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    Wyświetlanie 1-13 z 13
    Tytuł:
    Acousto-Optic Devices Based on Potassium Rare-Earth Tungstates Laser Crystals
    Autorzy:
    Velikovskii, D.
    Pozhar, V.
    Mazur, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1383396.pdf
    Data publikacji:
    2015-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.70.Hj
    42.79.Jq
    42.60.Fc
    43.35.Sx
    Opis:
    We present a family of original acousto-optical devices. They are based on new acousto-optical materials $KRE(WO_4)_2$, where RE = Y, Gd, Yb, Lu. A combination of features such as radiation resistance, optical biaxiality and appreciable acousto-optical figure of merit, makes possible creation of polarization-insensitive modulator with almost 100% of diffraction efficiency. The deflector with wide angular aperture and broad range of deflection, and collinear tunable filter are also suggested.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 1; 75-77
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Properties of Nanocrystalline $TiO_{2}:V$ Thin Films as a Transparent Semiconducting Oxides
    Autorzy:
    Sieradzka, K.
    Domaradzki, J.
    Prociow, E.
    Mazur, M.
    Lapinski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807607.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    78.66.-w
    71.20.Nr
    Opis:
    In this work the nanocrystalline $TiO_{2}$ thin films doped with vanadium in amount of 19 at.% and 23 at.% prepared by magnetron sputtering method have been presented. The transmission measurements shows that V-doped $TiO_{2}$ thin films were transparent in ca. 81% in the visible range of light spectrum. On the basis of electrical examinations it was found that fabricated $TiO_2:V$ thin films are semiconductors at room temperature and have different type of electrical conduction depending on the amount of vanadium dopant applied.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-33-S-35
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Antistatic Properties of Nanofilled Coatings
    Autorzy:
    Gornicka, B.
    Mazur, M.
    Sieradzka, K.
    Prociow, E.
    Lapinski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538175.pdf
    Data publikacji:
    2010-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Pr
    82.35.Np
    Opis:
    The results of antistatic and electrical properties investigations of nanofilled coatings have been presented. Antistatic performance of materials is essential not only due to safety and preventing of dust and dirt attraction but also effects on an electrical field distribution in the high voltage insulating systems. The polymer coating added with silver and silica nanoparticles were examined by charge decay measurements after corona charging. The charge decay times have varied appreciably between the nanofilled coatings while the volume and surface resistivity of the all tested coatings did not demonstrate meaningful differences. The polyester coating dissipated fairly better than polyesterimide because of its structure and permittivity. It was found that the ability of surface to drain charge away is the better for coatings with of silver nanoparticles whereas the coatings modified with nanosilica shows the poor antistatic properties; the times of charge decay were four order longer then that of unmodified coatings. Barrier properties of nanosilica may be adverse for charge decay.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 5; 869-872
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Optical Response of Gasochromic Thin Film Structures through Modelling of Their Transmission Spectra under Presence of Organic Vapor
    Autorzy:
    Domaradzki, J.
    Mazur, M.
    Wojcieszak, D.
    Kaczmarek, D.
    Jedrzejak, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1189782.pdf
    Data publikacji:
    2015-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.20.-e
    Opis:
    Properties of chromogenics materials have been of great interest for more than 50 years till now. Some examples of their practical application are photochromic lenses, electrochromic smart windows or even some examples of sensors devices based on gasochromic thin films have already been commercially available on the market. However, recognition of different physical and chemical processes that influence the optical response of such materials under changes in surrounding atmosphere is still an open subject for discussion. This work presents results of experimental and theoretical investigations of optical response of the two selected gasochromic (Ti-V-Ta-W)Ox and (Ti-V-Ta-Nb)Ox oxide thin films under ethanol vapor stimulations. Based on the measured experimental transmission spectra, the complex refraction index characteristics were plotted using optical models elaborated for the VIS-NIR spectral range. The models were further used for the prediction of optical responses of optical gas sensing structures with observed gasochromic behavior.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 6; 1702-1705
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thin Films Based on Nanocrystalline $TiO_{2}$ for Transparent Electronics
    Autorzy:
    Prociow, E.
    Sieradzka, K.
    Domaradzki, J.
    Kaczmarek, D.
    Mazur, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807647.pdf
    Data publikacji:
    2009-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.61.Ey
    78.66.-w
    71.20.Nr
    Opis:
    In this work, investigations of structural, optical and electrical properties of transparent oxide semiconductor thin films based on $TiO_{2}$ doped with Eu, Pd and Tb, Pd have been presented. The transparent oxide semiconductor nanocrystalline thin films were prepared by magnetron sputtering process. It was shown that doping with selected elements results in semiconducting properties of prepared thin films of oxides with p-($TiO_{2}$:(Tb, Pd)) or n-type ($TiO_{2}$:(Eu, Pd)) of electrical conduction.
    Źródło:
    Acta Physica Polonica A; 2009, 116, S; S-72-S-74
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modification of Electronic Structure of n-GaN(0001) Surface by N⁺-Ion Bombardment
    Autorzy:
    Grodzicki, M.
    Mazur, P.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033786.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.47.Fg
    73.30.+y
    82.80.Pv
    Opis:
    The electronic structure of n-type GaN(0001) surface and its modification by N⁺ ion bombardment are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Low-energy N⁺ ion bombardment, which was done using an ion gun at an energy of 200 eV, leads to nitriding of the surface. The process changes the surface stoichiometry and, consequently, provides formation of a disordered altered GaN layer. The calculated electron affinity of the clean n-GaN surface of 3.4 eV and band bending of 0.2 eV became changed after bombardment to 2.9 eV and 0.8 eV, respectively. The obtained difference in valence band maximum between the clean sample and the bombarded one was 0.6 eV.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 351-353
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    AFM/STM Modification of Thin Sb Films on 6H-SiC(0001)
    Autorzy:
    Mazur, P.
    Zuber, S.
    Grodzicki, M.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195467.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    Atomic force microscopy and scanning tunneling microscopy have been used for nanometer scale modifications of Sb films deposited on 6H-SiC(0001) surface. The films are grown in situ by vapor deposition under ultrahigh vacuum. The growth follows the Volmer-Weber mode. Ultrathin (up to 3 nm on average) Sb films which consist of no coalesced islands can be modified by moving the island over the substrate surface by the AFM tip. Thicker films, which are firmer due to the coalescence, can be modified by the field and/or current produced by STM tip. Final result of the modifications is adsorbate free 6H-SiC(0001) surface restitution over the modified area.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1131-1133
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defects in Detwinned LaGaO$\text{}_{3}$ Substrates
    Autorzy:
    Mazur, K.
    Fink-Finowicki, J.
    Berkowski, M.
    Schell, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964373.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Mm
    68.35.Bs
    Opis:
    Single crystals of lanthanum gallate would be the suitable substrate for YBaCuO films except for the phase transition and the tendency to twinning existing in this material. However, by appropriate choice of growth conditions in the Czochralski method, it is possible to grow single crystal of LaGaO$\text{}_{3}$ with low density of twin boundaries. Special stress and temperature treatment can then be applied to such materials to remove majority of existing twins. The substrates were examined by X-ray topography before and after detwinning and the surface was scanned with a profilometer.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 205-208
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Quality (100) and (001) Oriented Substrates Prepared from Czochralski Grown SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ Single Crystals
    Autorzy:
    Berkowski, M.
    Fink-Finowicki, J.
    Sass, J.
    Mazur, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964370.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Fq
    61.50.Ks
    68.35.Bs
    Opis:
    The growth of SrLaGaO$\text{}_{4}$ and SrLaAlO$\text{}_{4}$ crystals on ⟨100⟩ and ⟨001⟩ oriented seeds was investigated. Various defects, which appeared in crystals grown on these two orientations, were observed in polarized light and by X-ray diffraction topography. It was found that to obtain a substrate of the best quality, the crystal should be cut along the growth directions. Therefore, crystals pulled along ⟨100⟩ direction are utilized for preparation of (001) substrates, whereas (100) substrates are better to cut from crystals grown on ⟨001⟩ seed. The quality of the prepared substrates was determined by high resolution X-ray diffraction study in terms of rocking curve and mean mosaic angle.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 201-204
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Sb Layers on p-GaN: UPS, XPS and LEED Study
    Autorzy:
    Grodzicki, M.
    Mazur, P.
    Pers, J.
    Zuber, S.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376064.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Dz
    68.37.Ps
    68.37.Ef
    68.37.-d
    81.10.Bk
    81.07.-b
    Opis:
    The electronic structure of p-type GaN(0001) surfaces and its modification by antimony adsorption, and properties of Sb/GaN(0001) interface, are presented in this report. The studies were carried out in situ by ultraviolet photoelectron spectroscopy, X-ray photoelectron spectroscopy, and low-energy electron diffraction. Thin Sb layers were deposited under ultrahigh vacuum conditions onto the substrate at room temperature. Electron affinity of clean p-GaN surface amounted to 3.0 eV. A small amount of Sb on GaN(0001) surface reduced the electron affinity to 1.9 eV. The work function of the Sb layer was equal to 4.4 eV. For the Schottky barrier height of the Sb/GaN interface, the value of 2.50 eV was obtained.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1128-1130
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Electronic Properties of Structures Containing Films of Alq₃ and LiBr Deposited on Si(111) Crystal
    Autorzy:
    Sito, J.
    Grodzicki, M.
    Lament, K.
    Wasielewski, R.
    Mazur, P.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033793.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Pr
    73.40.Ty
    79.60.-i
    Opis:
    The electronic structures of Alq₃/Si(111) and Alq₃/LiBr/Si(111) interfaces are presented in this report. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ and LiBr layers were vapour deposited onto a single crystal of n-type Si(111). The energy level diagrams were prepared for the structures. The formation of the LiBr interfacial layer results in a decrease of the energy barrier at the interface.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 357-360
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ru/GaN(0001) Interface Properties
    Autorzy:
    Wasielewski, R.
    Grodzicki, M.
    Sito, J.
    Lament, K.
    Mazur, P.
    Ciszewski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033790.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.47.Fg
    73.30.+y
    82.80.Pv
    Opis:
    We report the results of our studies of ruthenium layer structures adsorbed on GaN(0001). Ruthenium was evaporated at room temperature under ultrahigh vacuum conditions onto n-type GaN substrates epitaxially grown on sapphire. While X-ray photoelectron spectroscopy confirmed the presence of Ru bonds in the deposited adlayers, the ultraviolet photoelectron spectroscopy show a peak at the Fermi level as well as lines originating from ruthenium. The height of the Schottky barrier was calculated based on the data measured by X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy and amounts to 1.5 eV.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 354-357
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Stress Monitoring in Steel Elements via Detection of AC Magnetic Permeability Changes
    Autorzy:
    Szumiata, T.
    Hibner, K.
    Dziewiecki, K.
    Mazur, Z.
    Gockiewicz, A.
    Gzik-Szumiata, M.
    Górka, B.
    Witoś, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1030407.pdf
    Data publikacji:
    2018-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.80.+q
    75.60.Ej
    75.50.Bb
    75.30.Gw
    62.20.D-
    Opis:
    The influence of mechanical stress on low frequency AC magnetic permeability was studied. The cold-drawn bars with C45 steel were subjected to investigation. The tensile stress (within elastic regime) was applied by means of material testing machine. Simple measuring system was assembled, which consisted of: function generator with magnetizing coil, detection coil and precise AC voltmeter. The registered changes of induced voltage were proportional to the change of magnetic permeability of the stretched rods. The obtained results were almost frequency-independent due to low frequency limit (250-500 Hz, weak eddy currents, no spin-origin energy dissipation). A significant magneto-mechanical hysteresis was observed slightly evolving from cycle to cycle with tendency of stabilization. The extension of basic Stoner-Wohlfarth model of magnetic permeability allowed to fit the data reproducing hysteretic behavior and considering the relaxation of the internal stress. The proposed, low-cost method is suitable in the industrial applications for stress control in large-sized steel elements.
    Źródło:
    Acta Physica Polonica A; 2018, 133, 3; 719-721
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-13 z 13

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