Autor: Paszkiewicz, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Numerical Stability of Solution of Recursion Relation for Ideal Quantum Gases Containing Finite Number of Harmonically Trapped Particles
Autorzy:: Paszkiewicz, T.
Wolski, S.
Powiązania:: https://bibliotekanauki.pl/articles/1402575.pdf
Data publikacji:: 2015-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 05.30.Fk
03.75.Ss
Opis:: The numerical stability of the solution of recursion relation for mean occupation numbers derived by Schönhammer for ideal Fermi gas trapped in 1D harmonic potential is studied. In low temperature region there exists a solution of this recursion relation. In high temperature region the iteration becomes unstable. In low and high temperature regions with growing number of particles the region of numerical instability diminishes.
Źródło:: Acta Physica Polonica A; 2015, 128, 2; 204-207
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: Response of Superconductor Bolometer to Phonon Fluxes
Autorzy:: Danilchenko, B. A.
Jasiukiewicz, Cz.
Paszkiewicz, T.
Wolski, S.
Powiązania:: https://bibliotekanauki.pl/articles/2035733.pdf
Data publikacji:: 2003-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
02.30.Hq
66.70.+f
Opis:: A metallic film bolometer with heat capacity C is in contact with thermal bath and with crystalline specimen and is biased by a constant current I$\text{}_{b}$. The thermal contact of the bolometer is characterized by the thermal conductance G. The bolometer operates in the linear regime of dependence of resistance on temperature characterized by a constantα. Experiments which allow one to measureα, C, and G are proposed. The characteristic timeτ=C/G and characteristic current I$\text{}_{m}=\sqrt{\text{G/α}}$ affect the effective relaxation rateΛ of the bolometer resistance R$\text{}_{b}$(t). The knowledge of the power W(t) absorbed by detector allows one to calculate R$\text{}_{b}$(t). The inverse problem of calculation of W(t) from known R$\text{}_{b}$(t) is also solved. The suitable algorithms are proposed. Deconvoluted absorbed power is obtained for experiments performed on GaAs and compared with phonoconductivity signal of two-dimensional electron gas structure as well as with results of Monte Carlo computer experiments.
Źródło:: Acta Physica Polonica A; 2003, 103, 4; 325-338
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Diffusive Propagation of Phonon Beams in Yttrium Aluminum Garnets Containing Substitutional Rare Earth Atoms
Autorzy:: Ivanov, S.
Khazanov, E.
Paszkiewicz, T.
Taranov, A.
Wilczyński, M.
Powiązania:: https://bibliotekanauki.pl/articles/1872971.pdf
Data publikacji:: 1995-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 63.20.Mt
66.70.+f
05.60.+w
Opis:: The diffusive maxima of phonon signals are studied for a number of solid solutions of rare earth atoms in yttrium aluminum garnets. The used exact formula for the diffusion constants allows for qualitative discussion of the obtained results. The established energy of phonons, forming the diffusive maximum of phonon signal of the temperature T$\text{}_{H}$ arriving at the bolometer, ranges from 3.2k$\text{}_{B}$T$\text{}_{H}$ to 4.2k$\text{}_{B}$T$\text{}_{H}$, which is in reasonable agreement with the existing estimations. The qualitative analysis allows us to estimate the contribution, made by the rare earth ions occupying the octahedral positions of the sixfold oxygen coordination, to the scattering of phonons due to lattice imperfections in yttrium aluminum garnets.
Źródło:: Acta Physica Polonica A; 1995, 87, 2; 381-386
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 4.

Tytuł:: Polarity Related Problems in Growth of GaN Homoepitaxial Layers
Autorzy:: Leszczyński, M.
Prystawko, P.
Śliwinski, A.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Paszkiewicz, R.
Tłaczała, M.
Beaumont, B.
Gibart, P.
Barski, A.
Langer, R.
Knap, W.
Frayssinet, E.
Powiązania:: https://bibliotekanauki.pl/articles/1991873.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 61.72.Vv
65.70.+y
Opis:: Homoepitaxial layers of GaN were grown by metalorganic chemical vapour deposition on single crystals obtained by high-pressure, high-temperature technology. For each metalorganic chemical vapour deposition run, four samples were placed, (00.1) and (00.1̲) faces of the Mg-doped insulating and undoped highly-conductive substrates. The layers were examined using X-ray diffraction, photoluminescence and far-infrared reflectivity. It was found that the (00.1̲) easier incorporates donors resulting in higher free-electron concentrations in the layers grown on these sides of the crystals, both, undoped and Mg-doped.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 427-430
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

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