Autor: Auleytner, J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Nanostructure of Si-Ge Near-Surface Layers Produced by Ion Implantation and Laser Annealing
Autorzy:: Klinger, D.
Kret, S.
Auleytner, J.
Żymierska, D.
Powiązania:: https://bibliotekanauki.pl/articles/2035498.pdf
Data publikacji:: 2002-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Cc
61.72.Ff
61.72.Ji
61.72.Nn
61.80.Ba
Opis:: An annealing with the nanosecond laser light pulse is applied for crystal lattice reconstruction of a disturbed near-surface layer, which was created in semiconductor material as a result of the implantation process. Radiation with energy density higher than the threshold value causes the melting of the surface layer and then the epitaxial recrystallization from the melt on a different substrate. Structural changes occurring in the Ge implanted Si crystals after annealing with different energy densities are investigated by means of the cross-section high-resolution transmission electron microscopy.
Źródło:: Acta Physica Polonica A; 2002, 102, 2; 259-264
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals
Autorzy:: Auleytner, J.
Skorokhod, M. Ya.
Datsenko, L. I.
Khrupa, V. I.
Powiązania:: https://bibliotekanauki.pl/articles/1945730.pdf
Data publikacji:: 1996-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.10.-i
61.72.Cc
61.72.Ff
81.40.Cd
Opis:: Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
Źródło:: Acta Physica Polonica A; 1996, 90, 3; 541-546
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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