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Wyszukujesz frazę "Khrupa, V." wg kryterium: Autor

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    Tytuł:
    Integral Structure Perfection Diagnostics of Single Crystals Using Two Wavelengths of X-Ray Spectrum
    Autorzy:
    Datsenko, L.
    Krasulya, S.
    Machulin, V.
    Auleytner, J.
    Khrupa, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964123.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.10.-i
    Opis:
    A new approach to determination of microdefect structure parameters by means of single crystal diffractometer is proposed. The approach is based on the measurements of the integral reflectivity of a sample for two selected X-ray wavelengths providing with the approximations of thin and thick crystal, respectively.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 935-938
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Dislocation Interactions with Impurities on their Topographical Images in Silicon Crystals
    Autorzy:
    Auleytner, J.
    Skorokhod, M. Ya.
    Datsenko, L. I.
    Khrupa, V. I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945730.pdf
    Data publikacji:
    1996-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.10.-i
    61.72.Cc
    61.72.Ff
    81.40.Cd
    Opis:
    Silicon crystals contained copper atoms included by diffusion way during high temperature treatment have been investigated by means of X-ray transmission topography (Lang method). The studies allow us to observe the increase or decrease in the dislocation images widths in dependence on the time of diffusin annealing. In one case, during the more prolonged decoration process a build-up of decorating particles on dislocation occurs with widening of the topographic images of this dislocation. In another case (short time of decorating process) some compensation of defect deformation fields has been noticed (shortening of the mentioned images takes part). The obtained effects depend not only on the type of intrinsic impurities which take part in forming the Cottrell atmospheres but also on the duration of diffusion annealing. The observed results of interaction of dislocations with impurities have been confirmed by the studies of the integral reflectivity of decorated samples by means of the double-crystal spectrometer.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 3; 541-546
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Near Surface Distortions in Si Single Crystals by Means of Spatial Distribution Analysis of Reflected Beams
    Autorzy:
    Khrupa, V. I.
    Krasulya, S. M.
    Machulin, V.
    Datsenko, L. I.
    Auleytner, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1945216.pdf
    Data publikacji:
    1996-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.40.-z
    61.10.-i
    Opis:
    A diffractometrical method for quantitative evaluation of structure perfection level in silicon single crystals containing various types of near surface distortions is described. The method is based on the spatial distribution analysis of the reflected intensity in the Bragg case of diffraction. To implement the proposed approach one has to satisfy the condition of the so-called low X-ray absorption because in this case the penetration depth of diffracted radiation exceeds the corresponding value of extinction length. It permits us to obtain a remarkable value of noncoherent reflectivity due to defects placed in deep (on the extension of absorption length) regions of a crystal and therefore, to increase the sensitivity of scattering for low distortions of crystal lattice. Using the method described here the extension of various disturbed layers as well as the level of the static Debye-Waller factor of a crystal can be determined. The effect of surface distortions caused by mechanical treatment and the influence of the following thermal annealing as well as irradiation by high energy protons on the defective structure of the samples were investigated.
    Źródło:
    Acta Physica Polonica A; 1996, 89, 3; 309-313
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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