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Wyświetlanie 1-15 z 40
Tytuł:
GaMnAs: Layers, Wires and Dots
Autorzy:
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811909.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
62.23.Hj
81.16.Hc
Opis:
Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation layers of amorphous arsenic. This post-growth treatment effectively increases the ferromagnetic-to-paramagnetic phase transition in GaMnAs, and provides surface-rich MnAs layer which can be used for formation of low-dimensional structures such as superlattices. If the surface rich MnAs layer consists of MnAs dots, then it is possible to grow Mn-doped GaAs nanowires.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1001-1012
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MBE Growth of YbTe on GaAs(100) and BaF$\text{}_{2}$(111) Substrates
Autorzy:
Sadowski, J.
Dynowska, E.
Kowalczyk, L.
Powiązania:
https://bibliotekanauki.pl/articles/1934069.pdf
Data publikacji:
1995-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
The structural properties of MBE grown YbTe layers were investigated by X-ray diffraction methods and photoluminescence measurements. YbTe films were grown on the ZnTe and CdTe buffer layers crystallised on the GaAs(100) 2° off oriented substrates and on the BaF$\text{}_{2}$(100) substrates. In the case of GaAs substrates the two-dimensional growth mode of YbTe was observed on reflection high energy electron diffraction picture. Results of the X-ray rocking curve and photoluminescence excitation measurements indicate that the structural properties of YbTe films are comparable to the properties of the MBE grown ZnTe and CdTe layers on the GaAs(100) substrates. The measured values of the YbTe lattice constant parallel and perpendicular to the growth plane show that the 1 μm thick layers are partially strained. The full width at half maximum values of the X-ray rocking curves are the smallest (900 arc seconds) for the YbTe films crystallised on the 2 μm thick CdTe bucher layer grown on the GaAs(100) substrate. In the case of BaF$\text{}_{2}$(111) substrate the two-dimensional MBE growth mode of YbTe was not observed.
Źródło:
Acta Physica Polonica A; 1995, 88, 5; 1028-1032
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Growth Processes of ZnTe Epilayers Deposited by MBE on GaAs(100) Vicinal Surfaces - Studies by Static and Dynamic RHEED
Autorzy:
Sadowski, J.
Dziuba, Z.
Herman, M. A.
Powiązania:
https://bibliotekanauki.pl/articles/1932085.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
Static and dynamic reflection high energy electron diffraction (RHEED) has been applied for studying the initial growth processes of ZnTe crystallized by molecular beam epitaxy (MBE) on vicinal surfaces of GaAs(100) substrates. Atomically smooth ZnTe epilayers have been grown by MBE when in situ thermal desorption of the substrate protecting oxide layer was performed in the ultra high vacuum environment of the vacuum growth chamber just before the growth of ZnTe started. By gradual increasing of the substrate temperature of the crystallized ZnTe epilayers from 300°C to 420°C, when recording the RHEED intensity oscillations at these and eleven intermittent temperatures, it has been shown that the transition from the 2D-nucleation growth mechanism to the step-flow growth mechanism of ZnTe occurs at 410°C. Measuring periods of RHEED intensity oscillations recorded during the MBE growth processes it has been demonstrated that the growth rate of ZnTe at constant fluxes of the constituent elements decreases with increasing temperature from 0.37 ML/s at 300°C to 0.22 ML/s at 400°C.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 225-228
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Vacancies in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As with Positron Annihilation Spectroscopy
Autorzy:
Tuomisto, F.
Slotte, J.
Saarinen, K.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2036028.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ji
75.50.Pp
78.70.Bj
Opis:
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As$\text{}_{2}$ partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As$\text{}_{2}$ partial pressure.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 601-606
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electrically Detected Magnetic Resonance
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Jantsch, W.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2038127.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
76.30.Pk
72.25.Rb
73.21.Fg
Opis:
We compare the results of electrically detected magnetic resonance in a 2D electron gas in Si/SiGe quantum wells with transport and magnetic resonance measurements on ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As. The results lead us to the conclusion that observation of electrically detected magnetic resonance is possible only in the case of a slow spin relaxation, where the microwave resonant absorption leads to a noticeable change of spin magnetization.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 591-598
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ferromagnetic, Ferrimagnetic and Spin-wave Resonances in GaMnAs Layers
Autorzy:
Fedorych, O.
Byszewski, M.
Wilamowski, Z.
Potemski, M.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2035590.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
76.30.Fc
75.50.Pp
75.30.Gw
Opis:
Molecular beam epitaxy grown Ga$\text{}_{1-x}$Mn$\text{}_{x}$As layers were investigated by means of magnetic resonances. With an increase in Mn concentration, x, the spectrum changes from the (i) paramagnetic one, with resolved fine and hyperfine structures, typical of S=5/2 spin of substitutional Mn$\text{}^{2+}$ ions, for very diluted alloy, via (ii) paramagnetic spectrum, where the fine and hyperfine structures are averaged by a long range Mn$\text{}^{2+}$-Mn$\text{}^{2+}$ exchange coupling, (iii) single, isotropic line of ferromagnetic resonance. Insulator to metal transition is accompanied with occurrence of (iv) a very complex spectrum of the ferrimagnetic resonance, accompanied with the well-resolved spin wave resonance. Reentrance to insulator phase for the most condensed alloys is accompanied with the reentrance to (v) ferromagnetic phase. The data confirm that the effective mass holes transfer the exchange interaction between localized Mn$\text{}^{2+}$ spins.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 617-625
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optical Pump - Terahertz Probe Measurement of the Electron Dynamics in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:
Šustavičiūtė, R.
Balakauskas, S.
Adomavičius, R.
Krotkus, A.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2047687.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.65.Re
07.57.Hm
78.47.+p
75.50.Pp
Opis:
An optical pump - terahertz probe technique was used for measuring electron lifetime in various Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers with the subpicosecond temporal resolution. The measurements were performed on the samples with x up to 2%, which had large resistivities and were transparent in a THz frequency range. It has been found that an induced THz absorption relaxation is the fastest and electron lifetimes are the shortest for the samples with the smallest Mn content. For the samples with x=0.3% and x=2% this relaxation becomes much slower; its rate is comparable to the carrier recombination rate in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As substrate.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 311-314
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Zn(Mn)O Surface Alloy Studied by Synchrotron Radiation Photoemission
Autorzy:
Guziewicz, E.
Kopalko, K.
Sadowski, J.
Guziewicz, M.
Golacki, Z.
Powiązania:
https://bibliotekanauki.pl/articles/2043720.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.-r
79.60.-i
79.60.Jv
Opis:
The Mn/ZnO(0001) system was investigated by synchrotron radiation photoemission. The Mn/ZnO interface with 4 ML of manganese deposited onto the ZnO surface was annealed up to 500ºC. No Mn capping layer was found at the surface after annealing as was confirmed by scanning Auger spectroscopy experiment. We used a resonant photoemission to extract the Mn3d partial density of states in photoemission spectra. The Mn3d states contribute to the electronic structure of the system within 10 eV of the Fermi level. They show three features: a main peak at 3.8-4.5 eV, a valence structure at the top of the valence band (1-3 eV), and a broad satellite situated between 5.5 and 9 eV below E$\text{}_{F}$. The satellite/main branching ratio was determined to be 0.43, which is a fingerprint of strong hybridization between the Mn3d electrons and the valence band of the crystal. The hybridization effect in Zn$\text{}_{1-x}$ Mn$\text{}_{x}$O surface alloy is comparable to Zn$\text{}_{1-x}$Mn$\text{}_{x}$S and much higher than in Zn$\text{}_{1-x}$Mn$\text{}_{x}$Se, Zn$\text{}_{1-x}$Mn$\text{}_{x}$Te, and Ga$\text{}_{1-x}$Mn$\text{}_{x}$As semimagnetic compounds.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 689-696
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic Resonance Studies of the Origin of Ferromagnetism in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As
Autorzy:
Fedorych, O. M.
Wilamowski, Z.
Potemski, M.
Byszewski, M.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2036029.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
76.30.Fc
75.50.Pp
75.30.Gw
Opis:
Different types of magnetic resonance observed in Ga$\text{}_{1-x}$Mn$\text{}_{x}$As reflect three different magnetic phases: para-, ferro-, and ferrimagnetic. Ferromagnet is characterized by single isotropic resonance line. A complex spectrum in ferrimagnet can be described by g factor equal to 1.44 and a sum of an axial and cubic anisotropy field. The axial field is by an order of magnitude greater than the cubic one. The complex structure of ferrimagnetic resonance is attributed to spin-wave resonance. Quantitative analysis of the dispersion of spin wave shows that the range of exchange coupling is very long, of the order of 25 nm, while spin-wave stiffness and the total exchange field are very small. The exchange field as evaluated from spin wave is by two orders of magnitude smaller than the Zener field corresponding to the critical temperature.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 607-612
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Magnetic and Magneto-Transport Characterization of (Ga,Mn)(Bi,As) Epitaxial Layers
Autorzy:
Levchenko, K.
Andrearczyk, T.
Domagala, J.
Wosinski, T.
Figielski, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1195381.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Pp
75.30.Gw
73.50.Jt
85.75.-d
Opis:
High-quality layers of the (Ga,Mn)(Bi,As) quaternary compound semiconductor have been grown by the low-temperature molecular-beam epitaxy technique. An effect of Bi incorporation into the (Ga,Mn)As ferromagnetic semiconductor and the post-growth annealing treatment of the layers have been investigated through examination of their magnetic and magneto-transport properties. Significant enhancement of the planar Hall effect magnitude upon addition of Bi into the layers is interpreted as a result of increased spin-orbit coupling in the (Ga,Mn)(Bi,As) layers.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1121-1124
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fermi Level Position in GaMnAs - a Thermoelectric Study
Autorzy:
Osinniy, V.
Jędrzejczak, A.
Arciszewska, M.
Dobrowolski, W.
Story, T.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/2027483.pdf
Data publikacji:
2001-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.30.Et
73.50.-h
Opis:
Thermoelectric power was studied in the temperature range 100≤ T≤300 K in 0.3-1μm thick ferromagnetic Ga$\text{}_{1-x}$Mn$\text{}_{x}$As epitaxial layers (0.015≤ x≤0.06) in order to determine Fermi energy E$\text{}_{F}$ and carrier concentration p. For 0.015≤ x≤0.05, at T=273 K we find E$\text{}_{F}$=275±50 meV and p=(2.5± 0.5)×10$\text{}^{20}$ cm$\text{}^{-3}$ (approximately Mn content independent). For x= 0.06, the Fermi energy decreases by about 100 meV with the corresponding reduction of hole concentration to p=1.2×10$\text{}^{20}$ cm$\text{}^{-3}$. At T=120 K, these parameters vary between E$\text{}_{F}$=380 meV and p=3.5×10$\text{}^{20}$ cm$\text{}^{-3}$ for x=0.015 to E$\text{}_{F}$=110 meV and p=5×10$\text{}^{19}$ cm$\text{}^{-3}$ for x=0.06.
Źródło:
Acta Physica Polonica A; 2001, 100, 3; 327-334
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Structural and Electrical Properties of Low Concentration SnTe Layers and PbTe/SnTe Heterostructures Grown by MBE
Autorzy:
Sadowski, J.
Grodzicka, E.
Dynowska, E.
Adamczewska, J.
Domagała, J.
Przedpelski, W.
Powiązania:
https://bibliotekanauki.pl/articles/1968416.pdf
Data publikacji:
1997-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.14.Hg
81.15.Gh
Opis:
We analyse properties of thin SnTe layers and PbTe/SnTe heterostructures grown by MBE on BaF$\text{}_{2}$(111) substrates. Reflection high energy electron diffraction patterns registered during MBE growth of the samples as well as post-growth X-ray diffraction measurements evidence a high structural perfection of 0.6 μm thick SnTe layers and (50 Å PbTe)/(50 Å SnTe) superlattices. The full width at half maximum values of (222) X-ray rocking curves measured for these thin SnTe layers crystallized in the optimal MBE growth conditions are about 300 arcsec; the carrier concentrations can be tuned from 5×10$\text{}^{19}$ cm$\text{}^{-3}$ to 10$\text{}^{2 1}$ cm$\text{}^{-3}$ depending on the MBE process parameters.
Źródło:
Acta Physica Polonica A; 1997, 92, 5; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Bistability of (Ga,Mn)As Ferromagnetic Nanostructures Due to the Domain Walls Switching
Autorzy:
Andrearczyk, T.
Wosiński, T.
Mąkosa, A.
Figielski, T.
Wróbel, J.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1791342.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.50.Jt
75.50.Pp
75.30.Gw
75.60.Ch
85.75.-d
Opis:
We designed and investigated four-arm nanostructures, composed of two perpendicularly crossed stripes, fabricated from ferromagnetic (Ga,Mn)As layer by means of electron-beam lithography patterning and chemical etching. The nanostructures exhibit a bistable resistance behavior resulting from two configurations of magnetic domain walls in the central part of the structures. We demonstrate a possibility of switching between two stable resistance states in zero magnetic field by applying a pulse of either weak magnetic field or electric current through the structure.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 901-903
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Off-Axis Electron Holography of Magnetic Nanostructures: Magnetic Behavior of Mn Rich Nanoprecipitates in (Mn,Ga)As System
Autorzy:
Barańska, M.
Dłużewski, P.
Kret, S.
Morawiec, K.
Li, Tian
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1033003.pdf
Data publikacji:
2017-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.jp
68.37.Lp
07.05.Pj
75.50.Pp
Opis:
The Lorentz off-axis electron holography technique is applied to study the magnetic nature of Mn rich nanoprecipitates in (Mn,Ga)As system. The effectiveness of this technique is demonstrated in detection of the magnetic field even for small nanocrystals having an average size down to 20 nm.
Źródło:
Acta Physica Polonica A; 2017, 131, 5; 1406-1408
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
Autorzy:
Gutowski, M.
Stefanowicz, W.
Proselkov, O.
Sawicki, M.
Żuberek, R.
Sadowski, J.
Powiązania:
https://bibliotekanauki.pl/articles/1428597.pdf
Data publikacji:
2012-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
07.05.Kf
68.47.Fg
75.30.Gw
75.50.Pp
75.70.-i
75.70.Ak
75.70.Cn
75.70.Rf
76.50.+g
Opis:
In this work we report results of ferromagnetic resonance studies of a 6% 15nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from $[\overline{1}10]$ to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, $H_{eff}$ (=4π $M-H_{2⊥}$), $H_{2∥},$ and $H_{4∥}$. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
Źródło:
Acta Physica Polonica A; 2012, 121, 5-6; 1228-1230
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 40

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