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Wyświetlanie 1-15 z 17
Tytuł:
Influence of Temperature and Illumination on the Electrical Characteristics of Nanocrystalline $Cu_2S$ Based Heterojunctions for Photodetector Application
Autorzy:
Soliman, H.
Farag, A.
Saadeldin, M.
Sawaby, K.
Powiązania:
https://bibliotekanauki.pl/articles/1400523.pdf
Data publikacji:
2015-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
In this work, heterojunctions of $Cu_2S//p-Si$ were prepared by high vacuum thermal evaporation technique and examined as a photodetector structure. The dark current-voltage (I-V) characteristics of the heterojunctions measured at different temperatures ranging from 303 to 373 K were investigated. The predominant conduction mechanisms, series resistance, ideality factor and potential barrier height were determined. The downward curvature at sufficiently large voltages in the I-V characteristics is caused by the effect of series resistance $R_{s}$. The ideality factor obtained from I-V characteristics is larger than unity which can be attributed to the presence of a thin interfacial insulator layer between the metal and semiconductor. The photocurrent properties of the device under reverse bias using various illuminations were also explored for checking the validity of photodetector application of the studied device. The responsivity of light for the device under reverse bias confirms that the $Cu_2S//p-Si$ heterojunctions are valid for photodetector application. Moreover, these results suggest that the fabricated diode can be used for optical sensor applications. The capacitance-voltage characteristics of diode were also investigated at high frequency of 1 MHz.
Źródło:
Acta Physica Polonica A; 2015, 127, 6; 1688-1693
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stability of Diodes with Poly(3-hexylthiophene) and Polyazomethines Thin Organic Layer
Autorzy:
Bednarski, H.
Gąsiorowski, J.
Domański, M.
Hajduk, B.
Jurusik, J.
Jarząbek, B.
Weszka, J.
Powiązania:
https://bibliotekanauki.pl/articles/1409596.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
Herein we report results of studies on stability of diodes based on organic semiconductors such as poly (3-hexylthiophene) (P3HT) and soluble derivative of polyazomethine poly(1,4-(2,5-bisoctyloxy phenylenemethylidynenitrilo)-1,4-phenylenenitrilomethylidyne), (BOO-PPI). Both polymers were deposited on glass/ITO substrate with or without covering with blocking layer: poly(3,4-ethylenedioxythiophene):poly(4-styrene sulfonate) (PEDOT:PSS) and finished with Al back electrode. Prepared devices were studied by monitoring their electrical conductivity under nitrogen atmosphere and ambient air conditions. Under nitrogen atmosphere a marked influence of presence of the blocking layer on the diodes electrical conductivity was revealed. The P3HT diodes prepared without PEDOT:PSS thin film shown quick degradation, whereas presence of these layers stabilizes electrical conductivity in these devices. Inversely, the PPI based diodes without the PEDOT:PSS revealed stable conducting properties, while corresponding diodes with PEDOT:PSS layer showed degradation traces of their conducting properties.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1083-1086
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Characteristics of Metal/p-type CdTe Schottky Contacts
Autorzy:
Szatkowski, J.
Sierański, K.
Kasprzak, J. F.
Powiązania:
https://bibliotekanauki.pl/articles/1879831.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.Ey
73.40.Ei
Opis:
The Schottky barrier height of Al, Mg and Ag on chemically prepared p-type surface were measured with I-V techniques. The barrier heights were found to be independent of metal used, and equal to 0.73 ± 0.02 eV.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 175-178
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrical Properties of Au/n-GaAs$\text{}_{1-x}$Sb$\text{}_{x}$ Contacts
Autorzy:
Szatkowski, J.
Kasprzak, J. F.
Płaczek-Popko, E.
Radojewska, E. B.
Powiązania:
https://bibliotekanauki.pl/articles/1879840.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
72.80.Ey
Opis:
The Schottky barrier heights of Au on n-type GaAs$\text{}_{1-x}$Sb$\text{}_{x}$ were measured with I-V, C-V, and photoresponse (PR) techniques. The barrier height was determined to be 0.65, 0.75 and 0.7 eV, respectively.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 179-182
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acoustic Spectra of Ultrasound Induced Cavitations in Insulating Oils
Autorzy:
Szmechta, M.
Zmarzły, D.
Boczar, T.
Lorenc, M.
Powiązania:
https://bibliotekanauki.pl/articles/1811563.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.35.Ei
43.40.Le
Opis:
Acoustic emission measurement results of acoustically induced cavitation bubbles in insulating oil are presented in this paper. Spectral analysis of acquired by a broadband transducer acoustic emission signals is proposed as a diagnostic tool for estimation of aging properties of mineral insulating oils. The article describes the main parts of the designed and built measurement apparatus used for acoustic cavitation investigation in insulating oils. In this note representative results of the experimental data taken from the apparatus are shown.
Źródło:
Acta Physica Polonica A; 2008, 114, 6A; A-231-A-238
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Single-Crystal Growth of f-Electron Intermetallics in a Tetra-Arc Czochralski Furnace
Autorzy:
Szlawska, M.
Kaczorowski, D.
Powiązania:
https://bibliotekanauki.pl/articles/1399475.pdf
Data publikacji:
2013-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.60.Ei
75.30.Gw
Opis:
The Czochralski technique has induced technological revolution in the electronic industry. It has also been widely used in the fundamental research area, as it allows obtaining high-quality single crystals of large variety of binary, ternary and multinary compounds. The unique tetra-arc Czochralski furnace installed at the Institute of Low Temperature and Structure Research, Polish Academy of Sciences in Wrocław, described in detail in the article, has been used to prepare a large number of single crystals of various Ce- and U-based intermetallic phases. Their excellent quality has facilitated advanced investigations of their anisotropic, often highly unusual physical properties.
Źródło:
Acta Physica Polonica A; 2013, 124, 2; 336-339
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of Transport Properties of Single Layer Devices Based on the Polyazomethine Thin Films
Autorzy:
Weszka, J.
Domański, M.
Jurusik, J.
Hajduk, B.
Chwastek, M.
Bednarski, H.
Powiązania:
https://bibliotekanauki.pl/articles/1492961.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.50.Pz
Opis:
This work reports results of studies on transport properties of single-layer devices based on polyazomethine thin films with different metal electrodes. Recorded I-V characteristics of Au-PPI-Au and Au-PPI-Al structures were analyzed in detail. It appears that I-V characteristics of Au-PPI-Au structures are consistent with the Mott-Gurney law with the mobility value of $2× 10^{-6} cm^2$/(V s). Relatively low current in Au-PPI-Al devices is attributed to high value of the Schottky barrier and/or due to low density of longer conjugated segments in polyazomethine thin films.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 936-938
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Effect of Surface Preparation on Physical Properties of Ni-ZnSe Junctions
Autorzy:
Chusnutdinow, S.
Makhniy, V.
Aleszkiewicz, M.
Zaleszczyk, W.
Slotov, M.
Powiązania:
https://bibliotekanauki.pl/articles/1375723.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.60.Dw
78.55.Cr
73.40.Ei
Opis:
We report on optical and photovoltaic properties of Ni-ZnSe junctions. We demonstrate that the preparation method of the ZnSe surface determines luminescence, optical transmission of ZnSe substrates and photovoltaic spectra of the Ni-ZnSe junctions. The observed effects are explained by formation of low-dimensional quantum structures on the ZnSe surface in result of the surface preparation procedure. This is confirmed by atomic force microscopy studies, which show the presence of grains with lateral dimensions of 30-300 nm on ZnSe surface. The smallest grains are responsible for a wide spectral band observed in photoluminescence at 3.4 eV, i.e., at much higher energies than the energy gap of bulk ZnSe, $E_{g}$ ≈ 2.7 eV.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1076-1078
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tool Steels: Forging Simulation and Microstructure Evolution of Large Scale Ingot
Autorzy:
Mengaroni, S.
Cianetti, F.
Calderini, M.
Evangelista, E.
Di Schino, A.
McQueen, H.
Powiązania:
https://bibliotekanauki.pl/articles/1402102.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.60.Ei
61.05.J-
81.05.Bx
Opis:
The aim of this paper is to analyze the hot working behavior of two different steels based on 3% and 5% Cr steel chemistry, respectively. Hot deformation is studied by hot torsion tests in the range of temperatures 1000-1200°C and strain rates 0.01, 0.10, 1.00 $s^{-1}$. At given temperatures and strain rates flow curves exhibit a peak followed by a decline towards a steady state which is indicative of dynamic recrystallization. At constant strain, flow stress increases with increasing strain rate and decreasing temperature. The analysis of the constitutive equation relating peak flow stress, strain rate and temperature shows high activation energy values for both steels. Recrystallized volume fraction of steels after hot deformation is estimated based on the grain orientation spread as measured by electron backscattered diffraction technique, on the hot deformed and quenched materials.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 629-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rectification in Fullerene (C$\text{}_{60}$)-Phthalocyanine Thin Film Sandwich Structures
Autorzy:
Anderson, T.
Akselrod, L.
Fischer, C. M.
Roth, S.
Powiązania:
https://bibliotekanauki.pl/articles/1933395.pdf
Data publikacji:
1995-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Ei
73.61.Ph
73.40.-c
Opis:
Bilayer sandwich structures were fabricated by the sequential thermal evaporation of gold, copper phthalocyanine (CuPc), C$\text{}_{60}$ and gold onto sapphire substrates. When the current-voltage characteristics of a freshly made device are measured in an atmosphere of argon, fairly strong rectification is observed. When the bilayer device is exposed to ammonia vapor, the rectification slowly decreases and almost disappears. If the device is then placed under vacuum and the ammonia removed, the initial conditions slowly return. We attribute the rectification to the formation of a p-n junction.
Źródło:
Acta Physica Polonica A; 1995, 87, 4-5; 877-880
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Properties of Sonochemically Prepared $CuIn_{x}Ga_{1-x}S_{2}$ and $CuIn_{x}Ga_{1-x}Se_{2}$
Autorzy:
Jesionek, M.
Nowak, M.
Szperlich, P.
Kępińska, M.
Mistewicz, K.
Toroń, B.
Stróż, D.
Szala, J.
Rzychoń, T.
Powiązania:
https://bibliotekanauki.pl/articles/1376056.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.35.Ei
72.20.Jv
72.40.+w
81.07.Bc
Opis:
Nanoparticles of chalcopyrites copper indium gallium sulfide ($CuIn_{x}Ga_{1-x}S_{2}$ or CIGS) and copper indium gallium selenide ($CuIn_{x}Ga_{1-x}Se_{2}$ or CIGSe) were fabricated sonochemically. They were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, high resolution transmission electron microscopy, selected area electron diffraction, and diffuse reflectance spectroscopy. The electrical and photoelectrical properties of the fabricated nanomaterials were investigated.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1107-1109
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Comparison of Pressure and Intensity Methods in Evaluating the Directional Diffusion Coefficient
Autorzy:
Pilch, A.
Kamisiński, T.
Zastawnik, M.
Powiązania:
https://bibliotekanauki.pl/articles/1400088.pdf
Data publikacji:
2013-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
43.55.-n
43.55.Ka
43.55.Mc
43.20.Ei
Opis:
The directional diffusion coefficient characterizes directional uniformity of acoustic energy reflected from a structure. The goal of the paper is to check whether different measurement methods of that coefficient give comparable results and can be used for different diffusing structures. ISO 17497-2:2012 recommends two basic measurement methods for this parameter, both based on sound pressure analysis. In the first method, one microphone and a measurement manipulator is used (the space method), while in the second one, 19 microphones placed on the sound-reflecting plane are required (the boundary method). In the standard it is assumed (as usually in the room acoustics), that the acoustic energy is proportional to the square of sound pressure, what is true only for the plane wave. Correctness of this assumption was checked by the modified space method where the sound intensity probe was installed instead of microphone. The test revealed that pressure methods gave comparable results for both low- and high-diffusion structures, with the boundary method giving moderately higher values for low-diffusion structures and slightly higher for high-diffusion structures. The results obtained in the intensity method were comparable with the pressure method except for the 2000 Hz frequency range.
Źródło:
Acta Physica Polonica A; 2013, 123, 6; 1054-1058
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fabrication and Study of the Organic-Inorganic Semiconductor Diodes Formed on n-Si
Autorzy:
Vengalis, B.
Šliužienė, K.
Lisauskas, V.
Grigaliūnaitė-Vonsevičienė, G.
Butkutė, R.
Lygaitis, R.
Gražulevičius, J.
Powiązania:
https://bibliotekanauki.pl/articles/1506270.pdf
Data publikacji:
2011-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.61.Ph
73.40.Lq
73.40.Ei
73.40.Ns
Opis:
We report fabrication and electrical characterization of the organic-inorganic semiconductor diode structures formed by evaporating thin films of three novel low molecular mass organic compounds on n-type Si substrates. The organic compounds containing carbazole and triphenylamine structural units, namely: 9,9'-bis(4-butylphenyl)-3,3'-bicarbazolyl (BPBC), 4-(1H-perimidin-2-yl)-N,N-diphenylbenzenamine (PER) and 9,9'-diethyl-3,3'-bicarbazolyl (EBC) have been synthesized. The current-voltage characteristics of the Au/(BPBC, EBC, PER)/n-Si diode structures measured at T = 295 K revealed rectifying behavior with a potential barrier height values of 0.71 eV, 0.73 eV, 0.76 eV, respectively.
Źródło:
Acta Physica Polonica A; 2011, 119, 2; 262-264
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hydrogen Sensors Made on InP or GaN with Electrophoretically Deposited Pd or Pt Nanoparticles
Autorzy:
Zdansky, K.
Cernohorsky, O.
Yatskiv, R.
Powiązania:
https://bibliotekanauki.pl/articles/1418961.pdf
Data publikacji:
2012-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
82.45.Qr
81.16.Hc
73.61.Ey
73.40.Kp
73.40.Ei
Opis:
High quality Schottky diodes were prepared by printing colloidal graphite on the polished wafers of n-type InP or n-type GaN. The wafers were earlier sparsely covered with palladium or platinum nanoparticles by electrophoresis from prepared colloid solutions in isooctane. Deposited contacts and nanoparticles were observed by scanning electron mictroscopy. Current voltage characteristics of the Schottky diodes showed high rectification ratios and the barrier heights close to the value of vacuum-level-alignment of the Schottky-Mott limit. The sensitivity to hydrogen of the diodes was measured in the flow of hydrogen/nitrogen mixtures of various hydrogen concentrations in the range from 1 ppm to 1000 ppm. The estimated detection limits of the diodes were in the sub-ppm range. The diodes represent orders-of-magnitude improvement over the best hydrogen sensors reported previously.
Źródło:
Acta Physica Polonica A; 2012, 122, 3; 572-575
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
THz Reflection Spectra of Different Materials, Including Explosives, Measured at a Distance up to 5 m
Autorzy:
Walczakowski, M.
Palka, N.
Czerwiński, A.
Sypek, M.
Szustakowski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1398672.pdf
Data publikacji:
2015-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
06.60.Ei
07.57.Hm
07.57.Kp
07.57.Pt
33.20.Ea
Opis:
This work presents a terahertz system designed for the reflection spectroscopy of different materials located at a distance up to 5 m. The source of the radiation is a tunable solid-state optical parametric oscillator, which generates a narrow-band nanosecond pulses in the range of 0.7-2.5 THz. The signal is detected with relatively fast and having big sensitivity hot electron bolometer. The detailed description of each device and the functioning of the experimental setup are provided as well as the methodology of the measurement is explained. Investigations were performed in the 0.7-2.2 THz range in free space with relative humidity of about 40%. The experiment was divided into three series, each of which was carried out with different distance between the examined sample and the system - 1 m, 3 m, and 5 m. Obtained spectra of selected materials, including explosives, are similar to the results received from a purged time domain spectroscopy system. The observed small deviations are connected with fluctuations of the laser wavelength and the instability of the bolometer.
Źródło:
Acta Physica Polonica A; 2015, 127, 3; 689-692
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 17

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