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Wyświetlanie 1-15 z 48
Tytuł:
Magneto-Rotational Symmetry in Chiral Magnetoelectrodeposition
Autorzy:
Aogaki, R.
Morimoto, R.
Sugiyama, A.
Mogi, I.
Asanuma, M.
Miura, M.
Oshikiri, Y.
Yamauchi, Y.
Powiązania:
https://bibliotekanauki.pl/articles/1202193.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
47.35.Tv
Opis:
The chiral activities of electrodeposited surfaces fabricated under vertical magnetic fields were theoretically examined. Chiral activities arise from the micro-vortexes, called micro-MHD (magnetohydrodynamic) flows (MMF), activated under a tornado-like vortex called vertical MHD flow (VMF). It was concluded that the interaction between MMF and VMF determines the activities.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 378-379
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Chirality Induced by Magnetoelectrolysis
Autorzy:
Mogi, I.
Aogaki, R.
Morimoto, R.
Watanabe, K.
Powiązania:
https://bibliotekanauki.pl/articles/1202308.pdf
Data publikacji:
2014-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
47.35.Tv
Opis:
Surface chiral formation of Cu films was investigated in the galvanostatic electrodeposition under a magnetic field of 5 T perpendicular to the electrode surface. The surface chirality was examined by electrochemical voltammograms of a chiral molecule of tartaric acid. The chiral induction depended on the magnetoelectrodeposition time, and this implied that the formation of the self-organized state of magnetohydrodynamic flows around the electrode is crucial for the chiral formation.
Źródło:
Acta Physica Polonica A; 2014, 126, 1; 380-381
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Emission Related to Hot Plasmons and Plasma Wave Instability in Field Effect Transistors
Autorzy:
Dyakonova, N.
El Fatimy, A.
Meziani, Y.
Coquillat, D.
Knap, W.
Teppe, F.
Buzatu, P.
Diforte-Poisson, M.
Dua, C.
Piotrowicz, S.
Morvan, E.
Delage, S.
Powiązania:
https://bibliotekanauki.pl/articles/1492956.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
Opis:
The current flowing in two-dimensional channel of field effect transistors can generate different types of charge density perturbations. They can have a form of uncorrelated hot plasmons or plasma waves. The mechanism of plasma wave generation depends on the parameter ωt and on boundary conditions of the channel. At ωt ≪ 1 only hot plasmons can be generated. The THz emission due to radiative decay of hot plasmons has a broad spectrum and can be only poorly controlled by the transistor gate. The tunability of THz emission can be obtained in the case of the Dyakonov-Shur plasma wave instability. In this work we present experimental studies of THz emission in InGaP/InGaAs/GaAs and GaN/AlGaN based field effect transistors. We report on two types of emission onset: (i) a smooth one typical for hot plasmons generation and (ii) threshold-like one characteristic for plasma waves instabilities. The tunability and spectra of emission change depending on the transistor configuration. We discuss the results suggesting several possible mechanisms of plasma wave excitation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 924-926
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Terahertz Photovoltaic Response of Si-MOSFETs: Spin Related Effect
Autorzy:
Videlier, H.
Dyakonova, N.
Teppe, F.
Consejo, C.
Chenaud, B.
Knap, W.
Lusakowski, J.
Tomaszewski, D.
Marczewski, J.
Grabiec, P.
Powiązania:
https://bibliotekanauki.pl/articles/1492958.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
Opis:
We report on investigations of photovoltaic response of Si-MOSFETs subjected to terahertz radiation in high magnetic fields. Then a DC drain-to-source voltage is developed that shows singularities in magnetic fields corresponding to paramagnetic resonance conditions. These singularities are investigated as a function of incident frequency, temperature and two-dimensional carrier density. We tentatively attribute these resonances to spin transitions of the electrons bound to Si dopants and discuss the possible physical mechanism of the photovoltaic signal generation.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 927-929
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spectroscopy Studies of Erbium and Dysprosium Acetate Single Crystals
Autorzy:
Mondry, A.
Bukietyńska, K.
Powiązania:
https://bibliotekanauki.pl/articles/1945559.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
81.40.Tv
Opis:
Electronic absorption spectra of erbium and dysprosium acetate single crystals were measured. The intensities of 4f-4f transitions were calculated and the Judd-Ofelt Ω$\text{}_{λ}$ parameters evaluated. Heavy lanthanide acetates differ from other lanthanide carboxylate compounds by relatively high "hypersensitive" transition intensities and the Ω$\text{}_{2}$ parameters. These results are discussed in terms of a stronger polarization effect which can be explained by the distinctly shorter Ln-OH$\text{}_{2}$ bond in comparison with the Ln-OOC bond in the investigated system.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 233-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultra-low voltage VDCC design by using DTMOS
Autorzy:
Başak, M.
Kaçar, F.
Powiązania:
https://bibliotekanauki.pl/articles/1068583.pdf
Data publikacji:
2016-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.Tv
84.30.Vn
Opis:
In this paper, a new ultralow voltage and ultralow power voltage differencing current conveyor based on dynamic threshold voltage MOS transistors was proposed. The simulations were performed by using LTSpice Program with TSMC CMOS 0.18 μ m process parameters. A new notch filter configuration was also presented as an application for the proposed voltage differencing current conveyor. The power consumption of proposed voltage differencing current conveyor was simply 12.42 nW at symmetric ± 0.2 V supply voltage. The simulation results were found in close agreement with the theoretical results.
Źródło:
Acta Physica Polonica A; 2016, 130, 1; 223-225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Structural and Optical Properties of GDC Thin Films Deposited by Reactive Magnetron Sputtering
Autorzy:
Sakaliūnienė, J.
Čyvienė, J.
Abakevičienė, B.
Dudonis, J.
Powiązania:
https://bibliotekanauki.pl/articles/1503905.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.40.Tv
Opis:
The purpose of this paper was to analyze structural and optical properties of gadolinia-doped ceria (GDC, $Ce_{0.9}Gd_{0.1}O_{1.95}$) thin films. At first the ceria-gadolinia multilayer sandwich systems (4-12 layers) were deposited using reactive magnetron sputtering in the $O_2$/Ar gas mixtures. The films were formed with ≈ 90% ceria and ≈ 10% gadolinia. The GDC thin films deposited on Si (111) substrate were annealed at 600°C for 1 h in air. The thickness of the formed GDC multilayer systems was about 600 nm. The GDC thin film microstructure was investigated by X-ray diffraction and scanning electron microscopy. The texture coefficient $T_{c(hkl)}$ of GDC films was evaluated from the X-ray diffraction patterns. The crystallite size of GDC films was estimated from the Scherrer equation. Optical properties of the annealed GDC thin films were examined using a laser ellipsometer. The results show that the number of layers has the influence on GDC thin film formation. As follows from the analysis of structural and optical properties of GDC 12 layer system annealed at 600°C for one hour in air has the highest refractive index n = 2.17.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 63-65
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Analysis of the Dynamic Behavior οf InAlAs/InGaAs Velocity Modulation Transistors: A Geometrical Optimization
Autorzy:
Vasallo, B.
González, T.
Pardo, D.
Mateos, J.
Powiązania:
https://bibliotekanauki.pl/articles/1505612.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Tv
Opis:
The influence of the geometry on the dynamic behavior of InAlAs/InGaAs velocity modulation transistors is analyzed by means of a Monte Carlo simulator in order to optimize the performance of this new type of transistor. In velocity modulation transistors, based on the topology of a double-gate high electron mobility transistor, the source and drain electrodes are connected by two channels with different mobilities, and electrons are transferred between both of them by changing the gate voltages in differential mode. Consequently, the drain current is modulated while keeping the total carrier density constant, thus in principle avoiding capacitance charging/discharging delays. However, the low values taken by the transconductance, as well as the high capacitance between the two gates in differential-mode operation, lead to a deficient dynamic performance. This behavior can be geometrically optimized by increasing the mobility difference between the two channels, by increasing the channel width and, mainly, by reducing the gate length, with a higher immunity to short channel effects than the traditional architectures.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 193-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters
Autorzy:
Diabi, A.
Hocini, A.
Powiązania:
https://bibliotekanauki.pl/articles/1401300.pdf
Data publikacji:
2015-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.Kt
85.30.Tv
Opis:
In this work, we study the effects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The influences of the physical parameters (height of the Schottky barrier ($\Phi_{SB}$) capacity of oxide layer $(C_{INS})$ and geometrical parameter (nanotube diameter $(d_{CNT})$) on the static performance $(I_\text{ON}//I_\text{OFF})$ of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics$ (I_{D}=f(V_{DS})$ for different values of $V_{GS}$, and also the characteristics $(I_{D}=f(V_{GS}))$ for different values of $V_{DS}$. All these circuits are studied for a fixed value of $\Phi_{SB}=0.275 eV$.
Źródło:
Acta Physica Polonica A; 2015, 127, 4; 1124-1127
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Optical Properties of CuInSe$\text{}_{2}$ Thin Films
Autorzy:
Fouad, S. S.
Youssef, S. B.
Powiązania:
https://bibliotekanauki.pl/articles/1920947.pdf
Data publikacji:
1992-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.65.-s
81.40.Tv
Opis:
The optical constants of vacuum deposited CuInSe$\text{}_{2}$ thin films of different thicknesses (60-135 nm) were determined in the photon energy from 1.03 to 3.1 eV. It was found that both the refractive index n and the absorption index k are independent of the film thickness. The analysis of the experimental points of the refractive index revealed the existence of normal dispersion and fits Sellmeier dispersion formula for single oscillator model. Using the previous model the optical dielectric constant as well as the oscillator energy and dispersion parameter have been calculated. CuInSe$\text{}_{2}$ is found to be a direct gap semiconductor with a gap energy of 1.03 eV. At energies well above the absorption edge, the absorption behaviour can be explained by the existence of a forbidden direct transition with the same direct energy gap and an indirect one with energy gap of 0.85 eV.
Źródło:
Acta Physica Polonica A; 1992, 82, 3; 495-501
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Determination of the Analytical Relationship between Refractive Index and Density of $SiO_{2}$ Layers
Autorzy:
Rzodkiewicz, W.
Panas, A.
Powiązania:
https://bibliotekanauki.pl/articles/1807506.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.40.Tv
61.82.Ms
Opis:
The main goal of the work was the elaboration of the analytical functional relationship between refractive index n and density ρ of $SiO_{2}$ layers on silicon substrates. Such ρ (n) relationship will give possibility to determine elastic and non-elastic strains in $SiO_{2}$ layers on silicon substrates. Ellipsometric measurements by using variable angle spectroscopic ellipsometer of J.A. Woollam Company allowed determination of thicknesses and refractive indexes of silica layers. Measured $SiO_{2}$ masses and calculated volumes of the layers gave possibility to define the degree of densification of silicon dioxide layers on silicon substrates. The Hill approximation function curve turned out to be the best fitting. The obtained Hill curve shows saturation for the density of silicon dioxide equal to ca. 4.53 g/$cm^{3}$. This value corresponds to the value nearby the one of the crystalline polytypic silicon dioxide (stishovite). It seems to be physically established that degree of densification tends to the limiting value.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-92-S-94
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Autorzy:
Grigelionis, I.
Fobelets, K.
Vincent, B.
Mitard, J.
De Jaeger, B.
Simoen, E.
Hoffman, T.
Yavorskiy, D.
Łusakowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1492960.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.My
85.30.Tv
Opis:
We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 933-935
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Autorzy:
Vasallo, B.
Rodilla, H.
González, T.
Lefebvre, E.
Moschetti, G.
Grahn, J.
Mateos, J.
Powiązania:
https://bibliotekanauki.pl/articles/1506159.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.De
85.30.Tv
Opis:
We perform a physical analysis of the kink effect in InAs/AlSb high electron mobility transistors by means of a semiclassical 2D ensemble Monte Carlo simulator. Due to the small bandgap of InAs, InAs/AlSb high electron mobility transistors are very susceptible to suffer from impact ionization processes, with the subsequent hole transport through the structure, both implicated in the kink effect. When the drain-to-source voltage $V_{DS}$ is high enough for the onset of impact ionization, holes generated tend to pile up at the gate-drain side of the buffer. This occurs due to the valence-band energy barrier between the buffer and the channel. Because of this accumulation of positive charge, the channel is further opened and the drain current $I_{D}$ increases, leading to the kink effect in the I-V characteristics.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 222-224
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Influence of Reactive Gaseous Flow Rate and Composition on the Optical Properties of $TiO_2$ Thin Films Deposited by Dc Magnetron
Autorzy:
Stamate, M.
Lazar, G.
Nedeff, V.
Lazar, I.
Caraman, I.
Rusu, I.
Rusu, D.
Powiązania:
https://bibliotekanauki.pl/articles/1808135.pdf
Data publikacji:
2009-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Cd
81.40.Tv
Opis:
In the paper there are shown the changes in optical properties of $TiO_2$ thin films prepared by dc magnetron sputtering at different gas flow rates. We found that there is a drastic change in optical properties such as optical transmission, refractive index, extinction coefficient and optical band gap with the gaseous flow rate and composition. We observed an improvement in optical properties of the films that had been deposited at higher gaseous flow rate and at a certain gaseous composition.
Źródło:
Acta Physica Polonica A; 2009, 115, 3; 755-757
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Properties of Thermally Deposited Bismuth Telluride in the Wavelength Range of 2.5-10 µm
Autorzy:
Morsy, A.Y
Fouad, S.S.
Hashem, E.
El-Shazly, A.A.
Powiązania:
https://bibliotekanauki.pl/articles/1891983.pdf
Data publikacji:
1991-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.65.-s
81.40.Tv
Opis:
The optical constants (the refractive index n, the absorption index k and the absorption coefficient α) of Bi$\text{}_{2}$Te$\text{}_{3}$ thin films were determined in the wave-lenght range of 2.5 to 10 µm. The shape of the absorption edge in Bi$\text{}_{2}$Te$\text{}_{3}$ thin films has been determined from transmittance and reflectance measurements. The edge is of the form expected for direct transition corresponding to E$\text{}_{g}$ = 0.21 eV. The optical constants were used to determine the high frequency dielectric constant ε$\text{}_{0}$ = 58, the optical conductivity σ =σ$\text{}_{1}$ + σ$\text{}_{2}$ as well as the volume and surface energy loss functions. All these parameters were used to get some information about the intraband and interband transitions.
Źródło:
Acta Physica Polonica A; 1991, 80, 6; 819-825
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 48

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