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Wyszukujesz frazę "Bondarenko, A.V." wg kryterium: Autor

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    Wyświetlanie 1-3 z 3
    Tytuł:
    Developing measures to eliminate of hydrate formation in underground gas storages
    Autorzy:
    Volovetskyi, V. B.
    Doroshenko, Ya. V.
    Bugai, A. O.
    Kogut, G. M.
    Raiter, P. M.
    Femiak, Y. M.
    Bondarenko, R. V.
    Powiązania:
    https://bibliotekanauki.pl/articles/2172156.pdf
    Data publikacji:
    2022
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    well
    flowline
    hydrate formation
    local constraint
    regulating choke
    studnia
    powstawanie hydratów
    współczynnik ograniczenia
    dławik
    Opis:
    Purpose The objective of this article is the analysys of methods for preventing and eliminating hydrates formations, classifying them and choosing the best ones for use in underground gas storage facilities. Comprehensive measures for the stable operation of gas storage facilities in the presence of conditions for the occurrence of hydrates formations were developed. Zones, being potentially prone to the hydrates formation during the gas storage facilities operation were identified. Design/methodology/approach The operational parameters of gas storage wells during gas withdrawal are analyzed. The identified wells were operated under difficult conditions due to the deposition of hydrates on the wellheads, in flowlines and process equipment of gas storage facilities. The places of the highest hydrates accumulation on underground gas storages were determined: from the bottomhole of wells to the gas purification unit of the gas gathering station. Hydrate-prone zones were identified by computational fluid dynamic (CFD) modeling at the location of regulating choke installations in underground gas storage facilities. Findings The zones of the greatest hydrates accumulation on underground gas storages were determined: from the bottomhole of wells to the gas purification unit of the gas gathering station. The analysis of the methods used in gas storage facilities of Ukraine to prevent and eliminate hydrates formation was out. A set of measures was proposed to prevent the hydrates formation in storage facilities to ensure their stable operation. Based on the Euler approach (Mixture model) by CFD modeling, zones prone to hydrates formation were determined at the installation site of regulating chokes in underground gas storages. The influence of the degree of fittings opening on the location of potential zones prone to hydrates formation was estimated. The gas-dynamic processes in the internal cavity of the gas pipeline at the installation site of the control fittings were studied and their influence on the distribution of bulk particles of the gaseous and liquid phases was established. Based on the studies performed, it was recommended to change periodically the mode of well operation for a certain time by opening or closing the regulating choke under favorable conditions for the formation of hydrates, especially at low ambient temperatures. Research limitations/implications The obtained results of experimental studies and calculations showed that in order to solve the problem of hydrates formation at gas storage facilities, it is advisable to use diverse measures through the introduction of modern intelligent systems for monitoring and controlling the technological process. Further refinement of the algorithm of the proposed monitoring and control system with its approbation in production was provided. Practical implications The results of the experimental studies and CFD modeling carried out allowed providing a more reasonable approach to the application of various available methods and measures to prevent hydrates formation in underground gas storage facilities. This approach made it possible to develop new effective ways and measures to prevent such complication. Originality/value Based on the conducted experimental studies and modeling, the major zones prone to hydrates formation in underground gas storages were determined. The developed measures will allow timely detection and prevention of hydrates formation at gas storage facilities are original.
    Źródło:
    Journal of Achievements in Materials and Manufacturing Engineering; 2022, 111, 2; 64--77
    1734-8412
    Pojawia się w:
    Journal of Achievements in Materials and Manufacturing Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Functional model for the synthesis of nanostructures of the given quality level
    Autorzy:
    Suchikova, Y.O.
    Kovachov, S.S.
    Shishkin, G.O.
    Pimenov, D.O.
    Lazarenko, A.S.
    Bondarenko, V.V.
    Bogdanov, I.T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175807.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    functional model
    electrochemical etching
    quality level
    semiconductors
    nanostructures
    IDEF0 methodology
    model funkcjonalny
    trawienie elektrochemiczne
    poziom jakości
    półprzewodniki
    nanostruktury
    metodologia IDEF0
    Opis:
    Purpose: The aim of this paper is to develop a functional model for the synthesis of nanostructures of the given quality level, which will allow to effectively control the process of nanopatterning on the surface of semiconductors with tunable properties. Design/methodology/approach: The paper uses the IDEF0 methodology, which focuses on the functional design of the system under study and describes all the necessary processes with an accuracy sufficient for an unambiguous modelling of the system's activity. Based on this methodology, we have developed a functional model for the synthesis of nanostructures of the given quality level and tested its effectiveness through practice. Findings: The paper introduces a functional model for the synthesis of nanostructures on the surface of the given quality level semiconductors and identifies the main factors affecting the quality of nanostructures as well as the mechanisms for controlling the formation of porous layers with tunable properties. Using the example of etching single-crystal indium phosphide electrochemically in a hydrochloric acid solution, we demonstrate that the application of the suggested model provides a means of forming nanostructures with tunable properties, assessing the quality level of the nanostructures obtained and bringing the parameters in line with the reference indicators at a qualitatively new level. Research limitations/implications: Functional modelling using the IDEF0 methodology is widely used when process control is required. In this study it has been applied to control the synthesis of nanostructures of the given quality level on the surface of semiconductors. However, these studies require continuation, namely, the establishment of correlations between the technological and resource factors of synthesis and the acquired properties of nanostructures. Practical implications: This study has a significant practical effect. Firstly, it shows that functional modelling can reduce the time required to form large batches of the given quality level nanostructures. This has made it possible to substantiate the choice of the initial semiconductor parameters and nanostructure synthesis modes in industrial production from the theoretical and empirical perspective. Secondly, the presented methodology can be applied to control the synthesis of other nanostructures with desired properties and to reduce the expenses required when resources are depleted and the cost of raw materials is high. Originality/value: This paper is the first to apply the IDEF0 methodology to control the given quality nanostructure synthesis. This paper will be of value to engineers who are engaged in the synthesis of nanostructures, to researchers and scientists as well as to students studying nanotechnology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 107, 2; 72--84
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Chemical evaluation of the quality of nanostructures synthesized on the surface of indium phosphide
    Autorzy:
    Kovachov, S.S.
    Bogdanov, I.T.
    Pimenov, D.O.
    Bondarenko, V.V.
    Konovalenko, A.A.
    Skurska, M.M.
    Konovalenko, I.S.
    Suchikova, Y.O.
    Powiązania:
    https://bibliotekanauki.pl/articles/2175768.pdf
    Data publikacji:
    2021
    Wydawca:
    Stowarzyszenie Komputerowej Nauki o Materiałach i Inżynierii Powierzchni w Gliwicach
    Tematy:
    semiconductors
    nanostructures
    chemical criterion
    indium phosphide
    quality indicators
    półprzewodniki
    nanostruktury
    kryterium chemiczne
    fosforek indu
    wskaźniki jakości
    Opis:
    Purpose: The article proposes a methodology for determining the chemical quality criterion of porous layers synthesized on the surface of semiconductors, based on taking into account the chemical parameters of the surface that can affect the properties of nanostructures. Design/methodology/approach: The chemical quality criterion was evaluated in terms of stoichiometry, stability of structures over time, uniformity of distribution over the surface, and the presence of an oxide phase. As an example, a calculation is demonstrated for the por-InP/InP structure synthesized on a mono-InP surface. The results of calculating the chemical quality criterion were evaluated using the Harrington scale to rank samples by quality level. Findings: A chemical criterion for the quality of porous layers synthesized on the surface of semiconductors has been developed. This criterion contains a set of indicators sufficient for a comprehensive assessment of the surface condition and is universal in nature. The studies carried out make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors and open up new perspectives in the construction of a model of self-organization of a porous structure. Research limitations/implications: The chemical quality criterion does not allow evaluating the obtained nanostructures in terms of geometric parameters. Therefore, in the future, there is a need to develop a morphological quality criterion and determine a methodology for assessing a generalized quality criterion for nanostructures synthesized on the surface of semiconductors, which may include economic, environmental, technological indicators, and the like. Practical implications: Study results are expedient from a practical point of view, since they make it possible to reasonably approach the determination of the modes of electrochemical processing of semiconductors, synthesize nanostructures with predetermined properties, and create standard samples of nanomaterial composition. Originality/value: Methodology for assessing the quality of porous semiconductors by a chemical criterion has been applied for the first time in engineering science. The article will be useful to engineers, who are engaged in the synthesis of nanostructures, researchers and scientists, as well as specialists in nanometrology.
    Źródło:
    Archives of Materials Science and Engineering; 2021, 110, 1; 18--26
    1897-2764
    Pojawia się w:
    Archives of Materials Science and Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-3 z 3

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