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Wyświetlanie 1-15 z 31
Tytuł:
Field Emission Study of Germanium Thin Films on a Niobium Surface
Autorzy:
Bakhtizin, R.Ζ.
Suvorov, A.L
Zaripov, R.F.
Powiązania:
https://bibliotekanauki.pl/articles/1892517.pdf
Data publikacji:
1992-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.50.Ge
Opis:
The behaviour of germanium on atomically clean niobium single crystal planes has been studied by probe-hole field emission microscopy as well as by means of the spectral analysis of field emission current fluctuations. Variations of average work function, surface diffusion activation energies, and slopes of the spectral density function with different coverages and substrate temperatures are measured.
Źródło:
Acta Physica Polonica A; 1992, 81, 2; 247-255
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Energy States of Ni in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se:Ni Solid Solutions
Autorzy:
Permogorov, S. A.
Tenishev, L. N.
Sokolov, V. I.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1921612.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
78.50.Ge
Opis:
Absorption and reflectivity measurements were carried out on Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se:Ni solid solutions. The spectra demonstrate the radical change of the structure of internal Ni$\text{}^{2+}$(3d$\text{}^{8}$) transitions at the presence of the Mn ions and strong dependence on Mn concentration. The threshold energy ħω$\text{}_{th}$ for the process of Ni photoionization to the valence band Ni$\text{}^{2+}$(3d$\text{}^{8}$) + ħω$\text{}_{th}$ → Ni$\text{}^{1+}$(3d$\text{}^{9}$) + h is shifted to the lower energy by 30 meV, but hardly depends on x despite the essential increase in the energy gap.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 705-708
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interaction of Excitons Bound to 3d Transition Metal Ions with Lattice Vibrations in II-VI Semiconductors
Autorzy:
Sokolov, V. I.
Surkova, T. P.
Powiązania:
https://bibliotekanauki.pl/articles/1879516.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.20.Wc
78.50.Ge
Opis:
The analysis of an interaction of bound excitons with lattice vibrations for ZnO:Ni and ZnO:Cu is given on the basis of symmetry consideration.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 155-157
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Infrared Absorption Study of Thermally Generated Shallow Donor Centers in Czochralski Silicon
Autorzy:
Kaczor, P.
Kopalko, K.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1921588.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
A comparative study of thermally generated donor centers in boron and aluminum doped Czochralski silicon was performed by means of Fourier transform infrared technique. A detailed study revealed presence of donor centers belonging to the well-known series of thermal donors and shallow thermal donors. For both types of material the same centers could be observed while considerable differences in their generation kinetics occurred. In addition to the previously identified species also new ones could be observed. One of them, with single ionization level at approximately 39.5 meV, was found to exhibit clear dependence of its concentration upon illumination of the sample during cooling from room temperature to liquid He temperature.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 677-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Acceptor-Like Level of the EL2 Defect in its Metastable Configuration
Autorzy:
Dreszer, P.
Baj, M.
Babiński, A.
Powiązania:
https://bibliotekanauki.pl/articles/1879457.pdf
Data publikacji:
1991-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
This paper presents for the first time the evident experimental confirmation that EL2 defect, while being in its metastable configuration, traps under hydrostatic pressure an additional electron, i.e. the acceptor-like (EL2*)$\text{}^{0}$ $\text{}^{/}$ $\text{}^{-}$ level enters the energy gap under pressure. We propose that in n-GaAs the EL2 thermal recovery takes always place via the (EL2*)$\text{}^{-}$ state.
Źródło:
Acta Physica Polonica A; 1991, 79, 1; 129-132
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermal Donor Generation in Boron- and Aluminium-Doped Czochralski Silicon
Autorzy:
Kopalko, K.
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1890843.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
Generation of thermal donor centres in oxygen-rich silicon doped with boron and aluminium acceptors has been studied with the FTIR technique. It has been found that upon annealing 470°C two kinds of absorption series were generated. One of them belonged to the well-known first ionization level of silicon thermal (double) donors (TD's): TD°/TD$\text{}^{+}$ . The second series was identified with the so-called shallow thermal donors (STD's). The generation kinetics of the two series was followed for both kinds of acceptor doping and significant differences has been found. The results of the FTIR investigations were further compared with the magnetic resonance findings allowing for their mutual correlation and more general conclusions.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 345-348
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bistable Behaviour of the New Shallow Thermal Donor in Aluminum Doped Silicon
Autorzy:
Kaczor, P.
Godlewski, M.
Gregorkiewicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/1929652.pdf
Data publikacji:
1993-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Ht
78.50.Ge
Opis:
In the present study a new bistable shallow thermal donor in aluminum doped silicon was investigated by means of the Fourier transform infrared spectroscopy. The temperature dependence of the photo-conversion into the metastable state was established and some Hints for the origin of the metastability were given.
Źródło:
Acta Physica Polonica A; 1993, 84, 3; 555-558
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Induced Recovery of EL2 Defect from the Metastable Configuration
Autorzy:
Teisseyre, H.
Kuszko, W.
Powiązania:
https://bibliotekanauki.pl/articles/1879968.pdf
Data publikacji:
1991-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
The measurements: of changes in a magnitude of ΕL2 characteristic infrared absorption were used to investigate a phenomenon of light induced recovery of the defect from its metastable state in semi-insulating (SI) and n-type GaAs. At a temperature of 12K illumination with photons of energy 1.45 eV caused partial recovery for both SI and n-type samples. For n-type samples partial recovery occurred also after irradiation with photons of energy lower than 0.73 eV.
Źródło:
Acta Physica Polonica A; 1991, 79, 2-3; 267-270
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Pressure Far-Infrared Magnetooptical Studies of Sn and S Donors in GaAs
Autorzy:
Dmochowski, J. E.
Wang, P. D.
Stradling, R. A.
Powiązania:
https://bibliotekanauki.pl/articles/1888152.pdf
Data publikacji:
1991-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
Opis:
The diamond anvil cell technique is applied for magneto-optical far-infrared transmission experiments with LPE grown GaAs:Sn. The 1s-2p(+) intra-shallow-Γ-donor transition is investigated as a function of high hydrostatic pressure for Sn and residual S donors. Both donors are shallow up to 30 kbar. Above this pressure both donors become deep and shallow donor absorption is persistently bleached due to deep non-metastable (non DX-like) states of the donors entering the gap of GaAs.
Źródło:
Acta Physica Polonica A; 1991, 80, 2; 279-282
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Some New Aspects of Porous Silicon
Autorzy:
Fishman, G.
Romestain, R.
Powiązania:
https://bibliotekanauki.pl/articles/1872323.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.50.Ge
78.55.Hx
78.60.Fi
Opis:
We recall the geometry of porous silicon and the order of magnitude of some characteristic parameters. We give a brief review of optical experiments and their different interpretations. We focus on quantitative interpretations and show that an essential concept is confinement in a quantum wire or box. In particular, the exchange energy of electron-hole pairs correlated by Coulomb interaction inside a quantum box explains results obtained between 4 I{ and room temperature. Nevertheless, the large shift of the main luminescence line for similar porous silicon but different electrolytes cannot be explained by quantum confinement alone and has to be accounted for by the difference between the dielectric constants inside and outside the porous silicon. A brief account of electroluminescence experiments is also given.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 285-293
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Induced Ordering of the EL2 Defects in the Metastable State
Autorzy:
Trautman, P.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1929711.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.50.Ge
78.20.Hp
Opis:
We tried to detect a strain in the crystal induced by the ordering of the EL2 defects in the metastable state by measuring linear dichroism and birefringence. We found that this strain is below the detection limit of our experiments and lower than that induced by 1 MPa of external stress. The observed dependence of orientation of the EL2 defects in the metastable state on the polarization of light used to transform EL2 to the metastable state is consistent with the attribution of the metastability of EL2 to the transformation of the isolated As$\text{}_{Ga}$ to the V$\text{}_{Ga}$A$\text{}_{Si}$ defect and is in conflict with the As$\text{}_{Ga}$-A$\text{}_{Si}$ defect pair model of EL2.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 677-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Symmetry of the EL2 Defect in the Metastable State
Autorzy:
Trautman, P.
Baranowski, J. M.
Powiązania:
https://bibliotekanauki.pl/articles/1920969.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
78.20.Hp
78.50.Ge
Opis:
We measured recovery of the optical absorption of EL2 under [100] and [111] uniaxial stress during heating of the crystal. The recovery step, occurring at about 45 K in n-type GaAs, splits into two components under [111] stress, and no splitting is observed under [100] stress. The same behavior under uniaxial stress shows the recovery occurring at 125 K in semi-insulating GaAs. A fraction of centers recovering at lower temperature can be altered by excitation of metastability with polarized light or by excitation under stress. These results indicate that EL2 in the metastable state is trigonally distorted from the tetrahedral symmetry of the ground state.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 609-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetotransmission Measurements of Intra-Shallow-Donor Transitions in Semi-Insulating GaAs
Autorzy:
Karpierz, K.
Kożuchowski, K.
Grynberg, M.
Powiązania:
https://bibliotekanauki.pl/articles/1920976.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.40.+w
78.20.Ls
78.50.Ge
Opis:
In this paper we present the results of an investigation of the 1s-2p$\text{}_{+}$ intra-shallow-donor transition by means of an extremely difficult magnetotransmission experiment performed on semi-insulating GaAs. We report the temperature dependence of the transition intensity. We noticed the absence in the absorbance spectra of a well-pronounced structure which is observed at low magnetic fields in photoconductivity measurements. The results are discussed in terms of a fluctuating potential from ionized centres in semi-insulating GaAs.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 617-619
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
Autorzy:
Teisseyre, H.
Perlin, P.
Leszczyński, M.
Suski, T.
Dmowski, L.
Grzegory, I.
Porowski, S.
Jun, J.
Moustakas, T. D.
Powiązania:
https://bibliotekanauki.pl/articles/1873040.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
78.50.Ge
78.66.Fd
Opis:
Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 403-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Rare Earth Centres in Mixed Compound Crystals
Autorzy:
Kozanecki, A.
Powiązania:
https://bibliotekanauki.pl/articles/1945470.pdf
Data publikacji:
1996-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
78.55.-m
78.50.Ge
Opis:
A review of the Yb impurity related centres in mixed InP-based crystals has been presented. It is shown that Yb$\text{}^{3+}$ ions can be utilized to probe alloy disorder, both in cationic (GaInP) and anionic (InPAs) alloys. The existence of alloy disorder manifested itself in the photoluminescence spectra reflecting local atomic structure of the Yb centres. The dominant emissions have been ascribed to the Yb-P$\text{}_{4}$Ga$\text{}_{12}$ and Yb-P$\text{}_{4}$-Ga$\text{}_{11}$In complexes in GaInP and to Yb-P$\text{}_{4}$ and Yb-P$\text{}_{3}$As centres in InPAs. The excitation and relaxation mechanisms of the 4f-shell of Yb$\text{}^{3+}$ ions were also investigated. It was found that the temperature quenching of the Yb$\text{}^{3+}$ luminescence was accompanied with the appearance of two thermally activated photoluminescence bands. It is suggested that photoluminescence at an energy of 25 meV below the energy gap is due to recombination of excitons bound at Yb-related centres. Relaxation of the excited 4f-shell of Yb$\text{}^{3+}$ ions proceeds via back transfer of the excitation energy from the 4f-shell to excitons bound at Yb-centres.
Źródło:
Acta Physica Polonica A; 1996, 90, 1; 73-82
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 31

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