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Wyświetlanie 1-15 z 580
Tytuł:
Signal Processing and Analysis of Pathological Speech Using Artificial Intelligence and Learning Systems Methods
Autorzy:
Wszołek, W.
Izworski, A.
Izworski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1400072.pdf
Data publikacji:
2013-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.70.+I
84.35.+i
Opis:
In this paper, selected results are presented of research which is carried on for over a decade and covers valuation of chosen signal processing methods suitable to analyze and valuate pathological speech. This valuation is necessary during solving many medical diagnostics problems and when planning therapy and rehabilitation of certain types of diseases. All presented examples are used in clinical practice in the area of dentistry, dental surgery, otolaryngology and most of all, in phoniatrics and speech correction.
Źródło:
Acta Physica Polonica A; 2013, 123, 6; 995-1000
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Novel Organic Semiconductor BTQBT with High Conductivity and High Mobility
Autorzy:
Inokuchi, H.
Imaeda, K.
Powiązania:
https://bibliotekanauki.pl/articles/1943958.pdf
Data publikacji:
1995-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
72.20.-i
Opis:
We have found a novel organic semiconductor, BTQBT, with a high electrical conductivity of about 10$\text{}^{-3}$ S cm$\text{}^{-1}$ and a high Hall mobility of about 3 cm$\text{}^{2}$ V$\text{}^{-1}$s$\text{}^{-1}$ at room temperature. We have also succeeded in measuring the temperature dependence of the Hall mobility. It varies with temperature as Τ$\text{}^{-1.6}$, which agrees with the theoretical Τ$\text{}^{-1.5}$ dependence for the mobility determined by lattice scattering. The characteristic transport property of BTQBT results from strong intermolecular interactions in the crystal, which is convinced by the energy dispersion with a bandwidth of about 0.5 eV from the theoretical and experimental band structures.
Źródło:
Acta Physica Polonica A; 1995, 88, 6; 1161-1170
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Shallow-Deep Instability of Donor States in Many-Valley Semiconductors
Autorzy:
Grinberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1890895.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.38.+i
Opis:
The shallow-deep instability of double and single donors in multi-valley semi conductors using the model Hamiltonian is studied. The obtained results describe properly the properties of double donors (in D$\text{}^{0}$ and D$\text{}^{+}$ state) in Ge and single deep donors in Al$\text{}_{x}$Ga$\text{}_{1-x}$As for 0.3 < x < 0.5.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 361-364
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Melting of Two-Dimensional Monolayer Films
Autorzy:
Patrykiejew, A.
Zientarski, T.
Binder, K.
Powiązania:
https://bibliotekanauki.pl/articles/1945440.pdf
Data publikacji:
1996-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.65.-i
64.60.-i
Opis:
The melting of two-dimensional films formed on the (100) fcc crystal is studied by Monte Carlo simulation. The results obtained suggest that in systems with only weakly corrugated surface potential, exhibiting the hexagonal close packed solid structure, the melting transition is followed by the Ising-type transition as predicted by the theory of Nelson and Halperin. In the case of highly corrugated surface potential, the film forms registered structure which disorders gradually as the temperature is raised.
Źródło:
Acta Physica Polonica A; 1996, 89, 5-6; 735-742
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Properties of Thin Film with S=1. Isothermal Susceptibility and Magnetic Specific Heat
Autorzy:
Gzik, M.
Balcerzak, T.
Powiązania:
https://bibliotekanauki.pl/articles/1967868.pdf
Data publikacji:
1997-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.60.-i
75.10.-b
75.70.-i
Opis:
The thermodynamic response functions were studied in thin films in the frame of the Blume-Emery-Griffiths model. The method is based on the analysis of the Gibbs free energy and involves calculations of the magnetization and quadrupolar moment distributions. The temperature dependencies of the susceptibility and specific heat are obtained for various biquadratic interaction parameter and non-zero single-ion anisotropy. The behaviour of these functions in different phases: ferromagnetic, paramagnetic and staggered quadrupolar are illustrated in figures and discussed.
Źródło:
Acta Physica Polonica A; 1997, 92, 3; 543-556
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
First X-Ray Evidence of Heterogeneous Impurity Correlations in Very Highly Doped n-GaAs
Autorzy:
Słupiński, T.
Zielińska-Rohozińska, E.
Powiązania:
https://bibliotekanauki.pl/articles/1968417.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
71.55.-i
61.10.-i
Opis:
Measurements of X-ray scattering from very highly doped GaAs:Te single crystals as a function of doping level and thermal treatment (annealing temperature) are reported. Reversible diffuse X-ray scattering occurs after sample annealing below a certain temperature. Presented results indicate an inhomogeneous arising of impurity-impurity correlations in GaAs:Te solid solution. Observed features of diffuse X-ray scattering in reciprocal space can be well understood within Krivoglaz theory of scattering due to spatial fluctuations of solute atoms pair correlation function and related lattice deformations. Good coincidence of diffuse X-ray scattering with the free electron concentration changes caused by an annealing is reported. Free electron concentration drop accompanying impurity correlation strongly suggests a certain form of impurity bonding.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 971-975
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Misfit Dislocation Sources in GaAs Epitaxial Layers
Autorzy:
Wierzchowski, W.
Mazur, K.
Strupiński, Wł.
Wieteska, K.
Graeff, W.
Powiązania:
https://bibliotekanauki.pl/articles/1945232.pdf
Data publikacji:
1996-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The formation of misfit dislocation was studied in GaAs homoepitaxial layers on the substrates containing considerable amount of isoelectronic indium. The layers were grown with metal-oxide chemical vapour deposition and chemical vapour deposition methods including low temperature process with tertiarbutylarsine arsenic source. The critical conditions of misfit dislocation formation were exceeded up to 5×. The samples were examined before and after epitaxial process with a number of different X-ray topographic and diffractometric methods, including high resolution synchrotron white beam topography. The crystallographic identification of the defects was supported by the numerical simulation of topographic images. It was found that a number of threading dislocations, continuing in the epitaxial layer from those existing in the substrate, did not take part in the formation of misfit dislocations despite a suitable slip system. On the other hand, the formation of misfit dislocations from small imperfections of epitaxial deposit was proved in many cases. A reasonable good quality of the layers was confirmed by the resolution of individual defects and only small broadening of rocking curves.
Źródło:
Acta Physica Polonica A; 1996, 89, 3; 341-346
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nonlinear Oscillations in New Anharmonic Potential
Autorzy:
Konwent, H.
Machnikowski, P.
Radosz, A.
Powiązania:
https://bibliotekanauki.pl/articles/1945369.pdf
Data publikacji:
1996-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
03.20.+i
Opis:
The classical equation of motion for a particle moving in the new double-well potential V(x) = ½ V$\text{}_{0}$(A cosh ax - 1)$\text{}^{2}$ is solved exactly for different values of the parameter A and the energy constant E. The solutions in various special cases are discussed.
Źródło:
Acta Physica Polonica A; 1996, 89, 4; 481-493
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of Lead Phthalocyanine Films
Autorzy:
Abd El-Rehim, N.
El-Samahy, A.
Powiązania:
https://bibliotekanauki.pl/articles/1946191.pdf
Data publikacji:
1996-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
Opis:
Current density-voltage characteristics have been obtained from thin films of lead phthalocyanine particles dispersed in a polymer binder when sandwiched between ohmic gold and blocking aluminium electrodes. At low voltages, the current in the forward direction shows Schottky diode behaviour. The diode parameters are evaluated using the model of Cheung and Cheung. Barrier heights and widths are determined as a function of applied voltage. A number of parameters is evaluated on the basis of the theory of space-charge-limited conduction, and the following values are obtained: p$\text{}_{0}$ = 8.5 × 10$\text{}^{18}$ m$\text{}^{-3}$, concentration of the traps per unit energy range at the valence band P$\text{}_{0}$ ≈ 2.5 × 10$\text{}^{44}$ J$\text{}^{-1}$m$\text{}^{-3}$, temperature parameter of trapping distribution T$\text{}_{c}$ ≈ 500 K and total trapping concentration, N$\text{}_{t}$ ≈ 1.7 × 10$\text{}^{24}$ m$\text{}^{-3}$.
Źródło:
Acta Physica Polonica A; 1996, 90, 3; 557-564
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Doping Properties of Amphoteric C, Si, and Ge Impurities in GaN and AlN
Autorzy:
Boguslawski, P.
Bernholc, J.
Powiązania:
https://bibliotekanauki.pl/articles/1948168.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
Opis:
Electronic structure of substitutional group-IV impurities C, Si, and Ge in hexagonal GaN and AlN were studied by quantum molecular dynamics. C$\text{}_{N}$ is a very shallow acceptor, and thus a promising p-type dopant. Both Si and Ge are excellent donors in GaN. However, in AlGaN alloys the DX configurations are stable for a sufficiently high Al content, which quenches the doping efficiency. Electronic structure of nearest-neighbor X$\text{}_{cation}$-X$\text{}_{N}$ pairs is also discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 735-738
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fe 3d Contribution to the Valence Band of Cubic Hg$\text{}_{1-x}$Fe$\text{}_{x}$S - Resonant Photoemission Study
Autorzy:
Kowalski, B. J.
Orłowski, B. A.
Szuszkiewicz, W.
Witkowska, B.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/1933837.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
Opis:
Resonant photoemission spectra of cubic Ηg$\text{}_{0.94}$Fe$\text{}_{0.06}$S were measured for photon energies near to the energy of intra atomic Fe 3p$\text{}^{6}$3d$\text{}^{6}$ → 3p$\text{}^{5}$3d$\text{}^{7}$ transition. The difference between the spectra taken at resonance and antiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 791-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy Relaxation in Two-Dimensional Electron GaS in InGaAs/InP via Electron-Acoustic Phonon Interaction
Autorzy:
Kreshchuk, A. M.
Novikov, S. V.
Savel'ev, I. G.
Polyanskaya, T. A.
Pődör, B.
Reményi, G.
Kovács, Gy.
Powiązania:
https://bibliotekanauki.pl/articles/1991650.pdf
Data publikacji:
1998-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.-i
Opis:
The energy relaxation in two-dimensional electron gas in In$\text{}_{0.53}$Ga$\text{}_{0.47}$As/InP has been studied in a wide range of electron temperatures (from 0.1 to 10 K). The energy loss rate of electrons is controlled by the interaction of electrons with the piezoelectric potential of acoustic phonons. The value of the piezoelectric constant for InGaAs lattice-matched to InP is deduced from theoretical fits of the experimental data: h$\text{}_{14}$=(1.1±0.1)×10$\text{}^{7}$ V/cm. Available data for the piezoelectric constant of In$\text{}_{x}$Ga$\text{}_{1-x}$As are discussed in the light of the results of this work.
Źródło:
Acta Physica Polonica A; 1998, 94, 3; 415-420
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Potential Parameters and Energy Dependence of Rotational Energy Transfer in Molecular Systems
Autorzy:
Agrawal, P. M.
Garg, V.
Patidar, K. R.
Powiązania:
https://bibliotekanauki.pl/articles/1929537.pdf
Data publikacji:
1993-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
35.20.-i
Opis:
The cross-sections for rotational transitions in a diatomic molecule due to collision with an atom were computed. An empirical relation is obtained that gives the dependence of cross-sections on the energy of the colliding system and the parameters of the interaction potential energy surface. The results are interpreted to investigate the mechanism of the rotational energy transfer process. The cross-sections are found to depend linearly on the torque, range of the potential, and the collision time. Depending on the variation in the location of classical turning point with change in energy, the cross-sections may increase or decrease with energy or cross-section versus energy curve may exhibit maxima or minima.
Źródło:
Acta Physica Polonica A; 1993, 84, 2; 247-252
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
X-Ray Topographic Investigation of Cellular Structure and its Relation to another Defects in Various Types of GaAs Single-Crystals
Autorzy:
Wierzchowski, W.
Mazur, K.
Powiązania:
https://bibliotekanauki.pl/articles/1929756.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
The defect patterns in GaAs crystal grown using liquid encapsulated Czochralski and gradient freeze methods with various types of doping were characterized using complementary X-ray topographic methods. It was found that the cellular structure occurring in the low doped crystal is developed independently from the actual growth surface. The occurrence of the cellular structure is connected with significant lattice deformation, and some results point that significant stress can influence its formation. The high doping prevents formation of the cellular structure, but at higher doping the phenomenon of "cellular growth" can occur due to instabilities of the growth surface. The present results point that defect pattern in GaAs crystals is more affected by the type of doping than by the choice of the growth method.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 789-794
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High-Temperature X-ray Diffraction Studies of Lattice Dynamics in Ni$\text{}_{3}$(Fe,Nb) Ordered Alloys
Autorzy:
Mekhrabov, A. O.
Powiązania:
https://bibliotekanauki.pl/articles/1930628.pdf
Data publikacji:
1994-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
Opis:
A study is performed on characteristics of lattice dynamics in the initially ordered ternary Ni$\text{}_{3}$(Fe$\text{}_{1-x}$Nb$\text{}_{x}$) (x = O to 10 at.%) alloys using high temperature X-ray diffractometry for the temperature range from 300 K to 1300 K. Aspects investigated included temperature and concentration dependencies of the full mean square atomic displacements Ū²$\text{}_{f}$, the Debye characteristic temperature Θ$\text{}_{D}$, and linear thermal expansion coefficient α. It is found that the Ū²$\text{}_{f}$, Θ$\text{}_{D}$, and α parameters show anomalous change at temperatures where the alloys are subjected to order-disorder phase transitions. It is further found that Nb addition results in the considerable increase in the parameters Ū²$\text{}_{f}$ and α and decrease in Θ$\text{}_{D}$. Moreover, the addition of Nb stabilizes Ni$\text{}_{3}$Fe ordered structure and shifts the order-disorder transition to higher temperature.
Źródło:
Acta Physica Polonica A; 1994, 85, 3; 571-578
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 580

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