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Wyszukujesz frazę "Kowalski, I.M." wg kryterium: Autor


Wyświetlanie 1-13 z 13
Tytuł:
SiO$\text{}_{2}$ Layer Charge State Variation in Fowler-Nordheim Tunneling Regime
Autorzy:
Strzałkowski, I.
Kowalski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1967939.pdf
Data publikacji:
1997-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Qv
Opis:
The charge build-up and its changes in the amorphous SiO$\text{}_{2}$ layer incorporated into a Si MOSFET as a gate oxide due to Fowler-Nordheim tunneling electron injection were investigated. Electron and hole trapping/detrapping by native and generated trap centres were studied by monitoring the charge state of the SiO$\text{}_{2}$ traps by means of a drain-source current versus gate-source voltage technique. New interesting effects were observed and their possible mechanisms are presented.
Źródło:
Acta Physica Polonica A; 1997, 92, 3; 585-590
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electric Field Stimulated Emission of Electrons from Deep Traps in SiO$\text{}_{2}$
Autorzy:
Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Powiązania:
https://bibliotekanauki.pl/articles/1929724.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Qv
73.60.Hy
Opis:
An electric field induced electron tunneling emission from deep traps and an energy distribution of trap levels in VLSI grade SiO$\text{}_{2}$ layers have been studied using a new isochronal - EFSE - technique. A broad spectrum with a density of trap states peak at about 1.9 eV was observed for the first time. The experiment proved the importance of an electron trap-to-band tunneling emission in SiO$\text{}_{2}$.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 701-704
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On Trap Generation in SiO$\text{}_{2}$ Films of Si MOSFETS by Hot Electrons
Autorzy:
Strzałkowski, I.
Marczewski, M.
Kowalski, M.
Jastrzębski, C.
Bąkowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1921597.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.20.Jv
73.40.Qv
73.60.Hy
Opis:
Trap generation in amorphous SiO$\text{}_{2}$ films with thickness about 500 Å was studied by nonavalanche injection of hot electrons. The trap density, the electron capture cross-section of native and generated traps and the effective trap generation constant for the oxide fields of 1-4 MV/cm, injected charge density up to 3 × 10$\text{}^{19}$ e/cm$\text{}^{-2}$ and injected current density in the range 2-300 μA/cm$\text{}^{2}$ were determined and discussed.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 685-688
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Observation of Magnetic Anisotropy in GaN:Cr Single Crystals
Autorzy:
Gosk, J.
Boćkowski, M.
Kowalski, G.
Grzegory, I.
Szczytko, J.
Twardowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1403624.pdf
Data publikacji:
2012-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
75.30.Gw
75.50.Pp
75.10.Dg
Opis:
Magnetic properties of bulk wurtzite GaN:Cr single crystals were studied with the magnetic field applied parallel and perpendicular to the crystal wurtzite c-axis. Structure of the crystal was examined by the X-ray diffraction method. Strong anisotropy of magnetization at low temperatures (2-10 K) was observed. The experimental data suggest Cr to be in nonspherical $d^4$ configuration.
Źródło:
Acta Physica Polonica A; 2012, 122, 6; 1007-1009
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
MnAs Overlayer on GaN(000$\text{}_{1}$)-(1 x 1) - Its Growth, Morphology and Electronic Structure
Autorzy:
Kowalski, B. J.
Kowalik, I. A.
Iwanowski, R. J.
Łusakowska, E.
Sawicki, M.
Sadowski, J.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2038151.pdf
Data publikacji:
2004-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.-a
73.20.At
Opis:
MnAs layer has been grown by means of MBE on the GaN(000$\text{}_{1}$)-(1 x 1) surface. Spontaneous formation of MnAs grains with a diameter of 30-60 nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7 ML. Ferromagnetic properties of the layer with Curie temperature higher than 330 K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8 ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.
Źródło:
Acta Physica Polonica A; 2004, 105, 6; 645-650
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
ZnCoO Films by Atomic Layer Deposition - Influence of a Growth Temperature οn Uniformity of Cobalt Distribution
Autorzy:
Łukasiewicz, M.
Witkowski, B.
Godlewski, M.
Guziewicz, E.
Sawicki, M.
Paszkowicz, W.
Łusakowska, E.
Jakieła, R.
Krajewski, T.
Kowalik, I.
Kowalski, B.
Powiązania:
https://bibliotekanauki.pl/articles/1791350.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.55.Ln
68.55.Nq
78.66.Hf
81.15.Kk
Opis:
We report on the structural, electrical and magnetic properties of ZnCoO thin films grown by atomic layer deposition method using reactive organic precursors of zinc and cobalt. As a zinc precursor we applied either dimethylzinc or diethylzinc and cobalt(II) acetyloacetonate as a cobalt precursor. The use of these precursors allowed us the significant reduction of a growth temperature to 300°C and below, which proved to be very important for the growth of uniform films of ZnCoO. Structural, electrical and magnetic properties of the obtained ZnCoO layers will be discussed based on the results of secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive spectroscopy, X-ray diffraction, atomic force microscopy, Hall effect and SQUID investigations.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 921-923
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cathodoluminescence Profiling for Checking Uniformity of ZnO and ZnCoO Thin Films
Autorzy:
Witkowski, B. S.
Łukasiewicz, M. I.
Wolska, E. A.
Kopalko, K.
Kowalski, B. J.
Guziewicz, E.
Godlewski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2048105.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.15.Gh
78.30.Fs
78.60.Hk
Opis:
We employ scanning electron microscopy and cathodoluminescence for evaluation of uniformity of ZnCoO films obtained by the atomic layer deposition. Cathodoluminescence quenching by Co ions allows us to detect (regions of weaker light emission) Co accumulations, with the resolution limited by diffusion length of secondary carriers.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 675-677
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cross Sections for l-Mixing of K(n$\text{}^{2}$F) States in Collisions with Ground-State K(4$\text{}^{2}$S) Atoms
Autorzy:
Głódź, M.
Huzandrov, A.
Klavins, J.
Sydoryk, I.
Szonert, J.
Gateva-Kostova, S.
Kowalski, K.
Powiązania:
https://bibliotekanauki.pl/articles/2014246.pdf
Data publikacji:
2000-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
34.50.Fa
Opis:
We report measurements of the cross sections σ$\text{}_{l-mix}$ for angular momentum mixing of the K(n$\text{}^{2}$F)(n=6, 7, 8) states with the K(n,l > 3) states, induced in thermal collisions with parent ground state K(4$\text{}^{2}$S) atoms. The experiment was performed in a cell heated to ca. 450K. The n$\text{}^{2}$F states were excited in two steps: 4$\text{}^{2}$S → 4$\text{}^{2}$P → n$\text{}^{2F}$ by using a diode laser for the first step (a dipole-transition) and a pulsed dye laser for the second step (a quadrupole-transition). The measured values σ$\text{}_{l-mix}$ (6$\text{}^{2}$F)=3.6+-2.2, σ$\text{}_{l-mix}$ (7$\text{}^{2}$F)=4.2+-2.6 and σ$\text{}_{l-mix}$ (8$\text{}^{2}$F)=8.0+-4.6 (in units of 10$\text{}^{-13}$cm$\text{}^{-1}$) are close to the corresponding values of the geometrical cross sections.
Źródło:
Acta Physica Polonica A; 2000, 98, 4; 353-361
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Photoemission Study of Mn 3d Electrons in the Valence Band of Mn/GeMnTe
Autorzy:
Pietrzyk, M. A.
Kowalski, B. J.
Orłowski, B. A.
Knoff, W.
Osinniy, V.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/2047678.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Mq
Opis:
We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 275-281
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
Autorzy:
Orlowski, B. A.
Kowalski, B. J.
Dziawa, P.
Pietrzyk, M.
Mickievicius, S.
Osinniy, V.
Taliashvili, B.
Kowalik, I. A.
Story, T.
Johnson, R. L.
Powiązania:
https://bibliotekanauki.pl/articles/2044511.pdf
Data publikacji:
2005-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
79.60.-i
71.20.Mq
Opis:
Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
Źródło:
Acta Physica Polonica A; 2005, 108, 5; 803-807
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO
Autorzy:
Gas, K.
Janik, E.
Zaleszczyk, W.
Pasternak, I.
Dynowska, E.
Fronc, K.
Kolkovsky, V.
Kret, S.
Morhange, J. F.
Reszka, A.
Wiater, M.
Caliebe, W.
Karczewski, G.
Kowalski, B. J.
Szuszkiewicz, W.
Wojtowicz, T.
Powiązania:
https://bibliotekanauki.pl/articles/2047950.pdf
Data publikacji:
2011-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.37.Hk
68.37.Lp
68.65.La
81.07.Vb
Opis:
We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal oxidation of ZnTe NWs. The influence of the parameters characterizing the oxidation process on selected properties of core/shell NWs were examined. Scanning electron microscopy revealed changes of the NWs morphology for various conditions of the oxidation process. X-ray diffraction, high resolution transmission electron microscopy, and Raman scattering measurements were applied to reveal the presence of ZnTe single crystal core and polycrystalline ZnO-shell of investigated structure.
Źródło:
Acta Physica Polonica A; 2011, 119, 5; 612-614
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Hit Time and Hit Position Reconstruction in the J-PET Detector Based on a Library of Averaged Model Signals
Autorzy:
Moskal, P.
Sharma, N.
Silarski, M.
Bednarski, T.
Białas, P.
Bułka, J.
Czerwiński, E.
Gajos, A.
Kamińska, D.
Kapłon, L.
Kochanowski, A.
Korcyl, G.
Kowal, J.
Kowalski, P.
Kozik, T.
Krzemień, W.
Kubicz, E.
Niedźwiecki, Sz.
Pałka, M.
Raczyński, L.
Rudy, Z.
Rundel, O.
Salabura, P.
Słomski, A.
Smyrski, J.
Strzelecki, A.
Wieczorek, A.
Wiślicki, W.
Wochlik, I.
Zieliński, M.
Zoń, N.
Powiązania:
https://bibliotekanauki.pl/articles/1402622.pdf
Data publikacji:
2015-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
87.57.uk
07.05.Kf
Opis:
In this article we present a novel method of hit time and hit position reconstruction in long scintillator detectors. We take advantage of the fact that for this kind of detectors amplitude and shape of registered signals depend strongly on the position where particle hits the detector. The reconstruction is based on determination of the degree of similarity between measured and averaged signals stored in a library for a set of well-defined positions along the scintillator. Preliminary results of validation of the introduced method with experimental data obtained by means of the double strip prototype of the J-PET detector are presented.
Źródło:
Acta Physica Polonica A; 2015, 127, 5; 1495-1499
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Multiple Scattering and Accidental Coincidences in the J-PET Detector Simulated Using GATE Package
Autorzy:
Kowalski, P.
Moskal, P.
Wiślicki, W.
Raczyński, L.
Bednarski, T.
Białas, P.
Bułka, J.
Czerwiński, E.
Gajos, A.
Gruntowski, A.
Kamińska, D.
Kapłon, Ł.
Kochanowski, A.
Korcyl, G.
Kowal, J.
Kozik, T.
Krzemień, W.
Kubicz, E.
Niedźwiecki, Sz.
Pałka, M.
Rudy, Z.
Salabura, P.
Sharma, N.
Silarski, M.
Słomski, A.
Smyrski, J.
Strzelecki, A.
Wieczorek, A.
Wochlik, I.
Zieliński, M.
Zoń, N.
Powiązania:
https://bibliotekanauki.pl/articles/1402625.pdf
Data publikacji:
2015-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
29.40.Mc
87.57.uk
87.10.Rt
34.50.-s
Opis:
Novel positron emission tomography system, based on plastic scintillators, is developed by the J-PET collaboration. In order to optimize geometrical configuration of built device, advanced computer simulations are performed. Detailed study is presented of background given by accidental coincidences and multiple scattering of gamma quanta.
Źródło:
Acta Physica Polonica A; 2015, 127, 5; 1505-1512
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-13 z 13

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