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Wyszukujesz frazę "Konarski, J.M." wg kryterium: Autor

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    Wyświetlanie 1-4 z 4
    Tytuł:
    Expansion of the Rotational Energy of Diatomic Molecules into a Continued Fraction
    Autorzy:
    Molski, M.
    Konarski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1920626.pdf
    Data publikacji:
    1992-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    33.10.Cs
    33.10.Jz
    Opis:
    A new expansion of the rotational energy of diatomic molecules, in the form of a continued fraction has been investigated. The considered formula is applied in calculation of molecular constants and reproduction of rotational spectra of rigid-, semirigid- and van der Waals-type molecules. A physical interpretation of semiempirical expansion parameters is proposed and a connection between the method considered and the Dunham approach is also discussed.
    Źródło:
    Acta Physica Polonica A; 1992, 81, 4-5; 495-501
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modified Kratzer-Fues Formula for Rotation-Vibration Energy of Diatomic Molecules
    Autorzy:
    Molski, M.
    Konarski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1924270.pdf
    Data publikacji:
    1992-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    33.10.Cs
    33.10.Jz
    Opis:
    An extension of the Kratzer-Fues approach to analytical calculation of the rotation-vibration energy of diatomic molecules is proposed. The eigen-values from this approach are applied in calculation of the rotational and rovibrational energies and in evaluation of molecular constants of selected diatomic molecules, resulting in satisfactory reproduction of experimental frequencies over a wide range of rotational states. In contrast to our previous proposition the rotational dependence of vibration energy is taken into account. An additional set of fitted parameters which include equilibrium distance and dissociation constant was also employed.
    Źródło:
    Acta Physica Polonica A; 1992, 82, 6; 927-936
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profile Analysis of Phosphorus Implanted SiC Structures
    Autorzy:
    Konarski, P.
    Król, K.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Turek, M.
    Żuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402214.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.49.Sf
    68.55.Ln
    82.80.Ms
    85.40.Ry
    Opis:
    Secondary ion mass spectrometry depth profile analyses were performed on two sets of 4H-SiC(0001) substrate samples implanted with phosphorus. Both sets were processed under the same conditions. We implanted the samples with 100 keV (10¹¹-10¹⁴ cm¯²) phosphorus ions through the thin chemical vapor deposition deposited silicon dioxide stopping mask in order to obtain an ultra-shallow implantation profile. After phosphorus implantation, secondary ion mass spectrometry depth profile analysis was performed on the first set of samples and the second set was subjected to thermal oxidation procedure at 1200°C in order to create a dielectric layer. The aim of the oxidation process was formation of the silicon dioxide layer enriched with phosphorus: the element, which is considered to be suitable for trap density reduction. Ion implantation parameters as well as oxidation and chemical etching procedures were examined for the proper incorporation of phosphorus into the subsurface structure of the silicon oxide. Secondary ion mass spectrometry depth profile analysis was performed with Physical Electronics 06-350E sputter ion gun and QMA-410 Balzers quadrupole mass analyser. The analytical parameters such as: 1.7 keV Ar⁺ ion beam digitally scanned over 3×3 mm² area and ion erosion rate of 1.4 nm/min and sampling rate of 0.3 nm, were suitable for samples oxidized after ion implantation.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 864-866
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The Effect of Phosphorus Incorporation into $SiO_2$/4H-SiC (0001) Interface on Electrophysical Properties of MOS Structure
    Autorzy:
    Król, K.
    Konarski, P.
    Miśnik, M.
    Sochacki, M.
    Szmidt, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376053.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.16.Pr
    77.84.Bw
    77.55.Dj
    Opis:
    This paper describes the influence of phosphorus incorporation into $SiO_2$/4H-SiC system. The main scope is an analysis of the slow responding trap states (near interface traps) since the influence of phosphorus technology on fast traps has already been investigated by numerous research groups. Two different phosphorus incorporation methods were incorporated - the diffusion-based process of $POCl_3$ annealing and ion implantation. We have shown that regardless of method used a new distinct near interface trap center can be found located approximately at $E_{V}$ + 3.0 eV. This trap can be related to the incorporated phosphorus amount as shown through secondary ion mass spectroscopy measurements.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1100-1103
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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