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    Wyświetlanie 1-7 z 7
    Tytuł:
    Development of a 20 kJ Sparker for High Resolution Ocean Seismic Survey
    Autorzy:
    Sun, Y.
    Gao, Y.
    Yan, P.
    Wang, J.
    Yuan, W.
    Wu, H.
    Wang, Y.
    Wan, P.
    Zhao, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807914.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.80.Wq
    43.30.+m
    Opis:
    An ocean sparker with a stored energy of 20 kJ was developed for high resolution ocean seismic survey. The sparker is mainly composed of a high voltage high frequency charging supply, energy storage capacitors, a discharging switch and discharging electrodes. The H-bridge inverter and series resonant mode were adopted in the charging supply, and a dry high voltage transformer was used to improve the safety and maintenance, the average charging rate exceeded 4 kJ/s. An optical fiber connected between the high voltage system and the control system was used to isolate high voltage and transmit the high voltage signal. The high voltage electrodes of the discharging electrodes consisted of several hundreds of electrodes. The experimental results show that the sparker can be operated at repetition rates of 12 shots/min, and can meet the expected design requirements. Further field tests will be done in the near future.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 1059-1061
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Improved Nucleation and Transition by Plasma Treatments for Fast Response Optically-Compensated-Bend Displays
    Autorzy:
    Wu, G.
    Huang, C.
    Chien, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400462.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    52.77.-j
    81.65.-b
    42.79.Kr
    64.60.Q-
    Opis:
    The optically-compensated-bend mode pi-cell displays exhibit fast-response time and wide-viewing angle characteristics. However, it requires a transition of the liquid crystal molecule from an initial splay state to the bend state configuration before providing the quick operation. A high voltage and a long warm-up time are needed to transform to the bend state. In this paper, the polyimide alignment films have been modified to reduce the splay-to-bend transition time by plasma beam treatments. The proposed method was demonstrated to be highly effective in improving the overall transition time. The number of splay-to-bend nucleation sites in the assembled liquid crystal cells could be increased dramatically by up to 20 times at the initial stage, and the improvement in the cell warm-up time was achieved at 45-71% reduction at 5.5 V. The plasma processing parameters were optimized at the plasma power of 700 W, the plasma distance of 25 mm, and the plasma scan speed of 600 mm/s. In addition, we maintained the excellent optical properties and response time characteristics for the optically-compensated-bend mode liquid crystal displays.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 892-895
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Theoretical Studies of the Spin Hamiltonian Parameters and Local Structures for the Two Tetragonal $Cu^{2+}$ Centers in $Ca(OH)_2$
    Autorzy:
    Zhang, H.
    Wu, S.
    Zhang, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1493658.pdf
    Data publikacji:
    2011-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.Fc
    Opis:
    The spin Hamiltonian parameters (g factors $g_{∥ },$ $g_{⊥}$ and the hyperfine structure constants $A_{∥ },$ $A_{⊥}$) and the local structures for the two tetragonal $Cu^{2+}$ centers I and II in $Ca(OH)_2$ are theoretically studied from the perturbation formulae of these parameters for a $3d^9$ ion under tetragonally elongated octahedra. The $[Cu(OH)_6]^{4-}$ clusters on the substitutional $Ca^{2+}$ site are found to suffer the relative elongations by about 0.083 Å and 0.065 Å for centers I and II, respectively, along the $C_4$ axis due to the Jahn-Teller effect. The above tetragonal elongations may entirely depress the original trigonal distortion of the host $Ca^{2+}$ site in $Ca(OH)_2$. The calculated spin Hamiltonian parameters based on the above Jahn-Teller elongations show good agreement with the experimental results. The EPR spectra and the local structures for the two centers are compared with one another.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 3; 507-511
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Aluminum-Doped Zinc Oxide Thin Films Prepared by Sol-Gel and~RF Magnetron Sputtering
    Autorzy:
    Wu, G.
    Chen, Y.
    Lu, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504062.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.15.Cd
    82.70.Gg
    77.55.hf
    Opis:
    Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. In this paper, aluminum-doped zinc oxide thin films have been prepared on glass substrates using a sol-gel route and the radio-frequency magnetron sputtering process. The stoichiometry could be easily adjusted by controlling the nanosized precursor concentration and the thickness by dip-coating cycles. On the other hand, the mixed $N_2O//Ar$ plasma gas provided adequate N doping for the RF sputtering process. The results showed the low electrical resistivity of 21.5 Ω cm with the carrier concentration of - 3.21 × $10^{18} cm^{-3}$ for the n-type aluminium-doped zinc oxide film. They were 34.2 Ω cm and + 9.68 × $10^{16} cm^{-3}$ for the p-type aluminium-doped zinc oxide film. The optical transmittance has been as high as 85-90% in the 400-900 nm wavelength range. The aluminium-doped zinc oxide (2 at.% Al) films exhibited the hexagonal wurzite structure with (002) preferred crystal orientation. The electrical characteristics were depicted by the gradual increase in N and NO that occupy the oxygen vacancies.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 149-152
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Advanced Characterization of Material Properties on the Nanometer Scale Using Atomic Force Microscopy
    Autorzy:
    Fenner, M.
    Wu, S.
    Yu, J.
    Huber, H.
    Kienberger, F.
    Powiązania:
    https://bibliotekanauki.pl/articles/1490089.pdf
    Data publikacji:
    2012-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    77.55.-g
    07.79.-v
    68.37.Ps
    68.37.Uv
    07.57.Pt
    Opis:
    We report recent advances in material characterization on the nanometer scale using scanning microwave microscopy. This combines atomic force microscopy and a vector network analyzer using microwave tip sample interaction to characterize dielectric and electronic material properties on the nanometer scale. We present the methods for calibration as well as applications. Scanning microwave microscopy features calibrated measurements of: (1) capacitance with attofarad sensitivity. For calibration a well characterized array of capacitors (0.1 fF to 10 fF) is used. The method is applied to determine the dielectric properties of thin organic films, (2) Semiconductor dopant density. Calibration is performed by imaging the cross-section of a standard sample with differently doped layers (dopant stair case) from $10^{16}$ atoms/$cm^3$ to $10^{20}$ atoms/$cm^3$.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 2; 416-419
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigations on the EPR Parameters of $KMgF_3$:$Cr^{+}$
    Autorzy:
    Kuang, M.
    Wu, S.
    Hu, X.
    Li, G.
    Zu, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365348.pdf
    Data publikacji:
    2014-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.10.Dg
    76.30.Fc
    Opis:
    The electron paramagnetic resonance parameters (i.e., g factor, hyperfine structure constant and superhyperfine parameters) of $KMgF_3$:$Cr^{+}$ are theoretically investigated from the perturbation formulae of these parameters for an octahedral $3 d^5$ cluster. As for the calculations of g factor and hyperfine structure constant, both the contributions from the crystal-field and charge transfer mechanisms are included based on the cluster approach. The metal to ligand charge transfer contribution to the g-shift Δg ( ≈ g-2.0023) is the same (negative) in sign and much larger in magnitude as compared to the crystal-field one. The conventional argument that the charge transfer contributions to zero-field splittings are negligible for $3 d^5$ ions in fluorides is no longer suitable for Δg analysis of $KMgF_3$:$Cr^{+}$ due to the dominant second-order charge transfer perturbation term. The charge transfer contribution to hyperfine structure constant exhibits the same sign and about 4% of the crystal-field one. The unpaired spin densities of the fluorine 2s, 2pσ and 2pπ orbitals are quantitatively acquired from the relationships with the relevant molecular orbital coefficients using the uniform model. The present treatments are superior to the previous calculations of directly fitting the experimental superhyperfine parameters.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 5; 1224-1228
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Signature of Hot Phonons in Reliability of Nitride Transistors and Signal Delay
    Autorzy:
    Matulionis, A.
    Liberis, J.
    Matulionienė, I.
    Šermukšnis, E.
    Leach, J.
    Wu, M.
    Ni, X.
    Morkoç, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1506173.pdf
    Data publikacji:
    2011-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.70.+m
    73.50.Fq
    73.61.Ey
    Opis:
    Lifetime of non-equilibrium (hot) phonons in biased GaN heterostructures with two-dimensional electron gas channels was estimated from hot-electron fluctuations. Dependence of the lifetime on the electron density is not monotonous - the resonance-type fastest decay serves as a signature of hot phonons. The signature is resolved in nitride heterostructure field effect transistors when the gate voltage is used to change the channel electron density. The transistor cut-off frequency decreases on both sides of the resonance in agreement with the enhanced electron scattering caused by longer hot-phonon lifetimes. The signature is also noted in device reliability experiment: the enhanced temperature of hot phonons, possibly, triggers formation of new defects and accelerates device degradation.
    Źródło:
    Acta Physica Polonica A; 2011, 119, 2; 225-227
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-7 z 7

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