- Tytuł:
- Implantation of Rare-Earth Atoms into Si and III-V Compounds
- Autorzy:
-
Kozanecki, A.
Langer, J. M.
Peaker, A. R. - Powiązania:
- https://bibliotekanauki.pl/articles/1924312.pdf
- Data publikacji:
- 1993-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
61.80.Jh
78.55.-m - Opis:
- Most recent results on doping of Si and semiconductors by the implantation of rare-earth atoms are reviewed. It is shown that up to the concentration of about 1018 cm' clustering and precipitation can be avoided. Post-implantation annealing leads not only to a decrease in radiation damage, but in some cases also to migration of rare-earth implants. The results of the rare earth lattice location by the Rutherford backscattering measurements are also reported.
- Źródło:
-
Acta Physica Polonica A; 1993, 83, 1; 59-70
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł