Autor: Weber, E. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: A New Type of Semi-Insulating Materials
Autorzy:: Leon, R. P.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1921578.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.80.Ey
Opis:: The introduction of Cu in InP at 700°C and higher temperatures results in both initially p-type and n-type InP become semi-insulating. It is also observed that thermally stable In-Cu rich precipitates form, that the concentration of deep levels is negligible and that InP:Cu samples exhibit inhomogeneities and anomalous transport behavior. The buried Schottky barrier model is the only model thus far studied which is consistent with these experimental observations. This model has general applicability, and its possible relevance to other semiconductors is examined. The conditions necessary for forming quasi-intrinsic semiconductors by metallic precipitation are discussed.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 664-669
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Deep Defects in Low-Temperature GaAs
Autorzy:: Korona, K. P.
Muszalski, J.
Kamińska, M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1923822.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.80.Ey
Opis:: Conductivity of GaAs layers grown by molecular beam epitaxy at low substrate temperature (190-200°C) and then annealed at few different temperatures (between 300 and 600°C) were studied. It was confirmed that electron transport is due to hopping between arsenic antisite defects. Parameters describing hopping conductivity and their dependence on temperature of annealing are discussed. Other deep defects with activation energies of 0.105, 0.30, 0.31, 0.47, 0.55 eV were found using photoinduced current transient spectroscopy measurements.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 821-824
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Electron Paramagnetic Resonance Study of Se-Doped AlSb: Evidence for Negative-U of the DX Center
Autorzy:: Stallinga, P.
Walukiewicz, W.
Weber, E.R.
Becla, P.
Lagowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1943839.pdf
Data publikacji:: 1995-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
76.30.Da
Opis:: A metastable electron paramagnetic resonance signal is observed in Se doped AlSb. After illumination a strong, persistent electron paramagnetic resonance signal with an isotropic g-factor of 1.949 is observed. The absence of any electron paramagnetic resonance when cooled in the dark is direct evidence for the negative-U model. The electron paramagnetic resonance arises from the effective-mass state of the defect, which is not filled at thermal equilibrium. An analysis of the lineshape reveals that the linewidth is determined by hyperfine interactions. The extend of the wave function is found to be comparable to the prediction for the effective-mass state.
Źródło:: Acta Physica Polonica A; 1995, 88, 5; 1043-1047
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: AlGaAs to GaAs Energy Transfer Mechanisms in AlGaAs/GaAs Structures
Autorzy:: Karpińska, K.
Godlewski, M.
Żytkiewicz, Z. R.
Chen, W. M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1921617.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.Jv
76.70.Hb
78.55.Cr
Opis:: The results of photoluminescence and optically detected cyclotron resonance experiments are presented for thick AlGaAs epilayers grown by liquid phase electroepitaxy method on GaAs:Cr substrate. These results indicate an efficient energy transfer from excited AlGaAs to GaAs.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 713-716
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 5.

Tytuł:: Optical and Electrical Measurements of Low-Temperature InAlAs
Autorzy:: Korona, K. P.
Wysmołek, A.
Bożek, R.
Kamińska, M.
Baranowski, J. M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1923833.pdf
Data publikacji:: 1992-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.Eq
73.60.Br
78.55.Cr
Opis:: Photoluminescence, photocurrent, thermally stimulated current and photoinduced current transient spectroscopy measurements done on molecular beam epitaxy In$\text{}_{0.52}$Al$\text{}_{0.48}$As layer, lattice matched to InP are reported. The investigated layers were grown on semi-insulating InP wafers, at temperature range from 215 to 450°C. It was found that the Fermi level was pinned to a dominant midgap center (most likely similar to EL2 center). Moreover, there were at least 7 other defects but with much smaller concentrations. Their activation energies were equal to 0.076, 0.11, 0.185, 0.295, 0.32 and 0.40 eV. The layers exhibited a very low luminescence and a small photocurrent.
Źródło:: Acta Physica Polonica A; 1992, 82, 5; 825-828
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 6.

Tytuł:: FFirst TSC and DLTS Measurements of Low Temperature GaAs
Autorzy:: Muszalski, J.
Babiński, A.
Korona, K. P.
Kamińska, E.
Piotrowska, A.
Kamińska, M.
Weber, E. R.
Powiązania:: https://bibliotekanauki.pl/articles/1891236.pdf
Data publikacji:: 1991-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.55.-i
72.80.Ey
Opis:: The first thermally stimulated current (TSC) and deep level transient spectroscopy (DLTS) studies performed on GaAs grown by molecular beam epitaxy (MBE) at low substrate temperatures (LT GaAs) are reported. TSC experiments, conducted on as grown and 400-580°C annealed layers showed domination of arsenic antisite (EL2-like) defect and supported its key role in hopping conductivity. DLTS studies, performed on Si doped and annealed at 800°C layers revealed substantially lower concentration of EL2-like defect and an electron trap of activation energy ΔE = 0.38 eV was found.
Źródło:: Acta Physica Polonica A; 1991, 80, 3; 413-416
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 7.

Tytuł:: Superconductivity in Indium Diffused GaAs
Autorzy:: Baranowski, J. M.
Wójcik, P.
Palczewska, M.
Jabłoński, R.
Weber, E. R.
Yau, W. P.
Sohn, H.
Werner, P.
Powiązania:: https://bibliotekanauki.pl/articles/1921582.pdf
Data publikacji:: 1992-10
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 74.70.Mq
76.20.+q
Opis:: Superconductivity of indium diffused GaAs was investigated. The superconductivity in these samples was identified by the magnetic susceptibility and the characteristic field modulated microwave absorption. The static magnetic susceptibility was measured from 40 K down to 2.5 K. The result shows two distinctive diamagnetic contributions within 7 K-2.5 K range. These diamagnetic contributions were correlated with the excess of In and Ga metal in GaAs.
Źródło:: Acta Physica Polonica A; 1992, 82, 4; 670-673
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 8.

Tytuł:: Diffraction Studies of Nanocrystals: Theory and Experiment
Autorzy:: Palosz, B.
Grzanka, E.
Gierlotka, S.
Stel'makh, S.
Pielaszek, R.
Bismayer, U.
Neuefeind, J.
Weber, H.-P.
Palosz, W.
Powiązania:: https://bibliotekanauki.pl/articles/2035453.pdf
Data publikacji:: 2002-07
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.46.+w
Opis:: Based on theoretical calculations of powder diffraction data it is shown that the assumption of the infinite crystal lattice for small particles is not justified, leads to significant changes of the diffraction patterns, and may lead to erroneous interpretation of the experimental results. An alternate evaluation of diffraction data of nanoparticles, based on the so-called "apparent lattice parameter", alp, is proposed.
Źródło:: Acta Physica Polonica A; 2002, 102, 1; 57-82
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 9.

Tytuł:: Interaction of Au with GaSb and its Impact on the Formation of Ohmic Contacts
Autorzy:: Piotrowska, A.
Kamińska, E.
Piotrowski, T.
Kasjaniuk, S.
Guziewicz, M.
Gierlotka, S.
Lin, X. W.
Liliental-Weber, Z.
Washburn, J.
Kwiatkowski, S.
Powiązania:: https://bibliotekanauki.pl/articles/1873078.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Ns
Opis:: Interfacial reactions between GaSb and Au were studied by Rutherford backscattering, X-ray diffraction, and cross-sectional transmission electron microscopy. Evaluation of the extent to which the GaSb substrate decomposes was of primary concern. The results give evidence that the reaction takes place even at temperatures as low as 180°C. High reactivity of gold towards GaSb revealed by this study demonstrates that Au-based metallization is not a good candidate for device quality ohmic contacts to GaSb-based devices.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 419-422
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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