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    Wyświetlanie 1-14 z 14
    Tytuł:
    Influence of Growth Conditions and Doping on Physical Properties of Gallium Antimonide Single Crystals
    Autorzy:
    Mirowska, A.
    Orłowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1409657.pdf
    Data publikacji:
    2012-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Ea
    81.10.Fq
    81.10.-h
    81.10.St
    72.80.Ey
    71.55.Eq
    61.72.uj
    Opis:
    Gallium antimonide (GaSb) single crystals were grown by modified Czochralski method integrated with in situ synthesis in a flowing atmosphere of pure hydrogen. The influence of charge material purity as well as other technological parameters on GaSb crystals quality was investigated. High purity undoped GaSb single crystals were grown with residual acceptors concentration < 1.4 × $10^{17} cm^{-3}$ and high mobility ≈ 690 $cm^2$/Vs (at 300 K). P-type GaSb crystals were doped with silicon (carrier concentration up to 2 × $10^{19} cm^{-3}$) and with zinc (up to 1 × $10^{19} cm^{-3}$). Tellurium doped n-type GaSb single crystals were obtained with concentration up to 2 × $10^{18} cm^{-3}$. Electrical parameters were investigated by the Hall measurements (300 K and 77 K). Temperature dependent Hall measurements (10 ÷ 300 K) were used to compare the quality of undoped GaSb (obtained from Sb of different purity). Dopant concentration was estimated by glow discharge mass spectroscopy analysis. Axial and radial distribution of carrier concentration were investigated especially for Te-doped crystals (low segregation coefficient of Te in GaSb). Great contribution of compensation and self-compensation mechanisms is shown especially for the beginning part of grown crystals and for low Te-doping level. Radial distribution of physical properties for crystals grown in 〈100〉 direction is not axisymmetrical especially for doped GaSb crystals.
    Źródło:
    Acta Physica Polonica A; 2012, 122, 6; 1111-1114
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Chemical Composition of Liquid Phase and Growth Process on Physical Properties of $Bi_2Se_3,$ $Bi_2Te_3$ and $Bi_2Te_2Se$ Compounds
    Autorzy:
    Hruban, A.
    Materna, A.
    Dalecki, W.
    Strzelecka, G.
    Piersa, M.
    Jurkiewicz-Wegner, E.
    Diduszko, R.
    Romaniec, M.
    Orłowski, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492965.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    72.10.-d
    72.15.-v
    72.20.-I
    73.20.-r
    Opis:
    We studied synthesis and crystal growth of $Bi_2Te_3,$ $Bi_2Se_3$ and $Bi_2Te_2Se$ compounds by means of vertical Bridgman method. Crystals were grown from stoichiometric melts and under different molar ratio of Bi:Te, Bi:Se or Bi:Te:Se. The obtained crystals were characterized by X-ray diffraction analysis, energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, and the Hall effect measurements. Some of the samples demonstrated insulating bulk behavior, by means of resistivity versus temperature measurements.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 950-953
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Infrared Spectroscopy of GaAs Doped with Mn
    Autorzy:
    Rutkowska, A.
    Wasik, D.
    Witowski, A.
    Sadowski, M.
    Orłowski, W.
    Strzelecka, G.
    Hruban, A.
    Kamińska, M.
    Twardowski, A.
    Potemski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044531.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.70.Ej
    78.20.Ls
    78.30.Fs
    Opis:
    We found that the fine structure related to Lyman spectra of [Mn$\text{}^{2+}$(d$\text{}^{5}$) + a hole] centers in GaAs was present only for samples with low Mn concentration. Such samples, at low temperature, did not show any hopping conductance within Mn impurity band. Magnetooptical measurements revealed that magnetic field induced splitting of the Lyman optical transitions was larger than Zeeman splitting observed for typical shallow acceptors in GaAs, like Be, Zn, and C. This experimental result proved that in the case of Mn acceptor impurity, the exchange coupling of a hole and the S = 5/2 Mn$\text{}^{2+}$(d$\text{}^{5}$) core could not be neglected, which was in accordance with the [Mn$\text{}^{2+}$(d$\text{}^{5}$) + a hole] model of the neutral Mn center in GaAs.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 845-849
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Reflectivity Study of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se Crystals
    Autorzy:
    Guziewicz, E.
    Kowalski, B. J.
    Orłowski, B. A.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931782.pdf
    Data publikacji:
    1994-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Fi
    Opis:
    The reflectivity spectra of Hg$\text{}_{1-x}$Co$\text{}_{x}$Se (x = 0.0, 0.024, 0.031) crystals were measured in the vacuum ultraviolet photon energy range from 4 to 12 eV to find the influence of Co ions on the valence band electronic structure of the HgSe crystal. The structure of the reflectivity spectra was interpreted in terms of the electronic band structure of the binary material (HgSe) assuming direct allowed interband transitions.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 5; 875-878
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Band Structure of Cubic HgS
    Autorzy:
    Guziewicz, E.
    Kowalski, B.
    Orłowski, B. A.
    Dybko, K.
    Witkowska, B.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873013.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.20.Fi
    Opis:
    Reflectivity spectra of Hg$\text{}_{1-x}$Fe$\text{}_{x}$S (x < 0.04) and HgSe$\text{}_{1-y}$S$\text{}_{y}$ (y < 0.5) mixed crystals were measured in the vacuum ultraviolet energy range from 4 to 12 eV. Information about the electronic band structure of cubic modification of HgS resulting from the above data is analyzed and discussed.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 395-398
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fe 3d Contribution to the Valence Band of Cubic Hg$\text{}_{1-x}$Fe$\text{}_{x}$S - Resonant Photoemission Study
    Autorzy:
    Kowalski, B. J.
    Orłowski, B. A.
    Szuszkiewicz, W.
    Witkowska, B.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933837.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    Opis:
    Resonant photoemission spectra of cubic Ηg$\text{}_{0.94}$Fe$\text{}_{0.06}$S were measured for photon energies near to the energy of intra atomic Fe 3p$\text{}^{6}$3d$\text{}^{6}$ → 3p$\text{}^{5}$3d$\text{}^{7}$ transition. The difference between the spectra taken at resonance and antiresonance is presented as a measure of the energy distribution of Fe 3d derived states. The results obtained show that Fe 3d states contribute to the whole valence band with a distinct structure appearing at the band edge.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 791-794
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Comparison of the Valence Band Structure of Bulk and Epitaxial GeTe-based Diluted Magnetic Semiconductors
    Autorzy:
    Pietrzyk, M.
    Kowalski, B.
    Orlowski, B.
    Knoff, W.
    Story, T.
    Dobrowolski, W.
    Slynko, V.
    Slynko, E.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538868.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    71.20.Be
    Opis:
    In this work we present a comparison of the experimental results, which have been obtained by the resonant photoelectron spectroscopy for a set of selected diluted magnetic semiconductors based on GeTe, doped with manganese. The photoemission spectra are acquired for the photon energy range of 40-60 eV, corresponding to the Mn 3p → 3d resonances. The spectral features related to Mn 3d states are revealed in the emission from the valence band. The Mn 3d states contribution manifests itself in the whole valence band with a maximum at the binding energy of 3.8 eV.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 293-295
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoemission Electronic Spectra οf CdTe/$Pb_{0.95}Eu_{0.05}Te$/CdTe
    Autorzy:
    Orlowski, B.
    Dziawa, P.
    Gas, K.
    Reszka, A.
    Mickievicius, S.
    Thiess, S.
    Drube, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492971.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.Jv
    71.20.Mq
    73.40.-c
    Opis:
    The synchrotron radiation was used to apply tunable high energy X-ray photoemission spectroscopy for investigation of electronic structure of semiconductor nanostructure CdTe/$Pb_{0.95}Eu_{0.05}Te$/CdTe/GaAs(001) top part. The $Pb_{0.95}Eu_{0.05}Te$ (6 nm thick) was buried under thin (22 nm) top layer of CdTe transparent for part of electrons photoemitted from $Pb_{0.95}Eu_{0.05}Te$ buried layer. The top layer of CdTe was sputtered by Ar ion bombardment for surface cleaning and for leaving the thickness of CdTe more transparent for photoelectrons emitted from buried layer. For these thickness of the top layer the photoemission energy distribution curves corresponding to the valence band and core levels electrons of the buried layer atoms were measured with application of synchrotron radiation of energy hν = 3510 eV. The measured spectra corresponding to the buried layer atoms were observed in the valence band region and in the high binding energy region for core levels of Pb 4f, Pb 3d. The valence band contribution and core levels Cd 4d and Cd 3d were obtained mainly from top cover layer. Measured Te 4d, Te 3d and Te 4d spectra possess contribution as well from top cover layer as from the buried layer. The amount of Eu atoms was to small to be reasonable detected and presented in the paper.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 960-963
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Visible Luminescence from Porous Silicon
    Autorzy:
    Bała, W.
    Firszt, F.
    Nossarzewska-Orłowska, E.
    Brzozowski, A.
    Orłowski, B. A.
    Kowalski, B. J.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929748.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    Opis:
    This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 761-764
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Structure of the CdTe(100)-(1×1) Surface
    Autorzy:
    Gawlik, K.-U.
    Brugmann, J.
    Harm, S.
    Janowitz, C.
    Manzke, R.
    Skibowski, M.
    Solterbeck, C.-H.
    Schattke, W.
    Orłowski, B. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920920.pdf
    Data publikacji:
    1992-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Et
    79.60.Eq
    Opis:
    Unreconstructed CdTe(100) surface prepared by ion bombardment and annealing is investigated by angle-resolved photoemission. The experimental band structure E(k$\text{}_{∥}$) is determined along high-symmetry lines of the surface Brillouin zone by measuring energy-distribution curves of photoelectrons. Different criteria were applied to separate surface and bulk related spectral features, e.g. calculating the position of bulk-derived emissions in the frame of the free-electron final state approximation assuming k conservation. In this way, most dispersing features could be explained. All remaining features were compared with theoretical surface band structures for different polar surface terminations which were calculated within a layer doubling procedure on the basis of an EHT-fit to the bulk band structure. The investigated CdTe(100)-(1×1) surface could be identified as Cd terminated. Two surface bands were observed, one located above the valence-band edge and the second in the open pocket of the projected bulk band structure along the Γ̅K̅ direction. At 4.6 eV binding energy an additional weakly dispersing band was found, which contains mixed surface and bulk character. The high density of bulk states associated with this edge of the heteropolar gap is also expected to contribute to this feature.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 2; 355-361
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Surface Hydro-Oxidation of LaNiO$\text{}_{3-x}$ Thin Films
    Autorzy:
    Mickevičius, S.
    Grebinskij, S.
    Bondarenka, V.
    Lisauskas, V.
    Šliužienė, K.
    Tvardauskas, H.
    Vengalis, B.
    Orłowski, B. A.
    Osinniy, V.
    Drube, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047365.pdf
    Data publikacji:
    2007-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Nr
    29.20.Lq
    Opis:
    The high-energy X-ray photoelectron spectroscopy was used to determine the composition and chemical structure of epitaxial LaNiO$\text{}_{3-x}$ films obtained by a reactive dc magnetron sputtering. It was found that the oxide and hydroxide species of La and Ni are on the films surface. The thickness of hydroxide enriched layer, estimated from the oxide and hydroxide peak intensities, is about 2 nm.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 1; 113-120
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
    Autorzy:
    Pietrzyk, M. A.
    Kowalski, B. J.
    Orłowski, B. A.
    Knoff, W.
    Osinniy, V.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047678.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 275-281
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Valence States of Metal Ions in $La_{0.7}Ce_{0.3}MnO_3$ Thin Films
    Autorzy:
    Mickevičius, S.
    Bondarenka, V.
    Grebinskij, S.
    Oginskis, A.
    Butkutė, R.
    Tvardauskas, H.
    Vengalis, B.
    Orlowski, B.
    Osinniy, V.
    Pietrzyk, M.
    Drube, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813469.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Nr
    71.20.Eh
    Opis:
    We report valence states of ions in $La_{0.7}Ce_{0.3}MnO_3$ thin films grown by a reactive dc magnetron sputtering. The measurements were performed by means of high-energy X-ray photoelectron spectroscopy using synchrotron radiation. It was found that Ce ion in the compound is either in tetravalent or trivalent chemical state, manganese is in divalent, trivalent and tetravalent states, while La ion existing in oxide and hydroxide chemical species is in trivalent state.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 1071-1074
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Resonance and Dielectric Studies of a Nonlinear La$\text{}_{3}$Ga$\text{}_{5.5}$Ta$\text{}_{0.5}$O$\text{}_{14}$ Single Crystal Doped with Erbium
    Autorzy:
    Bodziony, T.
    Typek, J.
    Orlowski, M.
    Majszczyk, J.
    Wabia, M.
    Berkowski, M.
    Ryba-Romanowski, W.
    Guskos, N.
    Likodimos, V.
    Anagnostakis, E. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035732.pdf
    Data publikacji:
    2003
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.Kg
    77.22.Ch
    Opis:
    Single crystal of erbium doped La$\text{}_{3}$Ga$\text{}_{5.5}$Ta$\text{}_{0.5}$O$\text{}_{14}$ grown by the Czochralski method have been investigated by electron paramagnetic resonance and dielectric spectroscopy methods. Dielectric permittivity ε measurements performed in 90-440 K temperature range have shown negligible dispersion for 1 kHz - 1 MHz frequencies and a Curie-Weiss type behaviour with C=47700 K andθ=-340 K. Electron paramagnetic resonance studies have revealed the presence of two different paramagnetic, monoclinic centres. The calculated g factor values are: g$\text{}_{1}$=1.449, g$\text{}_{2}$=11. 534, g$\text{}_{3}$=4.24 for the main M$\text{}_{1}$ centre and g$\text{}_{1}$=1.98, g$\text{}_{2}$=4.169, g$\text{}_{3}$=4.25 for the weaker M$\text{}_{2}$ centre. The temperature dependence of EPR line intensity for centre M$\text{}_{1}$ and M$\text{}_{2}$ is quite different - while lines attributed to M$\text{}_{1}$ could only be observed at low temperatures, below 20 K, lines of M$\text{}_{2}$ centre persisted up to 200 K. The M$\text{}_{1}$ centre is connected with Er$\text{}^{3+}$ ion entering substitutionally into La$\text{}^{3+}$ site, while M$\text{}_{2}$ is probably connected with 3d ions at the same site, unintentionally introduced into the material as an admixture.
    Źródło:
    Acta Physica Polonica A; 2003, 103, 2-3; 315-322
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-14 z 14

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