Temat: 42.55.Sa - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Physics of Stimulated Emission in Blue Semiconductor Lasers
Autorzy:: Nurmikko, A. V.
Powiązania:: https://bibliotekanauki.pl/articles/1994269.pdf
Data publikacji:: 1999-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
42.55.Sa
71.55.Eq
Opis:: In this article an overview is given about the special properties of the new blue and green semiconductor lasers, with emphasis on those basic processes that power the stimulated emission in these compact devices. Of special interest are the strong electron-hole Coulomb correlations which can be spectroscopically identified as unique features in quantum wells of wide band gap semiconductors.
Źródło:: Acta Physica Polonica A; 1999, 95, 1; 137-152
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Fast Speed Semiconductor Ring Lasers Using Optical Injection Locking
Autorzy:: Memon, M.
Fathallah, H.
Yu, S.
Powiązania:: https://bibliotekanauki.pl/articles/1399665.pdf
Data publikacji:: 2013-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
42.55.Sa
42.60.By
42.60.Fc
42.65.Pc
Opis:: Theoretical study for frequency response and modulation bandwidth of slave semiconductor ring laser in the master-slave configuration using optical injection locking has been investigated. Equations for frequency response of optical injection locking-semiconductor ring laser to the direct modulation, amplitude modulation of master laser, respectively, are derived and simulated. Enhancement in the modulation bandwidth of >100 GHz is reported between negative to positive detuning frequency and increasing injection power ratio.
Źródło:: Acta Physica Polonica A; 2013, 123, 2; 180-182
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Angular and Temperature Tuning of Emission from Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
Autorzy:: Wójcik-Jedlińska, A.
Muszalski, J.
Bugajski, M.
Łukowski, M.
Powiązania:: https://bibliotekanauki.pl/articles/1812025.pdf
Data publikacji:: 2008-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 42.55.Px
85.35.Be
78.67.De
42.55.Sa
42.55.Xi
Opis:: In this paper we demonstrate how the tuning of the VECSEL heterostructure can be precisely determined. Since the VECSEL active region is embodied in a microcavity, the photoluminescence signal collected from the chip surface is modified by the resonance of this cavity. The angle resolved photoluminescence measurements combined with the temperature tuning of the structure allowed us to precisely determine VECSEL emission features. The investigated structure consists of GaAs cavity with six InGaAs quantum wells and is designed for lasing at 980 nm.
Źródło:: Acta Physica Polonica A; 2008, 114, 5; 1437-1443
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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