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    Wyświetlanie 1-5 z 5
    Tytuł:
    On the Management of Direct and Reflected Sounds in the 5.0 Surround Sound Reproduction System
    Autorzy:
    Kleczkowski, P.
    Król, A.
    Małecki, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402174.pdf
    Data publikacji:
    2015-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    43.38.Md
    43.60.-c
    43.55.Lb
    43.66.Lj
    Opis:
    Direct and ambient sounds are usually reproduced through the same loudspeakers. In multichannel systems, with the use of anechoic recordings and auralization techniques it is possible to separate these sound components so that they are reproduced via different loudspeakers. Four basic options of management of direct and reflected sounds were investigated in a perceptual experiment. One sound source and the standard 5.0 surround sound system was used. It was found that listeners consistently preferred sound reproduction with direct sound radiated from only one loudspeaker.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 1A; A-11-A-16
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Hydroquinone Synthesis of Silver Nanoparticles from Silver Bromide Suspensions
    Autorzy:
    Król-Gracz, A.
    Nowak, P.
    Michalak, E.
    Dyonizy, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491287.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-Bc
    61.46.Hk
    Opis:
    The results of research into the preparation of silver nanoparticles using photoreduction in the presence of hydroquinone as the reductant were discussed. Substrates for the synthesis of silver nanoparticles were ultrafine crystalline gelatine-stabilised aqueous suspensions of silver bromide. The influence of the reductant to substrate molar ratio and the medium's pH to the efficient production of silver nanoparticles were studied. The properties of resultant silver particles were examined using UV-Vis spectroscopy. Transmission electron microscopy was used for the photomicrography of silver nanoparticles suspensions.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 196-199
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis of Silver Halide Nanosols
    Autorzy:
    Michalak, E.
    Nowak, P.
    Król-Gracz, A.
    Dyonizy, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1491302.pdf
    Data publikacji:
    2012-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.-b
    Opis:
    The aim of this work was to establish the average size of silver halide nanosols. The method applied was based on the optical turbidance measurements in real time of crystallization process. Dilute turbid suspensions of silver bromide, chloride and iodide stabilized by excess of halide ions and gelatin were measured over wavelength range from 450 nm to 600 nm. Experimental results were compared with the scattering theory of Rayleigh. Relation between dosing rate of reactants to dispersion system and size of obtained silver halide crystals was investigated. Interest in crystalline gelatine-stabilised aqueous suspensions of silver halide is due to their application as a substrate for the synthesis of silver nanoparticles.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 1; 200-202
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Phosphorus Incorporation into $SiO_2$/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
    Autorzy:
    Król, K.
    Konarski, P.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376053.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.16.Pr
    77.84.Bw
    77.55.Dj
    Opis:
    This paper describes the influence of phosphorus incorporation into $SiO_2$/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of $POCl_3$ annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at $E_{V}$ + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1100-1103
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Autorzy:
    Konarski, P.
    Król, K.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Turek, M.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402214.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    68.55.Ln
    82.80.Ms
    85.40.Ry
    Opis:
    Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 864-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-5 z 5

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