dexter formula. The X-ray diffraction study revealed reflexes which probably belong to CuNb₂O₆, CuNbO₃ and CuO. The halo was observed on these diffraction patterns that confirms the formation of the scattering centers (about 1 nm in diameter) in the near-surface region.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 965-972
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Co Ions Diffusion in Gd₃Ga₅O₁₂ Single Crystals
Autorzy:
Sugak, D.
Syvorotka, I.
Yakhnevych, U.
Buryy, O.
Vakiv, M.
Ubizskii, S.
Włodarczyk, D.
Zhydachevskyy, Ya.
Pieniążek, A.
Jakiela, R.
Suchocki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1030989.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
78.20.-e
Opis:
Spatial changes of properties of Gd₃Ga₅O₁₂ (GGG) single crystals caused by diffusion of cobalt ions during high-temperature annealing (1200°C, 24 h) in Co₃O₄ powder are investigated. The registration of these changes was carried out by optical spectrophotometry, microscopy and micro-Raman scattering methods. Changes in structure of near-surface layers of the crystal were investigated by X-ray diffraction technique. It was shown that the additional absorption induced by annealing is related to intra-center optical transitions in Co²⁺ ions, which occupy tetrahedral positions in the garnet structure at the distances of 250-500 μm from the crystal surface. The dependence of induced absorption with depth has got a non-monotonous character with a maximum at 400 μm. A comparison of the results obtained by different methods allows to suppose that the thermal treatment of GGG in the presence of cobalt ions leads to formation of the structurally and chemically non-uniform layer with a width about 500 μm.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 959-964
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays
Autorzy:
Janavičius, A.
Balakauskas, S.
Kazlauskienė, V.
Mekys, A.
Purlys, R.
Storasta, J.
Powiązania:
https://bibliotekanauki.pl/articles/1812042.pdf
Data publikacji:
2008-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
78.70.Ck
Opis:
We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about $10^{13} cm^{-3}$) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.
Źródło:
Acta Physica Polonica A; 2008, 114, 4; 779-790
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Modeling of Thermodiffusion Inertia in Metal Films Heated with Ultrashort Laser Pulses
Autorzy:
Janavičius, A. J.
Turskienė, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047101.pdf
Data publikacji:
2006-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
79.20.Ds
Opis:
Previously, we considered the analytical solution of nonlinear diffusion equation in two-dimensional surface. This allows us to consider the same nonlinear heat conduction equation for metals heated by a picosecond laser. After fast thermalization (within a few femtoseconds) of the laser energy and electron excitation in the conductivity band, electrons ballistically diffuse and transfer their energies to the target atoms and equilibrium electrons from the conductivity band. In this case, we have thermal diffusion of nonequilibrium excited electrons and thermal inertia for thermodiffusion. The relaxation time of excited conductivity electrons is directly connected with thermal inertia and depends on electron-electron collision frequencies. The theoretical temperature surface plots for the thermodiffusion of excited electrons were obtained from analytical solutions of nonlinear thermodiffusion equations.
Źródło:
Acta Physica Polonica A; 2006, 110, 4; 511-521
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Diffusion in Excited HgCdTe and Si Crystals
Autorzy:
Janavičius, A. J.
Norgėla, Ž.
Purlys, R.
Powiązania:
https://bibliotekanauki.pl/articles/2036987.pdf
Data publikacji:
2003-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
66.30.Hs
78.70.Ck
Opis:
We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal.
Źródło:
Acta Physica Polonica A; 2003, 104, 5; 459-467
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Amplitude Modulation and Demodulation in Strain Dependent Diffusive Semiconductors
Autorzy:
Ghosh, S.
Yadav, N.
Powiązania:
https://bibliotekanauki.pl/articles/2047356.pdf
Data publikacji:
2007-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.35.Mw
72.50.+b
66.30.-h
Opis:
In communication processes, amplitude modulation is very helpful to save power by using a single band transmission. Thus in this paper authors have explored the possibility of amplitude modulation as well as demodulation of an electromagnetic wave in a transversely magnetized electrostrictive semiconductor. The inclusion of carrier diffusion and phenomenological damping coefficient in the nonlinear laser-semiconductor plasma interaction adds a new dimension to the analysis present in this paper. This problem is analyzed in different wave number regimes over a wide range of cyclotron frequencies. It is found that the complete absorption of the waves takes place in all the possible wavelength regimes when the cyclotron frequency (ω$\text{}_{c}$) becomes exactly equal to (ν$\text{}^{2}$+ω$\text{}_{0}^{2}$)$\text{}^{1}\text{}^{/}\text{}^{2}$ in absence of damping parameter. It has also been seen that diffusion of charge carriers modifies amplitude modulation and demodulation processes significantly. The damping parameter plays a very important role in deciding the parameter range and selecting the side band mode that will be modulated by the above-mentioned interaction.
Źródło:
Acta Physica Polonica A; 2007, 112, 1; 29-40
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fast Diffusion of Metastable Vacancies in Surface of Excited Si Crystals
Autorzy:
Janavičius, A. J.
Turskienė, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047100.pdf
Data publikacji:
2006-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
66.30.-h
66.30.Hs
78.70.Ck
Opis:
We considered the practically interesting, very fast nonlinear diffusion of metastable vacancies in the surface of Si crystal, excited by soft X-rays. Here we used experimentally defined diffusion coefficients of singly and doubly negatively charged very fast vacancies generated by soft X-rays. These high concentration (about 10$\text{}^{13}$ cm$\text{}^{-3}$) metastable vacancies at room temperature can diffuse and exist in the crystal for a very long time (about 24 hours for not so fast neutral vacancies) changing electrical conductivity, the Hall mobility of carriers and generating some resonance phenomena in the lattice of Si crystal. We measured superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, where X-rays did not acted. In the paper we modified the formerly obtained analytical solution of nonlinear diffusion equation for calculation of distribution of vacancies in two-dimensional surface.
Źródło:
Acta Physica Polonica A; 2006, 110, 4; 505-510
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Physics with Chemically and Isotopically Pure Semiconductors
Autorzy:
Haller, E. E.
Powiązania:
https://bibliotekanauki.pl/articles/1929597.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
63.20.-e
66.30.-h
28.60.+s
Opis:
Chemically and isotopically pure semiconductors offer a wealth of interesting physics. We review a number of impurity complexes which were discovered in ultra-pure germanium. They have led the way to the widely pursued studies of hydrogen in numerous semiconductors. Isotope related effects and processes include neutron transmutation doping, a technique used for a number of silicon and germanium devices: isotopically pure and deliberately mixed crystals of germanium have been grown recently and have been used to study the dependence of the indirect bandgap and phonon properties on the mass and mass disorder of the nuclei. The large number of stable isotopes of the various semiconductors present a great potential for basic and applied studies. Semiconductor isotope engineering may become a reality because of the new economic and political world order.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 395-408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 19

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