Autor: Taube, M. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Low Resolution Structure of RAR1-GST-Tag Fusion Protein in Solution
Autorzy:: Taube, M.
Jarmołowski, A.
Kozak, M.
Powiązania:: https://bibliotekanauki.pl/articles/1538891.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cf
87.14.E-
87.14.et
Opis:: RAR1 is a protein required for resistance mediated by many R genes and function upstream of signaling pathways leading to $H_{2}O_{2}$ accumulation. The structure and conformation of RAR1-GST-Tag fusion protein from barley (Hordeum vulgare) in solution was studied by the small angle scattering of synchrotron radiation. It was found that the dimer of RAR1-GST-Tag protein is characterized in solution by radius of gyration $R_G$ = 6.19 nm and maximal intramolecular vector $D_{max}$ = 23 nm. On the basis of the small angle scattering of synchrotron radiation SAXS data two bead models obtained by ab initio modeling are proposed. Both models show elongated conformations. We also concluded that molecules of fusion protein form dimers in solution via interaction of GST domains.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 307-310
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: SAXS Study of Influence of Gemini Surfactant, 1,1-(1,4-butanediyl)bis 3-cyclododecyloxymethylimidazolium di-chloride, on the Fully Hydrated DMPC
Autorzy:: Pietralik, Z.
Taube, M.
Skrzypczak, A.
Kozak, M.
Powiązania:: https://bibliotekanauki.pl/articles/1538926.pdf
Data publikacji:: 2010-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.05.cf
87.16.dt
87.14.Cc
82.70.Uv
Opis:: The study has been performed on model systems of biological membranes obtained on the basis of 1,2-dimyristoyl-sn-glycero-3-phosphocholine (DMPC) and cationic gemini surfactant - derivative of 1,1'-(1,4-butane)bis 3-alkylo-xyme-thyli-mida-zolium chlorides with cyclic chains. The small angle X-ray scattering SAXS results implied a gradual disappearance (as a function of surfactant concentration) of the lamellar phase typical of DMPC and formation of unilamellar phase - probably a bicellar phase.
Źródło:: Acta Physica Polonica A; 2010, 117, 2; 311-314
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: High Quality Gate Insulator/GaN Interface for Enhancement-Mode Field Effect Transistor
Autorzy:: Taube, A.
Kruszka, R.
Borysiewicz, M.
Gierałtowska, S.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/1492515.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.dj
77.22.Ch
73.40.Qv
81.15.Gh
81.15.Cd
Opis:: The capacitance-voltage measurements were applied for characterization of the semiconductor/dielectric interface of GaN MOS capacitors with $SiO_2$ and $HfO_2//SiO_2$ gate stacks. From the Terman method low density of interface traps $(D_{it} \approx 10^{11} eV^{-1} cm^{-2})$ at $SiO_2//GaN$ interface was calculated for as-deposited samples. Samples with $HfO_2//SiO_2$ gate stacks have higher density of interface traps as well as higher density of mobile charge and effective charge in the dielectric layers. High quality of $SiO_2//GaN$ interface shows applicability of $SiO_2$ as a gate dielectric in GaN MOSFET transistors.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-022-A-024
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: Fabrication and Properties of Amorphous In-Ga-Zn-O Material and Transistors
Autorzy:: Kaczmarski, J.
Taube, A.
Dynowska, E.
Dyczewski, J.
Ekielski, M.
Kamińska, E.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/1399114.pdf
Data publikacji:: 2013-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 81.05.Gc
81.15.Cd
85.30.Tv
72.80.Ng
73.61.Jc
Opis:: In-Ga-Zn-O thin films were fabricated by means of reactive RF magnetron sputtering. Mechanism of free electrons generation via oxygen vacancies formation is proposed to determine the relationship between oxygen content in the deposition atmosphere and the transport properties of IGZO thin films. The depletion-mode a-IGZO thin film transistor with field-effect mobility of $12 cm^2/(Vs)$ has been demonstrated.
Źródło:: Acta Physica Polonica A; 2013, 124, 5; 855-857
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 5.

Tytuł:: Electronic Properties of Thin HfO$\text{}_{2}$ Films Fabricated by Atomic Layer Deposition on 4H-SiC
Autorzy:: Taube, A.
Gierałtowska, S.
Gutt, T.
Małachowski, T.
Pasternak, I.
Wojciechowski, T.
Rzodkiewicz, W.
Sawicki, M.
Piotrowska, A.
Powiązania:: https://bibliotekanauki.pl/articles/2048120.pdf
Data publikacji:: 2011-05
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 77.55.dj
77.22.Jp
73.40.Qv
81.15.Gh
Opis:: Applicability of thin HfO$\text{}_{2}$ films as gate dielectric for SiC MOSFET transistor is reported. Layers characterisation was done by means of atomic force microscopy and scanning electron microscopy, spectroscopic ellipsometry and C-V and I-V measurements of MIS structures. High permittivity dielectric layers were deposited using atomic layer deposition. Investigation showed high value of κ = 15 and existence of high density surface states (5 × 10$\text{}^{12}$ eV$\text{}^{-1}$ cm$\text{}^{-2}$) on HfO$\text{}_{2}$/SiC interface. High leakage current is caused probably due to low conduction band offset between hafnium oxide and silicon carbide.
Źródło:: Acta Physica Polonica A; 2011, 119, 5; 696-698
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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