Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Orłowska, A." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-6 z 6
    Tytuł:
    Photoluminescence Properties of Porous Silicon Prepared by Electrochemical Etching of Si Epitaxial Layer
    Autorzy:
    Nossarzewska-Orłowska, E.
    Brzozowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929736.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    81.60.-j
    Opis:
    The photoluminescence properties of porous layers prepared by anodization of p/p$\text{}^{+}$ silicon epitaxial wafers are presented. The shift of the photoluminescence spectrum towards shorter wavelength due to the porosity increase and the experimental dependence of the photoluminescence maximum position on HF concentration during anodization are shown. Degradation of the photoluminescence intensity dependence on the storage time is described.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 713-716
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Mean Escape Depth of Signal Photoelectrons from Amorphous and Polycrystalline Solids
    Autorzy:
    Tilinin, I. S.
    Jabłoński, A.
    Lesiak-Orłowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931766.pdf
    Data publikacji:
    1994-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    34.80.Bm
    72.10.Bg
    79.60.-i
    Opis:
    Escape depth of photoelectrons leaving a target without being scattered inelastically was submitted to extensive theoretical analysis. Dependence of the mean escape depth on the X-ray angle of incidence and the electron initial angular distribution inside the sample was considered. The Monte Carlo algorithm was developed basing on a differential elastic scattering cross-section calculated within the partial-wave expansion method and a realistic electron-atom interaction potential. The mean escape depth was evaluated by means of the depth distribution function found analytically by solving a kinetic equation and by the Monte Carlo technique. The agreement between the results obtained from two methods is excellent. Elastic scattering was found to reduce considerably the escape depth. This reduction may reach up to 25% in the case of heavy elements in the practical X-ray photoelectron spectroscopy analysis. It was shown that the mean escape depth expressed in units of the electron transport mean free path is a universal function of the ratio of the inelastic to the transport mean free paths, the asymmetry parameter and the X-ray angle of incidence. A simple explicit expression for this function is proposed.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 5; 845-852
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Signal Photoelectron Yield Dependence on the X-Ray Angle of Incidence
    Autorzy:
    Tilinin, I. S.
    Jabłoński, A.
    Lesiak-Orłowska, B.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931768.pdf
    Data publikacji:
    1994-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    34.80.Bm
    72.10.Bg
    79.60.-i
    Opis:
    The photoelectron emission from solids irradiated by X-rays was described by the analytical theory of electron transport and simulated by the Monte Carlo technique. The medium energy electron transport problem is treated by means of a Boltzmann type kinetic equation satisfying appropriate boundary conditions. The solution of the transport equation was obtained in the transport approximation based on the generalized radiative field similarity principle. Simple and reliable formalism was derived for both the differential and the total photoelectron yields. The dependence of the photoelectron yield on the X-ray incidence angle and the "flattening" effect of multiple elastic scattering on the angular distribution of electrons leaving the target are analysed in detail. The photoelectron yields and angular distributions calculated by the Monte Carlo algorithm, based on a realistic differential elastic scattering cross-section, are in good agreement with the results found from analytical theory. It is shown that main characteristics of the photoelectron emission are determined primarily by two parameters: the inelastic and the transport mean free paths.
    Źródło:
    Acta Physica Polonica A; 1994, 86, 5; 853-859
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Lattice Strains in Layered Structures Containing Porous Silicon
    Autorzy:
    Wierzchowski, W.
    Wieteska, K.
    Graeff, W.
    Brzozowski, A.
    Nossarzewska-Orłowska, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035501.pdf
    Data publikacji:
    2002-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.55.-a
    Opis:
    Silicon layered structures containing porous silicon modified with various thermal treatments and epitaxial layers deposited on porous layers were studied with a number of complementary X-ray diffraction methods using synchrotron source. The methods of characterisation included recording of rocking curves for reflections with various asymmetry as well as projection, section and micro-Laue topography. It was found that oxidising and sintering of porous silicon seriously modified the strains in the porous layer and in some cases even inverting the sense of strain with respect to that in initially formed porous layer. Consequently the deposited epitaxial layer usually was not laterally coherent with the substrate. Some of the investigated layers were not stable in time and after few months period exhibited significant lost of coherence of porous skeleton.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 2; 283-288
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Visible Luminescence from Porous Silicon
    Autorzy:
    Bała, W.
    Firszt, F.
    Nossarzewska-Orłowska, E.
    Brzozowski, A.
    Orłowski, B. A.
    Kowalski, B. J.
    Guziewicz, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1929748.pdf
    Data publikacji:
    1993-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.66.-w
    Opis:
    This paper presents results of investigation of the temperature dependence of visible luminescence in porous silicon layers prepared by anodization in hydrofluoric acid. Luminescence spectra were measured in the temperature range between 40 K and 350 K. Room temperature reflectivity spectra were also measured in vacuum ultraviolet radiation range from 4 eV to 12 eV.
    Źródło:
    Acta Physica Polonica A; 1993, 84, 4; 761-764
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Photoluminescence, Reflectivity and Raman Investigations of Nanocrystallites in Luminescent Porous Silicon
    Autorzy:
    Bała, W.
    Głowacki, G.
    Łukasiak, Z.
    Drozdowski, M.
    Kozielski, M.
    Nossarzewska-Orłowska, E.
    Brzozowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1876076.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Hv
    78.66.-w
    Opis:
    Raman scattering, reflectivity and photoluminescence measurements of the porous silicon layers prepared on (001) p/p$\text{}^{+}$ silicon epitaxial wafers by anodization method are presented. We have studied dependence of the frequency shift and halfwidth of LO mode in Raman spectra and shift of the luminescence peak in photoluminescence spectra vs. anodization conditions.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 445-448
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies