Wszystkie pola: Krynicki, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Heterogeneous Amorphization of P and As Implanted GaAs at Low Temperatures
Autorzy:: Krynicki, J.
Rzewuski, H.
Turos, A.
Powiązania:: https://bibliotekanauki.pl/articles/1924215.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.70.Tm
Opis:: Amorphization of P and As implanted GaAs at liquid nitrogen temperature has been investigated. The post-implantation damage was measured by means of Rutherford Backscattering (RBS) He$\text{}^{+}$ channeling technique. The critical dose and critical energy densities for amorphization were determined. From the results obtained it is concluded that for both ions the amorphization process can be satisfactorily described by the heterogeneous model.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 871-875
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Damage Production in As Implanted GaAs$\text{}_{1-x}$P$\text{}_{x}$
Autorzy:: Krynicki, J.
Warchoł, S.
Rzewuski, H.
Groetzschel, R.
Powiązania:: https://bibliotekanauki.pl/articles/1932091.pdf
Data publikacji:: 1995-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
Opis:: Post-implantation damage in GaAs$\text{}_{1-x}$P$\text{}_{x}$ compounds (x = 0, 0.15, 0.39, 0.65, and 1) implanted with 150 keV As ions in the dose range 1 × 10$\text{}^{13}$ -8 × 10$\text{}^{13}$ cm$\text{}^{-2}$ at 120 K was investigated. The depth distribution of damage and the degree of amorphization were measured by Rutherford backscattering 1.7 MeV He$\text{}^{+}$ channeling technique. The critical damage dose and the critical energy density necessary for amorphization were determined. It is shown that GaAsP is easier to amorphize (lower critical damage dose) than the binary crystals (GaAs, GaP) at low temperatures.
Źródło:: Acta Physica Polonica A; 1995, 87, 1; 249-252
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Heterogeneous Amorphization of Cd Implanted GaAs at Room Temperature
Autorzy:: Krynicki, J.
Rzewuski, H.
Groetzschel, R.
Claverie, A.
Powiązania:: https://bibliotekanauki.pl/articles/1886822.pdf
Data publikacji:: 1991-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.80.Jh
61.70.Tm
Opis:: Amorphization of GaAs implanted with Cd in the dose range of 2 x 10$\text{}^{13}$-1.2 x 10$\text{}^{14}$ ions/cm2 and the energy range of 20 to 180 keV at room temperature has been investigated. The degree and the depth distributions of postimplanted damage were measured by using RBS technique. The critical dose for each Cd-ion energy was determined. The amorphization models have been discussed. The results obtained are in agreement with theoretical predictions supporting heterogeneous amorphization of Cd-implanted GaAs at room temperature.
Źródło:: Acta Physica Polonica A; 1991, 79, 2-3; 349-353
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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